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BFP 450 E6327

射频(RF)双极晶体管 TRANS GP BJT NPN 4.5V 0.1A

器件类别:半导体    分立半导体    晶体管    RF晶体管    射频(RF)双极晶体管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

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器件参数
参数名称
属性值
厂商名称
Infineon(英飞凌)
产品种类
射频(RF)双极晶体管
晶体管类型
Bipolar
技术
Si
晶体管极性
NPN
直流集电极/Base Gain hfe Min
60
集电极—发射极最大电压 VCEO
4.5 V
发射极 - 基极电压 VEBO
1.5 V
集电极连续电流
100 mA
最小工作温度
- 65 C
最大工作温度
+ 150 C
配置
Single
安装风格
SMD/SMT
封装 / 箱体
SOT-343
封装
Cut Tape
封装
Reel
集电极—基极电压 VCBO
15 V
直流电流增益 hFE 最大值
60 at 50 mA at 4 V, 50 at 90 mA at 3 V
高度
0.9 mm
长度
2 mm
工作频率
24000 MHz
类型
RF Bipolar Small Signal
宽度
1.25 mm
增益带宽产品fT
24000 MHz
最大直流电集电极电流
0.17 A
Pd-功率耗散
450 mW
工厂包装数量
3000
文档预览
BFP450
Linear Low Noise Silicon Bipolar RF Transistor
Datasheet
Revision 1.2, 2013-07-29
RF & Protection Devices
Edition 2013-07-29
Published by
Infineon Technologies AG
81726 Munich, Germany
©
2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP450
BFP450, Linear Low Noise Silicon Bipolar RF Transistor
Revision History: 2013-07-29, Revision 1.2
Page
Subjects (changes since previous revision)
This datasheet replaces the revision from 2012-09-11.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet have been expanded
and updated.
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Datasheet
3
Revision 1.2, 2013-07-29
BFP450
Table of Contents
Table of Contents
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
2
3
4
5
5.1
5.2
5.3
5.4
5.5
6
7
Product Brief
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Features
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
11
11
12
16
19
Simulation Data
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Package Information SOT343
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Datasheet
4
Revision 1.2, 2013-07-29
BFP450
List of Figures
List of Figures
Figure 4-1
Figure 5-1
Figure 5-2
Figure 5-3
Figure 5-4
Figure 5-5
Figure 5-6
Figure 5-7
Figure 5-8
Figure 5-9
Figure 5-10
Figure 5-11
Figure 5-12
Figure 5-13
Figure 5-14
Figure 5-15
Figure 5-16
Figure 5-17
Figure 5-18
Figure 5-19
Figure 7-1
Figure 7-2
Figure 7-3
Figure 7-4
Total Power Dissipation
P
tot
=
f
(
T
s
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BFP450 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Collector Emitter Voltage
I
C
=
f
(
V
CE
),
I
B
= Parameter in mA . . . . . . . . . . . .
DC Current Gain
h
FE
=
f
(
I
C
),
V
CE
= 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Base Emitter Voltage
I
C
=
f
(
V
BE
),
V
CE
= 2 V. . . . . . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Forward Voltage
I
B
=
f
(
V
BE
),
V
CE
= 2 V . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Reverse Voltage
I
B
=
f
(
V
EB
),
V
CE
= 2 V . . . . . . . . . . . . . . . . . . . .
Transition Frequency
f
T
=
f
(
I
C
),
f
= 1 GHz,
V
CE
= Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . .
3rd Order Intercept Point
OIP3
=
f
(
I
C
),
Z
S
=
Z
L
= 50
Ω,
V
CE
,
f
= Parameters . . . . . . . . . . . . . . . . .
Collector Base Capacitance
C
CB
=
f
(
V
CB
),
f
= 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain
G
ma
,
G
ms
, I
S
21
I² =
f
(
f
),
V
CE
= 3 V,
I
C
= 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain
G
max
=
f
(
I
C
),
V
CE
= 3 V, = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain
G
max
=
f
(
V
CE
),
I
C
= 90 mA, = Parameter in GHz . . . . . . . . . . . . . . . . . . . .
Input Matching
S
11
=
f
(
f
),
V
CE
= 3 V,
I
C
= 50 / 90 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Source Impedance for Minimum Noise Figure =
f
(
f
),
V
CE
= 3 V,
I
C
= 50 / 90 mA . . . . . . . . . . . . .
Output Matching
S
22
=
f
(
f
),
V
CE
= 3 V,
I
C
= 50 / 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure
NF
min
=
f
(
f
),
V
CE
= 3 V,
I
C
= 50 / 90 mA,
Z
S
=
Z
opt
. . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure
NF
min
=
f
(
I
C
),
V
CE
= 3 V,
Z
S
=
Z
opt
= Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure
NF
50
=
f
(
I
C
),
V
CE
= 3 V,
Z
S
= 50
Ω=
Parameter in GHz . . . . . . . . . . . . . . . . . . . . . .
Comparison Noise Figure
NF
50
/
NF
min
=
f
(
I
C
),
V
CE
= 3 V,
f
= 1.9 GHz . . . . . . . . . . . . . . . . . . . . .
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Description (Marking BFP450: ANs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
12
16
16
17
17
18
19
19
20
20
21
21
22
22
23
23
24
24
25
27
27
27
27
Datasheet
5
Revision 1.2, 2013-07-29
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参数对比
与BFP 450 E6327相近的元器件有:BFP 450 E6433。描述及对比如下:
型号 BFP 450 E6327 BFP 450 E6433
描述 射频(RF)双极晶体管 TRANS GP BJT NPN 4.5V 0.1A 射频(RF)双极晶体管 NPN Silicon RF Transistor
厂商名称 Infineon(英飞凌) Infineon(英飞凌)
产品种类 射频(RF)双极晶体管 射频(RF)双极晶体管
晶体管类型 Bipolar Bipolar
技术 Si Si
晶体管极性 NPN NPN
集电极—发射极最大电压 VCEO 4.5 V 4.5 V
发射极 - 基极电压 VEBO 1.5 V 1.5 V
集电极连续电流 100 mA 0.1 A
最小工作温度 - 65 C - 65 C
最大工作温度 + 150 C + 150 C
配置 Single Single
安装风格 SMD/SMT SMD/SMT
封装 / 箱体 SOT-343 SOT-343
集电极—基极电压 VCBO 15 V 15 V
直流电流增益 hFE 最大值 60 at 50 mA at 4 V, 50 at 90 mA at 3 V 60
高度 0.9 mm 0.9 mm
长度 2 mm 2 mm
工作频率 24000 MHz 24000 MHz
类型 RF Bipolar Small Signal RF Bipolar Small Signal
宽度 1.25 mm 1.25 mm
增益带宽产品fT 24000 MHz 24000 MHz
最大直流电集电极电流 0.17 A 0.17 A
Pd-功率耗散 450 mW 450 mW
工厂包装数量 3000 10000
封装 Reel Reel
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