DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ161
NPN video transistor
Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
Philips Semiconductors
Product specification
NPN video transistor
FEATURES
•
Low output capacitance
•
High gain bandwidth
•
High current applicability
•
Good thermal stability
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
•
Pre-stage driver in high resolution
colour graphics monitors.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
Fig.1
DESCRIPTION
NPN video transistor in a SOT54
(TO-92) plastic package.
page
BFQ161
1
2
3
MSB033
Simplified outline
(SOT54; TO-92).
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin, 4 mm from the body.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
Notes
1. T
s
is the temperature at the soldering point of the collector pin, 4 mm from the body.
2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm
2
.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
T
s
≤
75
°C;
notes 1 and 2; see Fig.3
open emitter
open base
R
BE
= 100
Ω
open collector
CONDITIONS
−
−
−
−
−
−
−65
−
MIN.
MAX.
20
10
19
3
500
1
+150
150
V
V
V
V
mA
W
°C
°C
UNIT
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
junction temperature
T
s
≤
75
°C;
note 1
I
C
= 300 mA; V
CE
= 5 V
I
C
= 300 mA; V
CE
= 5 V; T
amb
= 25
°C
open emitter
R
BE
= 100
Ω
CONDITIONS
−
−
−
−
25
1
−
MIN.
MAX.
20
19
500
1
−
−
150
GHz
°C
V
V
mA
W
UNIT
1997 Oct 02
2
Philips Semiconductors
Product specification
NPN video transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
R
th j-a
R
th s-a
Note
1. T
s
is the temperature at the soldering point of the collector pin, 4 mm from the body.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
PARAMETER
collector-base breakdown voltage
emitter-base breakdown voltage
collector-emitter cut-off current
DC current gain
CONDITIONS
I
C
= 5 mA; I
E
= 0
I
E
= 0.1 mA; I
C
= 0
I
B
= 0; V
CE
= 10 V
I
C
= 300 mA; V
CE
= 5 V;
T
amb
= 25
°C;
see Fig.4
I
C
= 100 mA; V
CE
= 5 V;
T
amb
= 25
°C;
see Fig.4
C
cb
C
c
f
T
collector-base capacitance
collector capacitance
transition frequency
I
C
= 0; V
CB
= 5 V; f = 1 MHz;
see Fig.5
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
MIN.
20
10
3
−
25
40
−
−
TYP.
−
−
−
−
−
50
4.3
6
−
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
thermal resistance from soldering point to ambient
CONDITIONS
note 1
VALUE
75
175
100
BFQ161
UNIT
K/W
K/W
K/W
MAX.
−
−
−
100
−
−
−
−
−
UNIT
V
V
V
µA
collector-emitter breakdown voltage I
C
= 10 mA; I
B
= 0
pF
pF
GHz
I
C
= 300 mA; V
CE
= 5 V; see Fig.6 1
1997 Oct 02
3
Philips Semiconductors
Product specification
NPN video transistor
BFQ161
600
handbook, halfpage
IC
(mA)
500
MEA204
MEA206 - 1
1.2
handbook, halfpage
Ptot
(W)
1.0
0.8
400
0.6
0.4
300
0.2
200
0
0
4
8
VCEO (V)
12
0
50
100
150
Ts (
o
C)
200
Fig.2 DC SOAR.
Fig.3 Power derating curve.
MEA207
MEA205
handbook,
70
halfpage
7.5
handbook, halfpage
Ccb
(pF)
6.5
hFE
65
60
5.5
55
4.5
50
0
200
400
IC (mA)
600
3.5
0
5
10
15
VCB (V)
20
V
CE
= 5 V; T
amb
= 25
°C.
f = 1 MHz; T
amb
= 25
°C.
Fig.4
DC current gain as a function of
collector current; typical values.
Fig.5
Collector-base capacitance as a function of
collector-base voltage; typical values.
1997 Oct 02
4
Philips Semiconductors
Product specification
NPN video transistor
BFQ161
4
handbook, halfpage
fT
(GHz)
3
MEA203
2
1
0
0
100
200
IC (mA)
300
V
CE
= 5 V; T
amb
= 25
°C.
Fig.6
Transition frequency as a function of
collector current; typical values.
1997 Oct 02
5
