DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BFQ251
PNP video transistor
Product specification
Supersedes data of 1997 Oct 02
1998 Oct 06
Philips Semiconductors
Product specification
PNP video transistor
FEATURES
•
High breakdown voltages
•
Low output capacitance
•
High gain bandwidth
•
Good thermal stability
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
•
Buffer/driver in high-resolution
colour graphics monitors.
DESCRIPTION
PNP video transistor in a SOT54
(TO-92) plastic package.
NPN complement: BFQ231.
PINNING
BFQ251
page
1
2
3
MSB033
PIN
1
2
3
base
DESCRIPTION
collector
emitter
Fig.1
Simplified outline
(SOT54; TO-92).
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
Note
1. T
s
is the temperature at the soldering point of the collector pin, 4 mm from the body.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
Notes
1. T
s
is the temperature at the soldering point of the collector pin, 4 mm from the body.
2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm
2
.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
65
°C;
notes 1 and 2; see Fig.3
open emitter
open base
R
BE
= 100
Ω
open collector
CONDITIONS
−
−
−
−
−
−
−65
−
MIN.
MAX.
−100
−65
−95
−3
−300
1
+150
150
V
V
V
V
mA
W
°C
°C
UNIT
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
T
s
≤
65
°C;
note 1
I
C
=
−50
mA; V
CE
=
−10
V
open emitter
R
BE
= 100
Ω
CONDITIONS
−
−
−
−
20
MIN.
−
−
−
−
30
1.3
TYP.
MAX.
−100
−95
−300
1
−
−
GHz
UNIT
V
V
mA
W
I
C
=
−50
mA; V
CE
=
−10
V; T
amb
= 25
°C
1
1998 Oct 06
2
Philips Semiconductors
Product specification
PNP video transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
R
th j-a
Note
1. T
s
is the temperature at the soldering point of the collector pin, 4 mm from the body.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
I
CBO
h
FE
C
cb
f
T
PARAMETER
collector-base breakdown voltage
CONDITIONS
I
C
=
−0.1
mA; I
E
= 0
MIN.
−100
−65
−95
−3
−
−
20
−
1
TYP.
−
−
−
−
−
−
30
2
1.3
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
CONDITIONS
note 1
BFQ251
VALUE
85
185
UNIT
K/W
K/W
MAX. UNIT
−
−
−
−
−100
−20
−
−
−
pF
GHz
V
V
V
V
µA
µA
collector-emitter breakdown voltage I
C
=
−10
mA; I
B
= 0
collector-emitter breakdown voltage I
C
=
−10
mA; R
BE
= 100
Ω
emitter-base breakdown voltage
collector-emitter cut-off current
collector-base cut-off current
DC current gain
collector-base capacitance
transition frequency
I
E
=
−0.1
mA; I
C
= 0
I
B
= 0; V
CE
=
−50
V
I
E
= 0; V
CB
=
−50
V
I
C
=
−50
mA; V
CE
=
−10
V; see Fig.4
I
C
= i
c
= 0; V
CB
=
−10
V; f = 1 MHz;
see Fig.5
I
C
=
−50;
V
CE
=
−10
V; see Fig.6
−400
handbook, halfpage
IC
(mA)
−300
MEA232 - 1
MEA228 - 1
1.2
handbook, halfpage
Ptot
(W)
1.0
0.8
−200
0.6
0.4
−100
0.2
0
0
−20
−40
−60
−80
−100
VCEO (V)
0
0
50
100
150
Ts (
o
C)
200
T
amb
= 25
°C.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1998 Oct 06
3
Philips Semiconductors
Product specification
PNP video transistor
BFQ251
MEA231
MEA229
handbook,
40
halfpage
6
handbook, halfpage
Ccb
(pF)
hFE
30
4
20
2
10
0
0
−100
−200
IC (mA)
−300
0
0
−10
−20
−30
−40
VCB (V)
V
CE
=
−10
V; T
amb
= 25
°C.
f = 1 MHz; T
amb
= 25
°C.
Fig.4
DC current gain as a function of collector
current; typical values.
Fig.5
Collector-base capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
1.5
MBK897
fr
(GHz)
1
0.5
0
0
−50
−100
I (mA)
C
−150
V
CE
=
−10
V; T
amb
= 25
°C.
Fig.6
Transition frequency as a function of
collector current; typical values.
1998 Oct 06
4
Philips Semiconductors
Product specification
PNP video transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
BFQ251
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
EIAJ
SC-43
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.56
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L1
(1)
2.5
1998 Oct 06
5
