BFR193F
Low Noise Silicon Bipolar RF Transistor
•
For low noise, high-gain amplifiers up to 2 GHz
•
For linear broadband amplifiers
•
f
T
= 8 GHz,
NF
min
= 1 dB at 900 MHz
•
Pb-free (RoHS compliant) and halogen-free product
•
Qualification report according to AEC-Q101 available
3
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFR193F
Parameter
Marking
RCs
Pin Configuration
1=B
2=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
Symbol
R
thJS
3=C
Value
Package
TSFP-3
Unit
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
72°C
12
20
20
2
80
10
580
150
-55 ... 150
Value
V
mA
mW
°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
135
K/W
S is measured on the collector lead at the soldering point to the pcb
2
For the definition of
R
thJS please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2013-11-07
BFR193F
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 30 mA,
V
CE
= 8 V, pulse measured
h
FE
70
100
140
-
I
EBO
-
-
1
µA
I
CBO
-
-
100
nA
I
CES
-
-
100
µA
V
(BR)CEO
12
-
-
V
typ.
max.
Unit
2
2013-11-07
BFR193F
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 50 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz, V
BE
= 0
,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz, V
BE
= 0
,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 10 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
Power gain, maximum stable
1)
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
Power gain, maximum available
1)
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Transducer gain
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=Z
L
=50
Ω,
f
= 900 MHz
f
= 1.8 GHz
Third order intercept point at output
2)
V
CE
= 8 V,
I
C
= 30 mA,
f
= 900 MHz,
Z
S
=
Z
L
= 50
Ω
1dB compression point at output
3)
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
1
G
Unit
max.
-
1
-
-
GHz
pF
typ.
8
0.63
0.25
2.25
f
T
C
cb
C
ce
C
eb
6
-
-
-
NF
min
-
-
G
ms
-
1
1.6
12.5
-
-
-
dB
dB
G
ma
-
19
-
dB
|S
21e
|
2
-
-
IP
3
-
14.5
8.5
29
-
-
-
dB
dBm
P
-1dB
-
14.5
-
1/2),
G
ma
= |S
21
/
S
12
| (k-(k²-1)
ms
= |S
21
/
S
12
|
2
IP3
value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
DC current at no input power
3
2013-11-07
BFR193F
Total power dissipation
P
tot
=
ƒ
(T
S
)
700
mW
500
P
tot
400
300
200
100
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
4
2013-11-07
Package TSFP-3
BFR193F
5
2013-11-07
NXP MCU
