DISCRETE SEMICONDUCTORS
DATA SHEET
BFR53
NPN 2 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1997 Oct 28
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
FEATURES
•
Very low intermodulation distortion
•
Very high power gain.
APPLICATIONS
•
Thick and thin-film circuits.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
CM
P
tot
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
feedback capacitance
transition frequency
open emitter
open base
f
>
1 MHz
T
s
≤
85
°C
I
C
= 2 mA; V
CE
= 5 V; f = 1 MHz;
T
amb
= 25
°C
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz;
T
j
= 25
°C
CONDITIONS
−
−
−
−
0.9
2
10.5
TYP.
PINNING
PIN
1
2
3
base
emitter
collector
1
Top view
Marking code:
N1.
BFR53
DESCRIPTION
fpage
3
2
MSB003
Fig.1 SOT23.
MAX.
18
10
100
250
−
−
−
V
V
UNIT
mA
mW
pF
GHz
dB
maximum unilateral power gain I
C
= 30 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
°C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
f
>
1 MHz
T
s
≤
85
°C
(note 1)
open emitter
open base
open collector
CONDITIONS
−
−
−
−
−
−
−65
−
TYP.
MAX.
18
10
2.5
50
100
250
+150
150
V
V
V
mA
mA
mW
°C
°C
UNIT
1997 Oct 28
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 25 mA; V
CE
= 5 V; see Fig.2
I
C
= 50 mA; V
CE
= 5 V; see Fig.2
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz;
see Fig.3
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 2 mA; V
CE
= 5 V; f = 1 MHz;
T
amb
= 25
°C
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz;
see Fig.4
I
C
= 30 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
°C;
see Fig.5
I
C
= 2 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
°C;
see Fig.6
MIN.
−
25
25
−
−
−
−
−
−
TYP.
−
−
−
0.9
1.5
0.9
2
10.5
−
PARAMETER
CONDITIONS
VALUE
260
BFR53
UNIT
K/W
thermal resistance from junction to soldering point T
s
≤
85
°C;
note 1
MAX.
50
−
−
−
−
−
−
−
5
UNIT
nA
pF
pF
pF
GHz
dB
dB
S
21
=
10 log ------------------------------------------------------------- dB .
- ˙
2
2
1
–
S
11
1
–
S
22
2
1997 Oct 28
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
MEA458
handbook, halfpage
100
MEA457
handbook, halfpage
h FE
90
2.0
Cc
(pF)
1.6
80
1.2
70
0.8
60
0.4
50
0
50
I C (mA)
100
0
0
4
8
12
16
V CB (V)
20
V
CE
= 5 V; T
j
= 25
°C.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Collector capacitance as a function of
collector-base voltage; typical values.
MEA459
MEA455
handbook, halfpage
2.2
handbook, halfpage
30
fT
(GHz)
1.8
gain
(dB)
20
1.4
10
G UM
I S 12 I
2
1.0
0
25
I C (mA)
50
0
2
10
10
3
10
4
f (MHz)
V
CE
= 5 V; f = 500 MHz; T
j
= 25
°C.
I
C
= 30 mA; V
CE
= 5 V; T
amb
= 25
°C.
Fig.4
Transition frequency as a function of
collector current; typical values.
Fig.5
Gain as a function of frequency;
typical values.
1997 Oct 28
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
MEA460
handbook, halfpage
10
handbook, halfpage
50
MEA456
F
(dB)
BS
(mS)
3.3
3.5
5.0
4.5
F = 5.5 dB
5
0
4.0
0
0
10
20
30
I C (mA)
40
−50
0
20
40
60
80
100
G S (mS)
V
CE
= 5 V; f = 500 MHz; G
S
= 20 mS; B
S
is tuned; T
amb
= 25
°C.
I
C
= 2 mA; V
CE
= 5 V; f = 500 MHz; T
amb
= 25
°C.
Fig.6
Minimum noise figure as a function of
collector current; typical values.
Fig.7 Circles of constant noise figure; typical values.
1997 Oct 28
5
