BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
1
Features
•
•
•
•
•
Low noise figure
High power gain
e3
Small collector capacitance
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
SOT-23
2
1
3
SOT-23
Applications
Wide band, low noise, small signal amplifiers up to
UHF frquencies, high speed logic applications and
oscillator applications.
3
1
2
SOT-323
Mechanical Data
Typ:
BFS17A
Case:
SOT-23 Plastic case
Weight:
approx. 8.0 mg
Marking:
E2
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Typ:
BFS17AR
Case:
SOT-23 Plastic case
Weight:
approx. 8.0 mg
Marking:
E5
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Typ:
BFS17AW
Case:
SOT-323 Plastic case
Weight:
approx. 6.0 mg
Marking:
WE2
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
2
3
19150
Electrostatic sensitive device.
Observe precautions for handling.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
≤
60 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
25
15
2.5
25
200
150
- 65 to + 150
Unit
V
V
V
mA
mW
°C
°C
Document Number 85039
Rev. 1.5, 29-Apr-05
www.vishay.com
1
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Junction ambient
1)
1)
Test condition
Symbol
R
thJA
Value
450
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
μm
Cu
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Test condition
V
CE
= 25 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 2.5 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 20 mA, I
B
= 2 mA
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
h
FE
20
20
15
0.1
100
0.6
150
Min
Typ.
Max
100
100
10
Unit
μA
nA
μA
V
V
DC forward current transfer ratio V
CE
= 1 V, I
C
= 2 mA
V
CE
= 1 V, I
C
= 25 mA
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Transition frequency
Test condition
V
CE
= 5 V, I
C
= 2 mA,
f = 300 MHz
V
CE
= 5 V, I
C
= 14 mA,
f = 300 MHz
V
CE
= 5 V, I
C
= 30 mA,
f = 300 MHz
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage - two tone
intermodulation test
Third order intercept point
V
CB
= 10 V, f = 1 MHz
V
CE
= 5 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 5 V, I
C
= 2 mA,
Z
S
= 50
Ω,
f = 800 MHz
V
CE
= 10 V, I
C
= 14 mA,
Z
S
= 50
Ω,
f = 800 MHz
V
CE
= 10 V, I
C
= 14 mA,
d
IM
= 60 dB, f
1
= 806 MHz,
f
2
= 810 MHz, Z
S
= Z
L
= 50
Ω
V
CE
= 10 V, I
C
= 14 mA,
f = 800 MHz
Symbol
f
T
f
T
f
T
C
cb
C
ce
C
eb
F
G
pe
V
1
= V
2
3
Min
Typ.
1.5
3.5
3.2
0.6
0.1
1.1
2.5
13
150
Max
Unit
GHz
GHz
GHz
pF
pF
pF
dB
dB
mV
IP
3
23.5
dBm
www.vishay.com
2
Document Number 85039
Rev. 1.5, 29-Apr-05
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
Common Emitter S-Parameters
Z
0
= 50
Ω,
T
amb
= 25 °C, unless otherwise specified
V
CE
/V
I
C
/mA
f/MHz
LIN
MAG
5
2
100
300
500
800
1000
1200
1500
1800
2000
5
5
100
300
500
800
1000
1200
1500
1800
2000
5
10
100
300
500
800
1000
1200
1500
1800
2000
5
15
100
300
500
800
1000
1200
1500
1800
2000
5
20
100
300
500
800
1000
1200
1500
1800
2000
0.829
0.672
0.544
0.457
0.442
0.444
0.463
0.474
0.493
0.658
0.485
0.409
0.370
0.369
0.373
0.397
0.417
0.440
0.480
0.376
0.355
0.336
0.336
0.343
0.370
0.393
0.420
0.390
0.344
0.340
0.332
0.333
0.336
0.367
0.391
0.416
0.342
0.337
0.340
0.333
0.334
0.342
0.371
0.398
0.423
S11
ANG
deg
-29.5
-79.5
-113.6
-145.4
-160.1
-172.5
172.1
159.0
153.0
-45.1
-106.3
-139.6
-166.3
-177.7
173.9
162.7
152.7
148.7
-65.1
-130.2
-158.2
-179.7
171.9
165.2
157.2
149.1
147.0
-81.5
-143.8
-167.0
174.4
167.1
161.9
155.3
147.4
145.8
-95.6
-152.5
-172.8
170.8
164.8
159.2
153.9
147.0
144.8
6.22
4.80
3.54
2.43
2.03
1.77
1.49
1.31
1.22
12.07
7.43
4.93
3.23
2.65
2.28
1.89
1.64
1.52
17.64
8.89
5.66
3.63
2.95
2.53
2.09
1.80
1.66
20.46
9.34
5.87
3.74
3.04
2.60
2.14
1.84
1.70
21.91
9.44
5.85
3.74
3.03
2.59
2.14
1.84
1.69
LIN
MAG
S21
ANG
deg
158.9
126.1
105.6
88.0
79.5
72.2
61.7
52.3
45.0
149.5
113.4
96.8
82.7
75.8
69.3
60.3
51.7
44.4
139.7
105.3
91.6
79.6
73.5
67.7
59.3
50.9
44.0
133.8
101.4
89.3
78.1
72.2
66.7
58.5
50.6
43.6
129.4
99.0
87.8
77.0
71.4
65.9
57.8
49.7
42.8
0.028
0.064
0.078
0.087
0.093
0.101
0.117
0.142
0.168
0.025
0.048
0.061
0.080
0.094
0.110
0.136
0.166
0.193
0.020
0.039
0.055
0.081
0.098
0.117
0.145
0.177
0.204
0.018
0.036
0.054
0.081
0.100
0.119
0.149
0.181
0.207
0.016
0.035
0.053
0.081
0.100
0.120
0.149
0.181
0.207
LIN
MAG
S12
ANG
deg
74.2
53.3
45.2
45.7
49.6
54.0
60.6
65.5
65.6
69.6
55.1
55.7
61.4
64.1
66.3
68.2
68.2
65.2
67.8
62.6
66.2
69.7
70.8
71.2
70.8
69.0
65.1
67.5
66.9
70.8
73.0
73.1
72.8
71.8
69.5
65.3
68.3
70.3
73.6
75.0
74.4
73.9
72.7
70.2
65.8
0.965
0.812
0.707
0.648
0.639
0.634
0.619
0.596
0.559
0.909
0.668
0.572
0.537
0.540
0.540
0.529
0.510
0.479
0.833
0.570
0.499
0.484
0.492
0.497
0.486
0.470
0.445
0.780
0.532
0.476
0.470
0.481
0.485
0.476
0.461
0.437
0.743
0.515
0.469
0.469
0.482
0.485
0.476
0.461
0.438
LIN
MAG
S22
ANG
deg
-8.9
-19.2
-21.7
-22.5
-23.9
-26.6
-31.5
-36.2
-39.7
-14.4
-23.0
-21.6
-19.7
-20.6
-23.3
-28.0
-31.5
-33.4
-19.2
-22.9
-19.4
-16.6
-17.6
-20.5
-25.1
-28.2
-29.1
-21.3
-21.6
-17.3
-14.7
-15.9
-19.2
-23.7
-26.8
-27.5
-21.9
-19.9
-16.0
-13.6
-15.1
-18.4
-23.1
-26.2
-27.0
Document Number 85039
Rev. 1.5, 29-Apr-05
www.vishay.com
3
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
V
CE
/V
I
C
/mA
f/MHz
LIN
MAG
10
2
100
300
500
800
1000
1200
1500
1800
2000
10
5
100
300
500
800
1000
1200
1500
1800
2000
10
10
100
300
500
800
1000
1200
1500
1800
2000
10
15
100
300
500
800
1000
1200
1500
1800
2000
10
20
100
300
500
800
1000
1200
1500
1800
2000
0.827
0.651
0.534
0.457
0.437
0.438
0.441
0.454
0.470
0.658
0.462
0.390
0.355
0.353
0.357
0.372
0.390
0.406
0.492
0.351
0.321
0.310
0.316
0.324
0.344
0.362
0.380
0.411
0.318
0.305
0.302
0.304
0.318
0.336
0.360
0.376
0.365
0.311
0.305
0.305
0.312
0.322
0.344
0.366
0.381
S11
ANG
deg
-29.0
-76.2
-108.9
-140.7
-157.5
-170.6
173.7
160.4
152.5
-43.5
-102.5
-133.9
-161.4
-174.5
175.4
163.3
153.6
146.9
-61.8
-126.2
-153.8
-175.0
174.4
166.7
157.6
149.3
143.7
-76.1
-140.0
-162.9
178.7
170.3
163.9
155.2
147.7
142.5
-88.4
-149.1
-169.0
175.4
167.2
161.4
154.1
146.6
141.8
6.37
4.81
3.58
2.51
2.09
1.81
1.51
1.31
1.22
12.32
7.51
5.05
3.35
2.74
2.34
1.94
1.67
1.54
18.05
9.08
5.81
3.77
3.06
2.60
2.15
1.85
1.70
21.04
9.59
6.01
3.87
3.14
2.67
2.19
1.89
1.73
22.59
9.67
6.00
3.85
3.12
2.65
2.18
1.87
1.72
LIN
MAG
S21
ANG
deg
157.9
126.6
107.7
90.1
81.4
73.8
64.2
56.1
50.8
148.9
114.5
98.6
84.2
77.2
70.8
62.6
55.0
50.3
139.5
106.1
92.9
80.8
74.6
68.9
61.3
54.3
49.6
133.5
102.1
90.2
79.1
73.2
67.8
60.4
53.8
49.0
129.0
99.5
88.5
78.0
72.4
66.9
59.6
52.9
48.3
0.024
0.053
0.065
0.073
0.079
0.086
0.099
0.119
0.136
0.021
0.041
0.052
0.068
0.081
0.094
0.115
0.139
0.157
0.018
0.034
0.047
0.069
0.084
0.100
0.124
0.149
0.167
0.016
0.031
0.046
0.070
0.085
0.102
0.126
0.151
0.169
0.014
0.029
0.045
0.069
0.085
0.102
0.126
0.151
0.170
LIN
MAG
S12
ANG
deg
73.1
53.9
47.2
48.8
52.7
57.8
65.6
71.8
74.9
69.7
55.8
57.2
63.2
66.6
69.3
72.2
74.0
74.5
66.6
62.3
67.0
71.5
73.1
74.0
74.8
75.0
74.3
66.5
67.0
71.4
74.7
75.5
75.8
75.9
75.6
75.0
65.8
69.8
73.6
76.2
76.9
76.8
76.6
76.2
75.5
0.965
0.835
0.759
0.712
0.701
0.695
0.688
0.685
0.681
0.913
0.711
0.645
0.618
0.613
0.613
0.610
0.607
0.604
0.846
0.628
0.584
0.573
0.575
0.575
0.575
0.572
0.571
0.799
0.596
0.565
0.563
0.565
0.569
0.568
0.567
0.564
0.765
0.586
0.564
0.564
0.570
0.571
0.571
0.570
0.568
LIN
MAG
S22
ANG
deg
-7.7
-15.4
-17.6
-19.4
-21.1
-23.4
-27.4
-32.3
-35.5
-12.5
-18.3
-17.4
-17.8
-19.3
-21.5
-25.5
-30.1
-33.4
-16.3
-17.5
-15.3
-15.4
-17.0
-19.5
-23.5
-28.1
-31.3
-17.7
-15.9
-13.5
-14.1
-15.8
-18.2
-22.5
-27.0
-30.4
-18.1
-14.4
-12.3
-13.3
-15.1
-17.8
-22.1
-26.9
-30.1
www.vishay.com
4
Document Number 85039
Rev. 1.5, 29-Apr-05
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
300
250
200
150
100
50
0
0
96 12159
P
tot
-Total
Power Dissipation ( mW )
5
F – Noise Figure ( dB )
4
3
2
1
0
V
CE
= 5 V
f = 800 MHz
Z
S
= 50
Ω
0
5
10
15
20
25
30
20
40
60
80
100 120 140 160
13607
T
amb
- Ambient Temperature (
°C
)
I
C
– Collector Current ( mA )
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Noise Figure vs. Collector Current
f
T
– Transition Frequency ( MHz )
4000
3500
3000
2500
2000
1500
1000
500
0
0
5
V
CE
= 5 V
f = 300 MHz
10
15
20
25
I
C
– Collector Current ( mA )
30
13605
Figure 2. Transition Frequency vs. Collector Current
C
cb
– Collector Base Capacitance ( pF )
1.0
0.8
0.6
0.4
0.2
f = 1 MHz
0.0
0
4
8
12
16
20
V
CB
– Collector Base Voltage ( V )
13606
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
Document Number 85039
Rev. 1.5, 29-Apr-05
www.vishay.com
5
