DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17
NPN 1 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
•
A wide range of RF applications such as:
– Mixers and oscillators in TV tuners
– RF communications equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
Marking code:
E1p.
1
Top view
2
MSB003
BFS17
handbook, halfpage
3
Fig.1 SOT23.
QUICK REFERENCED DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
f
T
F
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
noise figure
up to T
s
= 70
°C;
note 1
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz; T
j
= 25
°C
I
C
= 2 mA; V
CE
= 5 V; R
S
= 50
Ω;
f = 500 MHz;
T
j
= 25
°C
open emitter
open base
CONDITIONS
−
−
−
−
1
4.5
TYP.
MAX.
25
15
25
300
−
−
UNIT
V
V
mA
mW
GHz
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 70
°C;
note 1
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−65
−
MIN.
MAX.
25
15
2.5
25
50
300
+150
150
UNIT
V
V
V
mA
mA
mW
°C
°C
Note to the Quick reference data and the Limiting values
1. T
s
is the temperature at the soldering point of the collector pin.
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
F
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
noise figure
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 2 mA; V
CE
= 1 V
I
C
= 25 mA; V
CE
= 1 V
I
C
= 2 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 5 V; f = 1 MHz
I
C
= 2 mA; V
CE
= 5 V; R
S
= 50
Ω;
f = 500 MHz
MIN.
−
25
25
−
−
−
−
−
−
TYP.
−
90
90
1
1.6
0.8
−
0.65
4.5
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
up to T
s
= 70
°C;
note 1
VALUE
260
BFS17
UNIT
K/W
MAX.
10
−
−
−
−
1.5
2
−
−
UNIT
nA
GHz
GHz
pF
pF
pF
dB
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17
handbook, halfpage
100
MEA395
handbook, halfpage
2.0
MEA396
Cc
(pF)
hFE
1.6
1.2
50
0.8
0.4
0
0
10
20
IC (mA)
30
0
0
10
20
VCB (V)
30
V
CE
= 1 V; T
j
= 25
°C.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.2
DC current gain as a function of
collector current.
Fig.3
Collector capacitance as a function of
collector-base voltage.
handbook, halfpage
2
MEA393
handbook, halfpage
10
MEA397
fT
(GHz)
F
(dB)
1
5
0
0
10
20
IC (mA)
30
0
0
4
8
12
16
20
IC (mA)
V
CE
= 5 V; f = 500 MHz; T
j
= 25
°C.
V
CE
= 5 V; R
S
= 50
Ω;
f = 500 MHz; T
j
= 25
°C.
Fig.4
Transition frequency as a function of
collector current.
Fig.5
Minimum noise figure as a function of
collector current.
September 1995
4
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BFS17
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
September 1995
5
