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BFT33AR1

Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

器件类别：分立半导体    晶体管   

厂商名称：TT Electronics plc

厂商官网：http://www.ttelectronics.com/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
TT Electronics plc
包装说明
TO-39, 3 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
3 A
集电极-发射极最大电压
80 V
配置
SINGLE
最小直流电流增益 (hFE)
15
JEDEC-95代码
TO-39
JESD-30 代码
O-MBCY-W3
JESD-609代码
e1
元件数量
1
端子数量
3
封装主体材料
METAL
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子面层
TIN SILVER COPPER
端子形式
WIRE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
50 MHz
文档预览
BFT33A
MECHANICAL DATA
Dimensions in mm(inches)
8.89 (0.35)
9.40 (0.37)
NPN SILICON TRANSISTOR
7.75 (0.305)
8.51 (0.335)
FEATURES
6.10 (0.240)
6.60 (0.260)
• FAST SWITCHING
• HIGH PULSE POWER
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
12.70
(0.500)
min.
5.08 (0.200)
typ.
APPLICATIONS
2.54
(0.100)
• POWER SWITCHING CIRCUITS
• MOTOR CONTROL
2
1
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
3
45°
TO39
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
Ptot
T
amb
Tstg,
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Power Dissipation at Tcase
≤
25°C
Ambient Operating Temperature
Storage Temperature
100V
80V
5V
3A
2A
1W
-55°C to +200°C
-55°C to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3081
Issue 1
BFT33A
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
Static Value of Common
h21E
Test Conditions
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 5V
f = 20MHz
V
CB
= 80V
V
EB
= 4V
V
CE
= 5V
I
C
= 150mA
I
C
= 1A
I
C
= 150mA
I
C
= 1A
V
CB
= 10V
f = 1MHz
I
C
= 10mA
I
B
= 15mA
I
B
= 0.1A
I
B
= 15mA
I
B
= 0.1A
I
E
= 0
I
E
= 0
t = 150°C
I
C
= 0.15
I
C
= 2A
I
C
= 1mA
I
C
= 100mA
Min.
50
15
20
50
Typ.
Max. Unit
250
—
Emitter Forward Current
Transfer Ratio
f
T
I
CBO
I
EBO
h
21e
V
CE(sat)*
V
BE(sat)*
C
22b
Transistion Frequency
Collector Base
Cut- Off Current.
Emitter–Base Cut-off Current
Small Signal Common Emitter
Collector – Emitter
Saturation Voltage*
Base – Emitter
Saturation Voltage*
Common – Base
Output Capacitance
MHz
100
100
100
nA
µA
nA
—
0.3
0.6
0.95
1.3
80
V
V
pF
Forward Current Transfer Ratio f = 1KHz
25
*Pulse Conditions: Pulse Length = 300
µs
duty cycle = 1.5%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3081
Issue 1
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参数对比
与BFT33AR1相近的元器件有：。描述及对比如下：
型号 BFT33AR1
描述 Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
是否Rohs认证 符合
厂商名称 TT Electronics plc
包装说明 TO-39, 3 PIN
Reach Compliance Code compliant
ECCN代码 EAR99
最大集电极电流 (IC) 3 A
集电极-发射极最大电压 80 V
配置 SINGLE
最小直流电流增益 (hFE) 15
JEDEC-95代码 TO-39
JESD-30 代码 O-MBCY-W3
JESD-609代码 e1
元件数量 1
端子数量 3
封装主体材料 METAL
封装形状 ROUND
封装形式 CYLINDRICAL
峰值回流温度（摄氏度） NOT SPECIFIED
极性/信道类型 NPN
认证状态 Not Qualified
表面贴装 NO
端子面层 TIN SILVER COPPER
端子形式 WIRE
端子位置 BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED
晶体管应用 SWITCHING
晶体管元件材料 SILICON
标称过渡频率 (fT) 50 MHz
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