BFY193C
HiRel
NPN Silicon RF Transistor
4
HiRel
Discrete and Microwave Semiconductor
For low noise, high-gain amplifiers up to 2GHz.
For linear broadband amplifiers
Specified 1/f Noise
Hermetically sealed microwave package
f
T
= 8 GHz
F = 2.3 dB at 2 GHz
Space Qualified
ESA/SCC Detail Spec. No.: 5611/006
Type Variant No. 08
3
1
2
ESD: Electrostatic discharge
sensitive device,
observe handling precautions!
Type
Marking
Ordering Code
Pin Configuration
1
2
E
3
B
4
E
Package
BFY193C (ql)
-
see below
C
Micro-X1
(ql) Quality Level:
P: Professional Quality
H: High Rel Quality
S: Space Quality
ES: ESA Space Quality
(see order instructions for ordering example)
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V1, August 2011
BFY193C
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, V
BE
=0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
S
104°C
2), 3)
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-soldering point
3)
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
op
T
stg
Values
12
20
20
2
80
10
1)
580
200
-65...+200
-65...+200
Unit
V
V
V
V
mA
mA
mW
C
C
C
R
th JS
< 165
K/W
Notes.:
1) The maximum permissible base current for V
FBE
measurements is 30mA (spot-
measurement duration < 1s)
2) At T
S
= + 104 °C. For T
S
> + 104 °C derating is required.
3) T
S
is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at T
A
=25°C; unless otherwise specified
Parameter
Symbol
min.
DC Characteristics
Collector-base cutoff current
V
CB
= 20 V, I
E
= 0
Collector-emitter cutoff current
V
CE
= 12 V, I
B
= 0,5µA
V
CB
= 10 V, I
E
= 0
Emitter base cuttoff current
V
EB
= 2 V, I
C
= 0
Emitter base cuttoff current
V
EB
= 1 V, I
C
= 0
Notes:
1.) This Test assures V(BR)
CE0
> 12V
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V1, August 2011
1.)
Values
typ.
max.
Unit
I
CBO
I
CEX
-
-
100
µA
-
-
600
µA
Collector-base cutoff current
I
CBO
I
EBO
I
EBO
-
-
50
nA
A
A
-
-
25
-
-
0.5
BFY193C
Electrical Characteristics
(continued)
Parameter
Symbol
min.
DC Characteristics
Base-Emitter forward voltage
I
E
= 30 mA, I
C
= 0
DC current gain
I
C
= 30 mA, V
CE
= 8 V
AC Characteristics
Transition frequency
I
C
= 40mA, V
CE
= 5 V, f = 500 MHz
I
C
= 50 mA, V
CE
= 8 V, f = 500 MHz
Collector-base capacitance
V
CB
= 10 V, V
BE
= vbe = 0, f = 1 MHz
Collector-emitter capacitance
V
CE
= 10 V, V
BE
= vbe = 0, f = 1 MHz
Emitter-base capacitance
V
EB
= 0.5V, V
CB
= vcb = 0, f = 1 MHz
Noise Figure
I
C
= 15 mA, V
CE
= 5 V, f = 2 GHz,
Z
S
= Z
Sopt
Power gain
I
C
= 40 mA, V
CE
= 5V, f = 2 GHz
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
Transducer gain
I
C
= 40 mA, V
CE
= 5 V, f = 2 GHz
Z
S
= Z
L
= 50
Output Power
I
C
= 50 mA, V
CE
= 5 V, f = 2GHz,
P
IN
=10dBm, Z
S
= Z
L
= 50
1/f Noise
Notes.:
1.)
F
10Hz
-
-
300
nV/√Hz
P
OUT
16.5
17.5
-
dBm
|S
21e
|
2
Values
typ.
max.
Unit
V
FBE
h
FE
-
-
1
V
50
100
175
-
f
T
6,5
-
C
CB
C
CE
C
EB
F
-
7.5
8
0.56
-
-
0.75
GHz
pF
-
0.34
-
pF
-
1.9
2.4
pF
-
2.3
2.9
dB
Gma
1.)
12.5
13.5
-
dB
8
9
-
dB
G
ma
½
S
21
(
k
k
2
1)
,
S
12
G
ms
½
S
21
S
12
IFAG IMM RPD D HIR
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V1, August 2011
BFY193C
Micro-X1 Package
4
Edition 2011-08
3
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
1
2
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
IFAG IMM RPD D HIR
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V1, August 2011
