BLF245C
RF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The
ASI BLF245C
is a VDMOS
transistor designed for large signal
amplifier applications in the VHF
frequency range.
PACKAGE STYLE .400 8L FLG
C
D
B
A
F U LL R
FEATURES INCLUDE:
•
P
G
= 16 dB Typical at 175 MHz
•
30:1
Load VSWR Capability
•
Omnigold™
metalization system
G
F
E
.1925
.125
K
H
O
4 x .060 R
I
J
N
L M
MAXIMUM RATINGS
I
D
V
DS
V
GS
P
DISS
T
J
T
STG
θ
JC
6.0 A
65 V
±20
V
68 W @ T
C
= 25 °C
-65 °C to +150 °C
-65 °C to +200 °C
1.8 °C/W
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
M IN IM U M
inches / m m
M A X IM U M
inches / m m
.030 / 0.76
.115 / 2.92
.360 / 9.14
.065 / 1.65
.130 / 3.30
.380 / 9.65
.735 / 18.67
.645 / 16.38
.895 / 22.73
.420 / 10.67
.003 / 0.08
.120 / 3.05
.159 / 4.04
.395 / 10.03
.390 / 9.91
.765 / 19.43
.655 / 16.64
.905 / 22.99
.430 / 10.92
.007 / 0.18
.130 / 3.30
.175 / 4.45
.280 / 7.11
.405 / 10.29
.075 / 1.91
.125 / 3.18
COMMON SOURCE
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
C
iss
C
oss
C
rss
P
G
η
D
ψ
I
D
= 10 mA
V
DS
= 28 V
V
DS
= 0 V
V
DS
= 10 V
V
DS
= 10 V
V
DS
= 28 V
V
DS
= 28 V
NONE
T
C
= 25 °C
TEST CONDITIONS
V
GS
= 0 V
V
GS
=
±20
V
I
D
= 10 mA
I
D
= 1.5 A
V
GS
= 0 V
I
DQ
= 25 mA
f = 1.0 MHz
P
out
= 30 W
f = 150 MHz
MINIMUM
65
TYPICAL MAXIMUM
2.0
1.0
UNITS
V
mA
µA
V
S
pF
dB
%
2.0
1.2
1.9
125
75
7.0
13
50
16
60
4.5
V
SWR
= 30:1
AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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