BLF4G20LS-110B
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1:
Typical performance
f = 1930 MHz to 1990 MHz; T
case
= 25
°
C; I
Dq
= 650 mA; unless otherwise specified; in a class-AB
production test circuit; typical values
Mode of operation
CW
GSM EDGE
[1]
[2]
V
DS
(V)
28
28
P
L
(W)
100
48 (AV)
G
p
(dB)
13.4
13.8
η
D
(%)
49
38.5
ACPR
400
(dBc)
-
−61
[1]
ACPR
600
(dBc)
-
−74
[2]
EVM
rms
(%)
-
2.1
ACPR
400
at 30 kHz resolution bandwidth.
ACPR
600
at 30 kHz resolution bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s
Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an I
Dq
of 650 mA:
x
Load power = 48 W (AV)
x
Gain = 13.8 dB (typ)
x
Efficiency = 38.5 % (typ)
x
ACPR
400
=
−61
dBc (typ)
x
ACPR
600
=
−74
dBc (typ)
x
EVM
rms
= 2.1 % (typ)
s
Easy power control
s
Excellent ruggedness
s
High efficiency
s
Excellent thermal stability
s
Designed for broadband operation (1800 MHz to 2000 MHz)
s
Internally matched for ease of use
Philips Semiconductors
BLF4G20LS-110B
UHF power LDMOS transistor
1.3 Applications
s
RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 1800 MHz to 2000 MHz frequency range.
2. Pinning information
Table 2:
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Symbol
1
2
3
sym039
[1]
Connected to flange
3. Ordering information
Table 3:
Ordering information
Package
Name
BLF4G20LS-110B
-
Description
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+15
12
+150
200
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5:
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
T
case
= 80
°C
P
L
= 40 W
P
L
= 100 W
-
-
0.62
0.52
0.71
0.61
K/W
K/W
Min
Typ
Max
Unit
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
2 of 12
Philips Semiconductors
BLF4G20LS-110B
UHF power LDMOS transistor
6. Characteristics
Table 6:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 180 mA
V
DS
= 28 V; I
D
= 900 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 6 V;
V
DS
= 10 V
V
GS
=
±15
V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10 A
Min
65
2.5
2.7
-
27
-
-
-
-
Typ
-
3.1
3.2
-
30
-
9.0
90
2.5
Max Unit
-
3.5
3.7
3
-
300
-
-
-
V
V
V
µA
A
nA
S
mΩ
pF
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 0.9 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 6 V;
I
D
= 6 A
feedback capacitance
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
7. Application information
Table 7:
Application information
Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 650 mA; T
case
= 25
°
C; unless otherwise specified; in a class-AB production test circuit.
Symbol
G
p
IRL
η
D
Parameter
power gain
input return loss
drain efficiency
Conditions
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
Min
13
-
36
-
-
-
-
Typ
13.8
−10
38.5
−61
−74
2.1
7.0
Max Unit
-
-
−58
−71
3.3
10
dB
%
dBc
dBc
%
%
−6.5
dB
ACPR
400
adjacent channel power ratio (400 kHz)
ACPR
600
adjacent channel power ratio (600 kHz)
EVM
rms
EVM
M
rms EDGE signal distortion error
peak EDGE signal distortion error
7.1 Ruggedness in class-AB operation
The BLF4G20LS-110B is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 650 mA; P
L
= 110 W (CW); f = 1990 MHz.
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
3 of 12
Philips Semiconductors
BLF4G20LS-110B
UHF power LDMOS transistor
15
G
p
(dB)
13
η
D
G
p
001aac387
60
η
D
(%)
40
15
G
p
(dB)
14
G
p
001aac388
50
η
D
(%)
40
13
η
D
30
12
11
20
11
20
10
9
0
40
80
120
P
L
(W)
0
160
10
0
20
40
60
0
80
100
P
L(AV)
(W)
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°C;
f = 1990 MHz
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°C;
f = 1990 MHz
Fig 1. One-tone CW power gain and drain efficiency
as functions of load power; typical values
Fig 2. Two-tone CW power gain and drain efficiency
as functions of average load power; typical
values
0
IMD3
(dBc)
001aac390
0
IMD
(dBc)
−20
001aac389
IMD3
-20
−40
IMD5
IMD7
-40
1
2
3
4
−60
-60
−80
0
20
40
60
80
100
P
L(AV)
(W)
-80
0
20
40
60
80
100
P
L(AV)
(W)
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°C;
f = 1990 MHz
V
DS
= 28 V; T
case
= 25
°C;
f = 1990 MHz
(1) I
Dq
= 550 mA
(2) I
Dq
= 650 mA
(3) I
Dq
= 750 mA
(4) I
Dq
= 850 mA
Fig 3. Intermodulation distortion as a function of
average load power; typical values
Fig 4. Third order intermodulation distortion as a
function of average load power; typical values
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
4 of 12
Philips Semiconductors
BLF4G20LS-110B
UHF power LDMOS transistor
15
G
p
(dB)
14
G
p
001aac391
50
η
D
(%)
40
−50
ACPR
(dBc)
−60
001aac392
13
η
D
12
30
−70
20
−80
ACPR
400
ACPR
600
11
10
10
0
20
40
60
80
P
L(AV)
(W)
0
−90
0
20
40
60
80
P
L(AV)
(W)
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°C;
f = 1990 MHz
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°C;
f = 1990 MHz
Fig 5. GSM EDGE power gain and drain efficiency as
functions of average load power; typical values
001aac393
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
a function of average load power; typical values
−56
ACPR
(dBc)
−60
3
001aac394
12
EVM
(%)
8
4
EVM
(%)
EVM
M
−64
ACPR
400
4
−68
EVM
rms
EVM
rms
0
0
20
40
60
80
P
L(AV)
(W)
−72
0
10
20
30
40
η
D
(%)
50
2
1
0
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°C;
f = 1990 MHz
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°C;
f = 1990 MHz
Fig 7. GSM EDGE rms EVM and peak EVM as
functions of average load power; typical values
Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as
functions of drain efficiency; typical values
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
5 of 12
