N-Channel Enhancement-Mode
MOS Transistor
CORPORATION
2N7000 / BS170L
DESCRIPTION
The 2N7000 utilizes Calogic’s vertical DMOS technology. The
device is well suited for switching applications where B
V
of
60V and low on resistance (under 5 ohms) are required. The
2N7000 is housed in a plastic TO-92 package.
ORDERING INFORMATION
Part
2N7000
BS170L
X2N7000
Package
Plastic TO-92
Plastic TO-92
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
PIN CONFIGURATION
2N7000
3
1 SOURCE
2 GATE
3 DRAIN
2
1
2
BOTTOM VIEW
1
3
TO-92
(TO-226AA)
BS170L
3
1 DRAIN
2 GATE
3 SOURCE
2
1
2
BOTTOM VIEW
3
1
3
1
2
CD5
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
60
r
DS(ON)
(Ω)
5
5
I
D
(A)
0.2
0.5
P/N
2N7000
BS170
2N7000 / BS170L
CORPORATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
T
stg
T
L
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
1
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
LIMITS
60
±40
0.2
0.13
0.5
0.4
0.16
-55 to 150
-55 to 150
300
o
UNITS
V
TEST CONDITIONS
T
A
= 25
o
C
A
T
A
= 100
o
C
T
A
= 25
o
C
T
A
= 100
o
C
W
C
THERMAL RESISTANCE RATINGS
SYMBOL
R
thJA
NOTE:
THERMAL RESISTANCE
Junction-to-Ambient
LIMITS
312.5
UNITS
K/W
1. Pulse width limited by maximum junction temperature.
SPECIFICATIONS
1
SYMBOL
STATIC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
r
DS(ON)
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
3
Drain-Source On-Resistance
3
PARAMETER
MIN
60
0.8
TYP
2
70
1.9
MAX
UNIT
TEST CONDITIONS
I
D
= 10µA, V
GS
= 0V
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±15V,
V
DS
= 0V
V
DS
= 48V, V
GS
= 0V
T
C
= 125
o
C
V
DS
= 10V, V
GS
= 4.5V
4
3
±10
1
1000
V
nA
µA
mA
75
210
4.8
2.5
4.4
0.36
5.3
5
9
0.4
2.5
4.5
V
GS
= 4.5V, I
D
= 75mA
T
C
= 125
o
C
Ω
V
GS
= 10V, I
D
= 0.5A
4
V
GS
= 4.5V, I
D
= 75mA
T
C
= 125
o
C
4
V
DS(ON)
g
FS
g
OS
DYNAMIC
C
iss
C
oss
C
rss
SWITCHING
t
ON
t
OFF
NOTES: 1.
2.
3.
4.
Drain-Source On-Voltage
3
1.25
2.2
100
3, 4
V
mS
µS
V
GS
= 10V, I
D
= 0.5A
V
DS
= 10V, I
D
= 0.2A
V
DS
= 5V, I
D
= 50mA
Forward Transconductance
3
Common Source Output Conductance
Input Capacitance
Output Capacitance
4
Reverse Transfer Capacitance
170
500
16
11
2
60
25
5
pF
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Turn-On Time
Turn-Off Time
T
A
= 25
o
C unless otherwise specified.
For design aid only, not subject to production testing.
Pulse test; PW =
≤300µS,
duty cycle
≤3%.
This parameter not registered with JEDEC.
7
7
10
nS
10
V
DD
= 15V, R
L
= 25Ω, I
D
= 0.5A
V
GEN
= 10V, R
G
= 25Ω
(Switching time is essentially
independent of operating temperature)
