MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS
TM
5Power-Transistor,80V
BSC061N08NS5
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
OptiMOS
TM
5Power-Transistor,80V
BSC061N08NS5
1Description
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
8
7
SuperSO8
5
6
5
6
7
8
1
2
3
4
4
3
2
1
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
oss
Q
G
(0V..10V)
Value
80
6.1
82
33
27
Unit
V
mΩ
A
nC
nC
S1
S2
S3
G4
8D
7D
6D
5D
Type/OrderingCode
BSC061N08NS5
Package
PG-TDSON-8
Marking
061N08NS
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2014-12-27
OptiMOS
TM
5Power-Transistor,80V
BSC061N08NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.2.0,2014-12-27
OptiMOS
TM
5Power-Transistor,80V
BSC061N08NS5
2Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-20
-
-
-55
Typ.
-
-
-
-
-
-
-
-
-
Max.
82
52
19
328
50
20
74
2.5
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=10V,T
C
=25°C,R
thJA
=50K/W
1)
T
C
=25°C
I
D
=50A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
thJA
=50K/W
1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Continuous drain current
Pulsed drain current
2)
Avalanche energy, single pulse
3)
Gate source voltage
Power dissipation
Operating and storage temperature
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
mJ
V
W
°C
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm
2
cooling area
1)
Symbol
R
thJC
R
thJC
R
thJA
Values
Min.
-
-
-
Typ.
1.0
-
-
Max.
1.7
20
50
Unit
K/W
K/W
K/W
Note/TestCondition
-
-
-
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
1)
Final Data Sheet
4
Rev.2.0,2014-12-27
OptiMOS
TM
5Power-Transistor,80V
BSC061N08NS5
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
1)
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
80
2.2
-
-
-
-
-
-
32
Typ.
-
3.0
0.1
10
10
5.2
7.4
1.0
65
Max.
-
3.8
1
100
100
6.1
9.0
1.5
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=41µA
V
DS
=80V,V
GS
=0V,T
j
=25°C
V
DS
=80V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=41A
V
GS
=6V,I
D
=20.5A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=41A
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
1900
310
16
11
6
19
5
Max.
2500
400
28
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=40V,f=1MHz
V
GS
=0V,V
DS
=40V,f=1MHz
V
GS
=0V,V
DS
=40V,f=1MHz
V
DD
=40V,V
GS
=10V,I
D
=41A,
R
G,ext
=3Ω
V
DD
=40V,V
GS
=10V,I
D
=41A,
R
G,ext
=3Ω
V
DD
=40V,V
GS
=10V,I
D
=41A,
R
G,ext
=3Ω
V
DD
=40V,V
GS
=10V,I
D
=41A,
R
G,ext
=3Ω
1)
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.0,2014-12-27
