型号
- 型号
- 关键词
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
厂商名称：Philips Semiconductors (NXP Semiconductors N.V.)
厂商官网：https://www.nxp.com/
下载文档| 型号 | BSD213 | BSD214 | BSD215 | BSD212 |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Philips Semiconductors (NXP Semiconductors N.V.) | Philips Semiconductors (NXP Semiconductors N.V.) | Philips Semiconductors (NXP Semiconductors N.V.) | Philips Semiconductors (NXP Semiconductors N.V.) |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 配置 | Single | Single | Single | Single |
| 最大漏极电流 (Abs) (ID) | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 0.275 W | 0.275 W | 0.275 W | 0.275 W |
| 表面贴装 | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |