n-Channel Power MOSFET
OptiMOS™
BSF077N06NT3 G
Data Sheet
1.2, 2011-03-01
Preliminary
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
1
Description
OptiMOS™60V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 60V
the best choice for the demanding requirements of switched mode power supplies
in Servers, Datacom and Telecom applications but also for motor drives. With
almost no parasitic package inductances, the CanPAK allows best controllability
of the gate in highly dynamic switching enviroments. This package in addition
features best cooling capability through top-side cooling of the metal can. Hence,
this packaging technology combined with the OptiMOS silicon enables highest
efficiency levels while having mininal space requirements at the same time
Features
•
•
•
•
•
•
•
•
•
•
•
Optimized technology for DC/DC converters
100% avalanche tested
Excellent gate charge x R
DS(on)
product (FOM)
Qualified according to JEDEC
1)
for target applications
Superior thermal resistance
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Double.sided cooling
Compatible with DirectFET® package ST footprint and outline
2)
Low profile (<0.7mm)
Low parasitic inductance
Applications
•
•
•
•
DC/DC converters
Synchronous rectification
Power distribution
Motor drive applications
Key Performance Parameters
Value
60
7.7
56
28
34
Unit
V
mΩ
A
nC
Related Links
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
Table 1
Parameter
V
DS
R
DS(on),max
I
D
Q
OSS
Q
g
.
typ
Type
BSF077N06NT3 G
Package
MG-WDSON-2
Marking
0206
1) J-STD20 and JESD22
2) DirectFET ® is a trademark of International Rectifier Corporation. BSF077N06NT3 G uses DirectFET ® technology
licensed from International Rectifier Corporation.
Preliminary Data Sheet
1
1.2, 2011-03-01
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
2
Maximum ratings
at
T
j
= 25 °C, unless otherwise specified.
Table 2
Parameter
Continuous drain current
Maximum ratings
Symbol
Min.
I
D
-
-
Values
Typ.
Max.
56
36
13
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
-
-
-20
-
-40
55
-
-
-
-
-
150
224
150
20
38
2.2
150
56
°C
Ncm
mJ
V
W
T
C
=25 °C
T
A
=25 °C,
R
thJA
=58 K/W
3)
A
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=58 K/W
1)
)
T
C
=25 °C
I
D
=30 A,R
GS
=25
Ω
Unit
Note / Test Condition
1) DirectFET ® is a trademark of International Rectifier Corporation. BSF077N06NT3 G uses DirectFET ® technology
licensed from International Rectifier Corporation.
2) See figure 3 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical in still air.
3
Table 3
Parameter
Thermal characteristics
Thermal characteristics
Symbol
Min.
-
-
Values
Typ.
1.0
3.3
-
Max.
-
-
58
°K/W
Unit
Note /
Test Condition
bottom
top
6 cm
2
cooling area
1)
Thermal resistance, junction - case
R
thJC
Device on PCB
R
thJA
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical in still air
Preliminary Data Sheet
2
1.2, 2011-03-01
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at
T
j=25 °C, unless otherwise specified.
Table 4
Parameter
Static characteristics
Symbol
Min.
Drain-source breakdown voltage
V
(BR)DSS
Gate threshold voltage
Zero gate voltage drain current
60
2
-
-
Gate-source leakage current
Gate resistance
Transconductance
Values
Typ.
15
3
0.1
10
10
6.6
0.5
46
Max.
-
4
10
100
100
7.7
-
nA
mΩ
Ω
S
|V
DS
|>2|I
D|RDS(on)max
,
I
D
=30 A
µA
V
Unit
Note / Test Condition
V
GS
=0 V,
I
D
=1 mA
V
DS
=
V
GS
,
I
D
=33 µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=60 V,
V
GS
=0 V,
T
j
=125 °C
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=30A
V
GS(th)
I
DSS
I
GSS
R
G
g
fs
-
-
-
23
Drain-source on-state resistance
R
DS(on)
Table 5
Parameter
Dynamic characteristics
Symbol
Min.
Values
Typ.
2800
800
22
12
4
18
3
Max.
3700
1060
-
-
-
-
-
ns
pF
-
-
-
-
-
-
-
Unit
Note /
Test Condition
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
V
GS
=0 V,
V
DS
=30V,
f
=1 MHz
V
DD
=30V,
V
GS
=10 V,
I
D
=30 A,
R
G
= 1.6
Ω
t
d(on)
t
r
t
d(off)
t
f
Preliminary Data Sheet
3
1.2, 2011-03-01
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Electrical characteristics
Table 6
Parameter
Gate charge characteristics
1)
Symbol
Min.
Values
Typ.
15
3
15
34
5.2
28
Max.
-
-
-
46
-
37
V
nC
-
-
-
-
-
Unit
Note /
Test Condition
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q
gs
Q
gd
Q
sw
V
DD
=30 V,
I
D
=30 A,
V
GS
=0 to 10 V
Q
g
V
plateau
Q
oss
V
DD
=30 V,
V
GS
=0 V
1) See figure 16 for gate charge parameter definition
Table 7
Parameter
Reverse diode characteristics
Symbol
Min.
I
s
I
S,pulse
Values
Typ.
Max.
30
120
-
-
-
0.9
56
41
1.2
-
-
V
nC
ns
A
Unit
Note /
Test Condition
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
Reverse recovery time
T
C
=25 °C
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
R
=30V,
I
F
=I
s
,
d
i
F
/d
t
=400 A/µs
V
SD
Q
rr
t
rr
Preliminary Data Sheet
4
1.2, 2011-03-01
