TRANSISTOR 750 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
厂商名称:NXP(恩智浦)
厂商官网:https://www.nxp.com
器件标准:
下载文档型号 | BSH205T/R | BSH205 | BSH205/T3 |
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描述 | TRANSISTOR 750 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | TRANSISTOR 750 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SOT-23, 3 PIN, FET General Purpose Small Signal | TRANSISTOR 750 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal |
厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
其他特性 | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 12 V | 12 V | 12 V |
最大漏极电流 (ID) | 0.75 A | 0.75 A | 0.75 A |
最大漏源导通电阻 | 0.5 Ω | 0.5 Ω | 0.5 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
是否Rohs认证 | 符合 | 符合 | - |
JESD-609代码 | e3 | e3 | - |
湿度敏感等级 | 1 | 1 | - |
峰值回流温度(摄氏度) | 260 | 260 | - |
端子面层 | TIN | Tin (Sn) | - |
处于峰值回流温度下的最长时间 | 40 | 30 | - |
包装说明 | - | PLASTIC, SOT-23, 3 PIN | SMALL OUTLINE, R-PDSO-G3 |