DISCRETE SEMICONDUCTORS
DATA SHEET
BSN10; BSN10A
N-channel enhancement mode
vertical D-MOS transistors
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
FEATURES
•
Direct interface to C-MOS, TTL,
etc.
•
High-speed switching
•
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a TO-92
envelope, intended for use in general
purpose fast switching applications.
PINNING - TO-92
ndbook, halfpage
BSN10; BSN10A
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
R
DS(on)
V
GS(th)
PARAMETER
drain-source voltage
DC drain current
drain-source on-resistance
gate-source threshold voltage
MAX.
50
175
15
1.8
V
mA
Ω
V
UNIT
handbook, 2 columns
d
1
PIN
1
2
3
1
2
3
gate
drain
DESCRIPTION
BSN10
2
3
g
MSB033
MBB076 - 1
s
source
BSN10A
source
gate
drain
Fig.1 Simplified outline (TO-92) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DS
±V
GSO
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
DC drain current
peak drain current
total power dissipation
storage temperature range
junction temperature
up to T
amb
= 25
°C
(note 1)
open drain
CONDITIONS
−
−
−
−
−
−65
−
MIN.
MAX.
50
20
175
300
830
150
150
V
V
mA
mA
mW
°C
°C
UNIT
THERMAL RESISTANCE
SYMBOL
R
th j-a
Note
1. Device mounted on a printed circuit board, maximum lead length 4 mm.
PARAMETER
from junction to ambient (note 1)
THERMAL RESISTANCE
150 K/W
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
±I
GSS
V
GS(th)
R
DS(on)
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
CONDITIONS
I
D
= 10
µA;
V
GS
= 0
V
DS
= 40 V; V
GS
= 0
±V
GS
= 20 V; V
DS
= 0
I
D
= 1 mA; V
GS
= V
DS
I
D
= 100 mA; V
GS
= 10 V
I
D
= 100 mA; V
GS
= 5 V
I
D
= 10 mA; V
GS
= 2.5 V
Y
fs
C
iss
C
oss
C
rss
t
on
t
off
transfer admittance
input capacitance
output capacitance
feedback capacitance
I
D
= 100 mA; V
DS
= 10 V
V
DS
= 10 V; V
GS
= 0; f = 1 MHz
V
DS
= 10 V; V
GS
= 0; f = 1 MHz
V
DS
= 10 V; V
GS
= 0; f = 1 MHz
I
D
= 100 mA; V
DD
= 20 V;
V
GS
= 0 to 10 V
I
D
= 100 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
BSN10; BSN10A
MIN.
50
−
−
0.4
−
−
−
40
−
−
−
−
−
TYP.
−
−
−
−
8
12
18
80
8
7
2
MAX.
−
1
100
1.8
15
20
30
−
15
15
5
UNIT
V
µA
nA
V
Ω
Ω
Ω
mS
pF
pF
pF
Switching times
turn-on time
turn-off time
2
5
5
10
ns
ns
handbook,
1
MDA690
handbook,
30
halfpage
MRA781
Ptot
(W)
0.8
C
(pF)
20
0.6
0.4
10
(1)
0.2
(2)
(3)
0
0
50
100
150
200
Tamb (°C)
0
0
5
10
15
20
25
VDS (V)
V
GS
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.2 Power derating curve.
Fig.3
Capacitance as a function of drain-source
voltage, typical values.
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
handbook, halfpage
BSN10; BSN10A
MRA782
handbook, halfpage
500
ID
(mA)
400
MRA783
500
ID
(mA)
400
VGS = 10 V
7V
5V
300
4V
200
3V
100
2.5 V
300
200
100
0
0
0
4
8
VDS (V)
12
0
2
4
6
8
10
VGS (V)
T
j
= 25
°C.
V
DS
= 10 V; T
j
= 25
°C.
Fig.4 Typical output characteristics.
Fig.5 Typical transfer characteristics.
handbook, halfpage
24
MRA788
VGS = 2.5 V
4
V
5V
handbook, halfpage
80
MRA787
RDSon
(Ω)
16
7V
RDSon
(Ω)
60
10 V
8
40
20
0
1
10
10
2
ID (mA)
10
3
0
0
2
4
6
8
10
VGS (V)
T
j
= 25
°C.
V
DS
= 0.1 V; T
j
= 25
°C.
Fig.6
Drain-source on-resistance as a function of
drain current, typical values.
Fig.7
Drain-source on-resistance as a function of
gate-source voltage, typical values.
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN10; BSN10A
MRA784
MRA785
2
handbook, halfpage
k
(2)
handbook,
1.2
halfpage
k
1.1
1.6
(1)
1
1.2
0.9
0.8
0.8
0.4
−50
0
50
100
Tj (
o
C)
150
0.7
−50
0
50
100
Tj (
o
C)
150
R
DS
(
on
)
at T
j
-
k
= -----------------------------------------------
.
R
DS
(
on
)
at 25
°C
Typical R
DS(on)
at 100 mA/10 V.
(1) I
D
= 10 mA; V
GS
= 2.5 V.
(2) I
D
= 100 mA; V
GS
= 10 V.
V
GS
(
th
)
at T
j
-.
k
= --------------------------------------
V
GS
(
th
)
25
°C
Typical V
GS(th)
at 1 mA.
Fig.8
Temperature coefficient of drain-source
on-resistance.
Fig.9
Temperature coefficient gate-source
threshold voltage.
April 1995
5
