HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN
针数
4
制造商包装代码
0.0318
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
2 weeks
外壳连接
COLLECTOR
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
300 V
配置
SINGLE
最小直流电流增益 (hFE)
30
JEDEC-95代码
TO-261AA
JESD-30 代码
R-PDSO-G4
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
4
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
极性/信道类型
PNP
最大功率耗散 (Abs)
1.5 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管元件材料
SILICON
标称过渡频率 (fT)
15 MHz
Base Number Matches
1
文档预览
BSP16T1G
High Voltage Transistors
PNP Silicon
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ T
A
= 25C
(Note 1)
Storage Temperature Range
Junction Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
Value
--300
--350
--6.0
--100
1.5
--65 to
+150
150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
PNP SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction--to--Ambient
Symbol
R
θJA
Max
83.3
Unit
C/W
TO-
-223
CASE 318E
STYLE 1
MARKING
DIAGRAM
AYW
BT2G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in x
0.059 in; mounting pad for the collector lead min. 0.93 sq. in.
1
A
= Assembly Location
Y
= Year
W
= Work Week
BT2 =Device Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BSP16T1G
Package
TO--223
(Pb--Free)
Shipping
†
1000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
September, 2010 - Rev. 7
-
1
Publication Order Number:
BSP16T1/D
BSP16T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector -- Emitter Breakdown Voltage
(I
C
= --50 mAdc, I
B
= 0, L = 25 mH)
Collector -- Base Breakdown Voltage
(I
C
= --100
mAdc,
I
E
= 0)
Collector--Emitter Cutoff Current
(V
CE
= --250 Vdc, I
B
= 0)
Collector--Base Cutoff Current
(V
CB
= --280 Vdc, I
E
= 0)
Emitter--Base Cutoff Current
(V
EB
= --6.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(V
CE
= -- 10 Vdc, I
C
= --50 mAdc)
Collector-Emitter Saturation Voltage
(I
C
= -- 50 mAdc, I
B
= -- 5.0 mAdc)
DYNAMIC CHARACTERISTICS
Current Gain -- Bandwidth Product
(V
CE
= -- 10 Vdc, I
C
= --10 mAdc, f = 30 MHz)
Collector--Base Capacitance
(V
CB
= -- 10 Vdc, I
E
= 0, f = 1.0 MHz)
f
T
C
obo
MHz
15
--
--
pF
15
h
FE
V
CE(sat)
30
--
120
-- 2.0
--
Vdc
V
(BR)CEO
V
(BR)CBO
I
CES
I
CBO
I
EBO
Vdc
--300
--300
--
--
--
--
Vdc
--
mAdc
--50
mAdc
--1.0
mAdc
--20
Symbol
Min
Max
Unit
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2
BSP16T1G
PACKAGE DIMENSIONS
SOT-
-223 (TO-
-261)
CASE 318E--04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
H
E
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
------
------
1.75
2.00
7.00
7.30
10
--
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
------
0.069
0.276
--
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
------
0.078
0.287
10
4
H
E
1
2
3
E
e1
b
e
A
θ
L
L1
C
0.08 (0003)
θ
A1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
mm
inches
SCALE 6:1
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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