型号
- 型号
- 关键词
| 型号 | BSS159N-H6906 | BSS159N-L6327 | BSS159NH6327XT |
|---|---|---|---|
| 描述 | Bipolar Transistors - BJT 600mA 60V PNP | MOSFET N-Ch 60V 230mA SOT-23-3 | MOSFET N-Ch 60V 230mA SOT-23-3 |
| 产品种类 Product Category |
MOSFET | - | MOSFET |
| 制造商 Manufacturer |
Infineon(英飞凌) | - | Infineon(英飞凌) |
| RoHS | Details | - | Details |
| 技术 Technology |
Si | - | Si |
| 安装风格 Mounting Style |
SMD/SMT | - | SMD/SMT |
| 封装 / 箱体 Package / Case |
SOT-23-3 | - | SOT-23-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V | - | 60 V |
| Id - Continuous Drain Current | 230 mA | - | 230 mA |
| Rds On - Drain-Source Resistance | 1.7 Ohms | - | 1.7 Ohms |
| Vgs th - Gate-Source Threshold Voltage | - 3.5 V | - | - 3.5 V |
| Vgs - Gate-Source Voltage | 20 V | - | 20 V |
| Qg - Gate Charge | 1.4 nC | - | 1.4 nC |
| 最小工作温度 Minimum Operating Temperature |
- 55 C | - | - 55 C |
| 最大工作温度 Maximum Operating Temperature |
+ 150 C | - | + 150 C |
| Configuration | Single | - | Single |
| 资格 Qualification |
AEC-Q100 | - | AEC-Q100 |
| Channel Mode | Depletion | - | Depletion |
| 系列 Packaging |
Cut Tape | - | Cut Tape |
| Fall Time | 9 ns | - | 9 ns |
| Forward Transconductance - Min | 100 mS | - | 100 mS |
| 高度 Height |
1.1 mm | - | 1.1 mm |
| 长度 Length |
2.9 mm | - | 2.9 mm |
| Pd-功率耗散 Pd - Power Dissipation |
360 mW | - | 360 mW |
| 产品 Product |
MOSFET Small Signal | - | MOSFET Small Signal |
| Rise Time | 2.9 ns | - | 2.9 ns |
| 工厂包装数量 Factory Pack Quantity |
3000 | - | 3000 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Typical Turn-Off Delay Time | 9 ns | - | 9 ns |
| Typical Turn-On Delay Time | 3.1 ns | - | 3.1 ns |
| 宽度 Width |
1.3 mm | - | 1.3 mm |
| 单位重量 Unit Weight |
0.000282 oz | - | 0.000282 oz |
