型号
- 型号
- 关键词
| 型号 | BSS159N-L6327 | BSS159NH6327XT | BSS159N-H6906 |
|---|---|---|---|
| 描述 | MOSFET N-Ch 60V 230mA SOT-23-3 | MOSFET N-Ch 60V 230mA SOT-23-3 | Bipolar Transistors - BJT 600mA 60V PNP |
| 产品种类 Product Category |
- | MOSFET | MOSFET |
| 制造商 Manufacturer |
- | Infineon(英飞凌) | Infineon(英飞凌) |
| RoHS | - | Details | Details |
| 技术 Technology |
- | Si | Si |
| 安装风格 Mounting Style |
- | SMD/SMT | SMD/SMT |
| 封装 / 箱体 Package / Case |
- | SOT-23-3 | SOT-23-3 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds - Drain-Source Breakdown Voltage | - | 60 V | 60 V |
| Id - Continuous Drain Current | - | 230 mA | 230 mA |
| Rds On - Drain-Source Resistance | - | 1.7 Ohms | 1.7 Ohms |
| Vgs th - Gate-Source Threshold Voltage | - | - 3.5 V | - 3.5 V |
| Vgs - Gate-Source Voltage | - | 20 V | 20 V |
| Qg - Gate Charge | - | 1.4 nC | 1.4 nC |
| 最小工作温度 Minimum Operating Temperature |
- | - 55 C | - 55 C |
| 最大工作温度 Maximum Operating Temperature |
- | + 150 C | + 150 C |
| Configuration | - | Single | Single |
| 资格 Qualification |
- | AEC-Q100 | AEC-Q100 |
| Channel Mode | - | Depletion | Depletion |
| 系列 Packaging |
- | Cut Tape | Cut Tape |
| Fall Time | - | 9 ns | 9 ns |
| Forward Transconductance - Min | - | 100 mS | 100 mS |
| 高度 Height |
- | 1.1 mm | 1.1 mm |
| 长度 Length |
- | 2.9 mm | 2.9 mm |
| Pd-功率耗散 Pd - Power Dissipation |
- | 360 mW | 360 mW |
| 产品 Product |
- | MOSFET Small Signal | MOSFET Small Signal |
| Rise Time | - | 2.9 ns | 2.9 ns |
| 工厂包装数量 Factory Pack Quantity |
- | 3000 | 3000 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Typical Turn-Off Delay Time | - | 9 ns | 9 ns |
| Typical Turn-On Delay Time | - | 3.1 ns | 3.1 ns |
| 宽度 Width |
- | 1.3 mm | 1.3 mm |
| 单位重量 Unit Weight |
- | 0.000282 oz | 0.000282 oz |
