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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BST39; BST40
NPN high-voltage transistors
Product data sheet
Supersedes data of 2000 Jul 03
2004 Dec 14
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
FEATURES
•
Low current (max. 100 mA)
•
High voltage (max. 350 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BST15 and BST16.
MARKING
TYPE NUMBER
BST39
BST40
MARKING CODE
AT1
AT2
3
2
1
BST39; BST40
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
2
3
1
sym042
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BST39
BST40
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2004 Dec 14
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BST39
BST40
V
CEO
collector-emitter voltage
BST39
BST40
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BST39; BST40
MIN.
MAX.
400
300
350
250
5
100
200
100
1.3
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mA
W
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector capacitance
transition frequency
CONDITIONS
I
E
= 0 A; V
CB
= 300 V
I
C
= 0 A; V
EB
= 5 V
I
C
= 20 mA; V
CE
= 10 V
I
E
= i
e
= 0 A; V
CB
= 10 V; f = 1 MHz
−
−
40
−
−
MIN.
MAX.
20
100
−
500
2
−
mV
pF
MHz
UNIT
nA
nA
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
96
16
UNIT
K/W
K/W
collector-emitter saturation voltage I
C
= 50 mA; I
B
= 4 mA
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 70
2004 Dec 14
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
BST39; BST40
SOT89
D
B
A
b
p3
E
H
E
L
p
1
2
b
p2
w
M
b
p1
e
1
e
3
c
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.6
1.4
bp1
0.48
0.35
bp2
0.53
0.40
bp3
1.8
1.4
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
e
3.0
e1
1.5
HE
4.25
3.75
Lp
1.2
0.8
w
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
TO-243
JEITA
SC-62
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
2004 Dec 14
4
