Standard Triac
Symbol
2.T2
TF25A60
Features
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 25 A )
◆
High Commutation dv/dt
◆
Isolation Voltage ( V
ISO
=
1500V
AC )
◆
○
▼
▲
○
3.Gate
1.T1
○
TO-220F
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device may substitute for BTA24-600, BTB24-600 series.
1
2
3
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Sine wave, 50 to 60Hz
T
j
=
125
°C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Ratings
600
25
250/260
312
5.0
1.0
2.0
10
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
2
s
W
W
A
V
°C
°C
t=10ms
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
A.C. 1 minute
July,
2010. Rev.
0
Copyright@Apollo
Electron
Co., Ltd., All rights reserved
1/6
TF
A60
Ratings
Min.
----
─
─
Gate Trigger Current
V
D
=
12
V, R
L
=33
Ω
─
─
─
Gate Trigger Voltage
V
D
=
12
V, R
L
=33
Ω
─
─
T
J
= 125 °C, V
D
=V
DRM,
R
L
=3.3kΩ
T
J
= 125 °C,
V
D
=2/3 V
DRM
I
T
=0.5A
Electrical Characteristics
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage
Holding Current
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
Tj = 125 °C
I
TM
=
35A, Inst.
tp=380
㎲
Typ.
----
__
─
─
─
─
─
─
----
Max.
3
.0
1.55
50
50
50
1.5
1.5
1.5
-----
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
dv/dt
I
H
mA
V
mA
V
0.2
V
40
---
----
----
V/㎲
mA
--
80
2/6
TF25A60
Fig 1. Gate Characteristics
10
3
Fig 2. On-State Voltage
10
1
V
GM
(10V)
On-State Current [A]
Gate Voltage [V]
P
GM
(5W)
P
G(AV)
(1W)
25
℃
10
10
2
T
J
= 125 C
o
I
GM
(2A)
0
10
1
T
J
= 25 C
o
10
-1
V
GD
(0.2V)
1
10
10
2
10
3
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
Allowable Case Temperature [
o
C]
35
30
130
Fig 4. On State Current vs.
Allowable Case Temperature
Power Dissipation [W]
π
θ
360°
θ
2
π
25
20
15
10
5
0
θ
= 180
o
θ
= 150
o
θ
= 120
θ
= 90
o
θ
= 60
θ
= 30
o
o
120
110
θ
: Conduction Angle
o
100
π
θ
360°
θ
2
π
θ
= 30
o
o
90
θ
80
: Conduction Angle
θ
= 60
o
θ
= 90
o
θ
= 120
o
θ
= 150
o
θ
= 180
15
20
25
30
0
5
10
15
20
25
30
0
5
10
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
280
240
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
200
160
120
60Hz
V
GT
(25 C)
V
GT
(t C)
o
o
1
50Hz
80
40
0
0
10
V
V
V
+
GT1
_
GT1
_
GT3
10
1
10
2
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/6
TF25A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
I
GT3
I
GT
(25 C)
I
GT
(t C)
o
o
1
o
_
Transient Thermal Impedance [ C/W]
I
I
+
GT1
_
GT1
1
0.1
-50
0
50
100
o
150
0.1
-2
10
10
-1
10
0
10
1
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
33Ω
33Ω
33Ω
▼
▲
12V
●
A
▼
▲
R
G
12V
●
A
▼
▲
R
G
12V
●
A
V
●
V
●
V
●
R
G
Test Procedure
Ⅰ
Test Procedure
Ⅱ
Test Procedure
Ⅲ
4/6
TF25A60
TO-220F Package Dimension
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Min.
10.4
6.18
9.55
13.47
6.05
1.26
3.17
1.87
2.57
mm
Typ.
Max.
10.6
6.44
9.81
13.73
6.15
1.36
3.43
2.13
2.83
Min.
0.409
0.243
0.376
0.530
0.238
0.050
0.125
0.074
0.101
Inch
Typ.
Max.
0.417
0.254
0.386
0.540
0.242
0.054
0.135
0.084
0.111
2.54
5.08
2.51
1.23
0.45
0.6
3.7
3.2
1.5
2.62
1.36
0.63
1.0
0.099
0.048
0.018
0.023
0.100
0.200
0.103
0.054
0.025
0.039
0.146
0.126
0.059
φ
φ
1
φ
2
F
B
A
E
H
I
φ
φ
1
φ
2
C
L
1
D
2
3
J
K
M
G
1. T1
2. T2
3. Gate
N
O
5/6
