Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4.5
0.4
MAX.
1500
700
8
15
45
1.0
-
0.6
UNIT
V
V
A
A
W
V
A
µs
T
hs
≤
25 ˚C
I
C
= 4.5 A; I
B
= 1.12 A
I
Csat
= 4.5 A; I
B(end)
= 1.1 A
PINNING - SOT399
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
700
8
15
4
6
100
5
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
average over any 20 ms period
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
1
Turn-off current.
November 1997
1
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
2
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
EB
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 4.5 A; I
B
= 1.12 A
I
C
= 4.5 A; I
B
= 1.7 A
I
C
= 100 mA;V
CE
= 5 V
I
C
= 4.5 A;V
CE
= 1 V
MIN.
-
-
-
7.5
700
-
-
-
4
TYP.
-
-
-
13.5
-
-
-
13
5.5
MAX.
1.0
2.0
1.0
-
-
1.0
1.1
-
7.0
UNIT
mA
mA
mA
V
V
V
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
C
c
PARAMETER
Collector capacitance
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Switching times (38 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 4.5 A; I
B(end)
= 1.1 A; L
B
= 6
µH;
-V
BB
= 4 V; (-dI
B
/dt = 0.6 A/µs)
I
Csat
= 4.0 A; I
B(end)
= 0.9 A; L
B
= 6
µH;
-V
BB
= 4 V; (-dI
B
/dt = 0.6 A/µs)
4.7
0.25
5.7
0.35
µs
µs
TYP.
80
MAX.
-
UNIT
pF
µs
µs
t
s
t
f
5.0
0.4
6.0
0.6
2
Measured with half sine-wave voltage (curve tracer).
November 1997
2
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
ICsat
+ 50v
100-200R
IC
90 %
Horizontal
tf
10 %
Oscilloscope
IB
t
ts
IBend
Vertical
100R
6V
30-60 Hz
1R
t
- IBM
Fig.1. Test circuit for V
CEOsust
.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal
adjust for ICsat
1mH
250
200
100
IBend
LB
D.U.T.
12nF
BY228
0
VCE / V
-VBB
min
VCEOsust
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.5. Switching times test circuit.
TRANSISTOR
IC
DIODE
ICsat
100
h
FE
t
5V
IB
IBend
10
t
20us
26us
64us
VCE
Tj = 25 C
Tj = 125 C
1V
1
0.01
t
0.1
IC / A
1
10
Fig.3. Switching times waveforms.
Fig.6. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
November 1997
3
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
VBESAT / V
Tj = 25 C
Tj = 125 C
10
VCESAT / V
Tj = 25 C
Tj = 125 C
6A
4.5A
IC/IB=
3
4
5
1
3A
IC=2A
0.1
0.1
1
IC / A
10
0.1
1
IB / A
10
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
VCESAT / V
IC/IB=
5
4
3
Fig.10. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Eoff / uJ
1
0.9
0.8
0.7
0.6
0.5
1000
IC = 4.5A
3.5A
100
Tj = 25 C
Tj = 125 C
0.4
0.3
0.2
0.1
0
10
0.1
1
IC / A
10
0.1
1
IB / A
10
Fig.8. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
VBESAT / V
Tj = 25 C
Fig.11. Typical turn-off losses. T
j
= 85˚C
Eoff = f (I
B
); parameter I
C
; f = 16 kHz
ts, tf / us
ts
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 125 C
IC=
6A
4.5A
3A
2A
12
11
10
9
8
7
6
5
4
3
2
1
0
4
IC =
4.5A
3.5A
tf
0.1
1
IB / A
10
0
1
2
IB / A
3
Fig.9. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.12. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C; f = 16 kHz
November 1997
4
Rev 2.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
100
IC / A
100
IC / A
= 0.01
= 0.01
tp =
ICM max
10
IC max
II
ICM max
10
IC max
II
tp =
10 us
10 us
Ptot max
Ptot max
1
100 us
1
100 us
I
1 ms
I
1 ms
0.1
10 ms
DC
0.1
10 ms
DC
0.01
1
10
100
VCE / V
1000
0.01
1
10
100
VCE / V
1000
Fig.13. Forward bias safe operating area. T
hs
= 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted with heatsink compound and
30
±
5 newton force on the centre of
the envelope.
Normalised Power Derating
with heatsink compound
Fig.15. Forward bias safe operating area. T
hs
= 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted without heatsink compound and
30
±
5 newton force on the centre of
the envelope.
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
0
20
40
60
80
Ths / C
100
120
140
Fig.14. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
= f (T
hs
)
November 1997
5
Rev 2.300
