型号
- 型号
- 关键词
6A, 450V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
器件类别：晶体管
厂商名称：ST(意法半导体)
厂商官网：http://www.st.com/
下载文档| 型号 | BU912 | BU931ZP | BU932R | BU932RP | BU932RPFI | BU931R | BU931RP | BU931RPFI | BU921TFI |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | 6A, 450V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN | 20A, 350V, NPN, Si, POWER TRANSISTOR, TO-218 | 15A, 450V, NPN, Si, POWER TRANSISTOR, TO-3 | 15A, 450V, NPN, Si, POWER TRANSISTOR, TO-218 | 15A, 450V, NPN, Si, POWER TRANSISTOR, TO-218 | 15A, 400V, NPN, Si, POWER TRANSISTOR, TO-3 | 15A, 400V, NPN, Si, POWER TRANSISTOR, TO-218 | 15A, 400V, NPN, Si, POWER TRANSISTOR, TO-218 | BU921TFI |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | not_compliant | compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | compliant |
| 最大集电极电流 (IC) | 6 A | 20 A | 15 A | 15 A | 15 A | 15 A | 15 A | 15 A | 10 A |
| 配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON |
| 最高工作温度 | 150 °C | 150 °C | 200 °C | 150 °C | 150 °C | 200 °C | 150 °C | 150 °C | 150 °C |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 厂商名称 | ST(意法半导体) | ST(意法半导体) | - | - | - | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) |
| 集电极-发射极最大电压 | 450 V | 350 V | 450 V | 450 V | 450 V | 400 V | 400 V | 400 V | - |
| JEDEC-95代码 | TO-220AB | TO-218 | TO-3 | TO-218 | TO-218 | TO-3 | TO-218 | TO-218 | - |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | O-MBFM-P2 | R-PSFM-T3 | R-PSFM-T3 | O-MBFM-P2 | R-PSFM-T3 | R-PSFM-T3 | - |
| JESD-609代码 | e0 | - | e0 | e0 | e0 | e0 | e0 | e0 | - |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
| 端子数量 | 3 | 3 | 2 | 3 | 3 | 2 | 3 | 3 | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | METAL | PLASTIC/EPOXY | PLASTIC/EPOXY | METAL | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| 功耗环境最大值 | 60 W | 125 W | 175 W | 125 W | 60 W | 175 W | 125 W | 60 W | - |
| 最大功率耗散 (Abs) | 60 W | 150 W | - | - | 60 W | - | - | 60 W | 55 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
| 端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | PIN/PEG | THROUGH-HOLE | THROUGH-HOLE | PIN/PEG | THROUGH-HOLE | THROUGH-HOLE | - |
| 端子位置 | SINGLE | SINGLE | BOTTOM | SINGLE | SINGLE | BOTTOM | SINGLE | SINGLE | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | - |
| VCEsat-Max | 1.8 V | 2 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | - |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - | - | - | - |
| 最小直流电流增益 (hFE) | - | 300 | 300 | 300 | 300 | 300 | 300 | 300 | - |
