BUD630
Silicon NPN High Voltage Switching Transistor
Features
D
D
D
D
D
Simple-sWitch-Off Transistor
(SWOT)
HIGH SPEED technology
Planar passivation
100 kHz switching rate
Very low switching losses
D
D
D
D
Very low dynamic saturation
Very low operating temperature
Optimized RBSOA
High reverse voltage
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
2
94 8965
1
1
94 8964
3
2
3
BUD630
1 Base 2 Collector 3 Emitter
BUD630 –SMD
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings
T
case
= 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
g
Test Conditions
Symbol
V
CEO
V
CEW
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
400
500
700
11
6
9
3
4.5
40
150
–65 to +150
Unit
V
V
V
V
A
A
A
A
W
°
C
°
C
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
T
case
≤
25
°
C
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
1 (9)
BUD630
Maximum Thermal Resistance
T
case
= 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
R
thJC
Value
3.12
Unit
K/W
Electrical Characteristics
T
case
= 25°C, unless otherwise specified
Parameter
Collector cut-off current
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage
Collector-emitter saturation voltage
g
Base-emitter saturation voltage
g
DC forward current transfer ratio
Test Conditions
V
CES
= 700 V
V
CES
= 700 V; T
case
= 150
°
C
I
C
= 300 mA; L = 125 mH;
I
measure
= 100 mA
I
E
= 1 mA
I
C
= 1 A; I
B
= 0.25 A
I
C
= 3 A; I
B
= 1 A
I
C
= 1 A; I
B
= 0.25 A
I
C
= 3 A; I
B
= 1 A
V
CE
= 2 V; I
C
= 10 mA
V
CE
= 2 V; I
C
= 1 A
V
CE
= 2 V; I
C
= 3 A
V
CE
= 5 V; I
C
= 6 A
V
S
= 50 V; L = 1 mH; I
C
= 6 A;
I
B1
= 2 A; –I
B2
= 0.6 A;
–V
BB
= 5 V
I
C
= 3 A; I
B
= 0.6 A, t = 1
m
s
I
C
= 3 A; I
B
= 0.6 A, t = 3
m
s
I
C
= 200 mA; V
CE
= 10 V;
f = 1 MHz
Symbol
I
CES
I
CES
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
CEsat
V
BEsat
V
BEsat
h
FE
h
FE
h
FE
h
FE
V
CEW
Min
Typ
Max
50
0.5
Unit
m
A
mA
V
V
V
V
V
V
400
11
0.2
0.4
1
1.2
15
15
7
4
500
Collector-emitter working voltage
V
Dynamic saturation voltage
y
g
Gain bandwidth product
V
CEsatdyn
V
CEsatdyn
f
T
5
1
4
10
2.5
V
V
MHz
2 (9)
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
BUD630
Switching Characteristics
T
case
= 25°C, unless otherwise specified
Parameter
Test Conditions
Resistive load (figure 2)
Turn on time
I
C
= 1 A; I
B1
= 0.25 A; –I
B2
= 0.5 A;
;
;
;
V
S
= 250 V
Storage time
Fall time
Turn on time
I
C
= 3 A; I
B1
= 0.6 A; –I
B2
= 1.5 A;
;
;
;
V
S
= 250 V
Storage time
Fall time
Inductive load (figure 3)
Storage time
I
C
= 1 A; I
B1
= 0.25 A; –I
B2
= 0.5 A;
;
;
;
V
clamp
= 300 V; L = 200
m
H
Fall time
Storage time
I
C
= 3 A; I
B1
= 0.6 A; –I
B2
= 1.5 A;
;
;
;
V
clamp
= 300 V; L = 200
m
H
Fall time
Symbol
t
on
t
s
t
f
t
on
t
s
t
f
t
s
t
f
t
s
t
f
Min
Typ
0.15
2.2
0.3
0.35
1.2
0.1
2.3
0.2
1.3
0.1
Max
0.25
3
0.4
0.5
2
0.15
3
0.3
2
0.15
Unit
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
m
s
94 8863
V
S2
+
10 V
I
B
I
C
w
I5
I
measure
I
C
C
V
S1
+
0 to 30 V
V
(BR)CEO
t
p
T
t
p
3 Pulses
+
L
C
V
CE
V
(BR)CEO
+
0.1
+
10 ms
I
(BR)R
100 m
W
Figure 1. Test circuit for V
(BR)CE0
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
3 (9)
BUD630
94 8852
I
B
I
B1
0
t
R
C
–I
B2
I
C
(1)
I
B1
R
B
V
BB
+
V
CE
I
B
V
CC
I
C
0.9 I
C
0.1 I
C
t
d
t
on
t
r
t
t
s
t
off
t
f
(1) Fast electronic switch
Figure 2. Test circuit for switching characteristics – resistive load
94 8853
I
B
I
B1
L
C
0
–I
B2
I
C
(2)
(1)
I
B1
R
B
V
BB
I
B
V
CE
V
clamp
I
C
V
CC
0.9 I
C
t
+
(1) Fast electronic switch
(2) Fast recovery rectifier
0.1 I
C
t
t
s
t
r
Figure 3. Test circuit for switching characteristics – inductive load
4 (9)
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
BUD630
Typical Characteristics
(T
case
= 25
_
C unless otherwise specified)
100
P
tot
– Total Power Dissipation ( W )
8
I
C
– Collector Current ( A )
3.12 K/W
12.5 K/W
10
6
1
25 K/W
0.1
0.01
0.001
50 K/W
R
thJA
= 135 K/W
4
0.1 x I
C
< I
B2
< 0.5 x I
C
V
CEsat
< 2V
0
0
100
200
300
400
500
600
2
0
95 10499
25
50
75
100
125
150
95 10498
V
CE
– Collector Emitter Voltage ( V )
T
case
– Case Temperature (
°C
)
Figure 4. V
CEW
– Diagram
V
CEsat
– Collector Emitter Saturation Voltage ( V )
10
I
C
– Collector Current ( A )
I
B
= 970 mA
800 mA
6
590 mA
400 mA
4
100 mA
2
0
0
95 10502
Figure 7. P
tot
vs.T
case
10
8
1
4A
0.1
I
C
= 0.8A
0.01
0.01
1A
3A
2A
76 mA
4
8
12
16
20
0.1
1
10
V
CE
– Collector Emitter Voltage ( V )
95 10503
I
B
– Base Current ( A )
Figure 5. I
C
vs. V
CE
h
FE
– Forward DC Current Transfer Ratio
h
FE
– Forward DC Current Transfer Ratio
100
100
Figure 8. V
CEsat
vs. I
B
T
j
= 125°C
75°C
25°C
10
V
CE
= 25V
10
10V
5V
2V
1
0.01
95 10500
0.1
1
10
95 10501
1
0.01
0.1
1
10
I
C
– Collector Current ( A )
I
C
– Collector Current ( A )
Figure 6. h
FE
vs. I
C
Figure 9. h
FE
vs. I
C
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
5 (9)
微控制器 MCU
