型号
- 型号
- 关键词
Power Field-Effect Transistor, 49A I(D), 75V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
厂商名称：Nexperia
器件标准：
| 型号 | BUK7Y18-75B | 934063302115 |
|---|---|---|
| 描述 | Power Field-Effect Transistor, 49A I(D), 75V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | Power Field-Effect Transistor, 49A I(D), 75V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 |
| 是否Rohs认证 | 符合 | 符合 |
| 厂商名称 | Nexperia | Nexperia |
| 包装说明 | SMALL OUTLINE, R-PSSO-G4 | SMALL OUTLINE, R-PSSO-G4 |
| Reach Compliance Code | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 118 mJ | 118 mJ |
| 外壳连接 | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 75 V | 75 V |
| 最大漏极电流 (ID) | 49 A | 49 A |
| 最大漏源导通电阻 | 0.018 Ω | 0.018 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | MO-235 | MO-235 |
| JESD-30 代码 | R-PSSO-G4 | R-PSSO-G4 |
| JESD-609代码 | e3 | e3 |
| 湿度敏感等级 | 1 | 1 |
| 元件数量 | 1 | 1 |
| 端子数量 | 4 | 4 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 198 A | 198 A |
| 表面贴装 | YES | YES |
| 端子面层 | Tin (Sn) | Tin (Sn) |
| 端子形式 | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| Base Number Matches | 1 | 1 |