MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL147/D
™
Data Sheet
SWITCHMODE
™
Designer's
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL147/BUL147F have an applications specific state–of–the–art die designed
for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power
supplies for all types of electronic equipment. These high–voltage/high–speed
transistors offer the following:
•
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
•
Parametric Distributions are Tight and Consistent Lot–to–Lot
•
Two Package Choices: Standard TO–220 or Isolated TO–220
•
BUL147F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25°C)
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VISOL
BUL147
BUL147F
400
700
9.0
8.0
16
4.0
8.0
—
—
—
125
1.0
4500
3500
1500
45
0.36
Unit
Vdc
Vdc
Vdc
Adc
Adc
Volts
BUL147*
BUL147F*
*Motorola Preferred Device
POWER TRANSISTOR
8.0 AMPERES
700 VOLTS
45 and 125 WATTS
BUL147
CASE 221A–06
TO–220AB
PD
TJ, Tstg
Watts
W/°C
°C
Operating and Storage Temperature
– 65 to 150
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
Symbol
R
θJC
R
θJA
TL
BUL44
1.0
62.5
260
BUL44F
2.78
62.5
Unit
°C/W
°C
BUL147F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Collector Cutoff Current
(VCE = 500 V, VEB = 0)
(TC = 125°C)
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
≤
10%.
(2) Proper strike and creepage distance must be provided.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
Min
Typ
Max
Unit
VCEO(sus)
ICEO
ICES
400
—
—
—
—
—
—
—
—
—
—
—
—
100
100
500
100
100
Vdc
µAdc
µAdc
IEBO
µAdc
(continued)
REV 1
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
3–1
BUL147 BUL147F
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)
Base–Emitter Saturation Voltage
(IC = 4.5 Adc, IB = 0.9 Adc)
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.2 Adc)
(TC = 125°C)
(IC = 4.5 Adc, IB = 0.9 Adc)
(TC = 125°C)
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
(TC = 125°C)
DC Current Gain
(IC = 4.5 Adc, VCE = 1.0 Vdc)
DC Current Gain
(IC = 2.0 Adc, VCE = 1.0 Vdc)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 8.0 V)
(IC = 2.0 Adc
IB1 = 200 mAdc
VCC = 300 V)
(IC = 5.0 Adc
IB1 = 0.9 Adc
VCC = 300 V)
1.0
µs
3.0
µs
1.0
µs
3.0
µs
(TC = 125°C)
(TC = 125°C)
(TC = 125°C)
(TC = 125°C)
ton
(TC = 125°C)
toff
(TC = 125°C)
Turn–On Time
Turn–Off Time
(TC = 125°C)
SWITCHING CHARACTERISTICS: Inductive Load
(Vclamp = 300 V, VCC = 15 V, L = 200
µH)
Fall Time
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
tc
(IC = 4.5 Adc, IB1 = 0.9 Adc
IB2 = 0.9 Adc)
tfi
(TC = 125°C)
tsi
tc
(IC = 4.5 Adc, IB1 = 0.9 Adc
IB2 = 2.25 Adc)
tfi
(TC = 125°C)
tsi
tc
(IC = 2.0 Adc, IB1 = 0.2 Adc
IB2 = 1.0 Adc)
tfi
(TC = 125°C)
tsi
—
—
—
—
—
—
—
—
—
—
—
—
60
—
2.6
—
—
—
100
120
1.3
1.9
210
230
80
100
1.6
2.1
170
200
—
150
—
4.3
200
330
180
—
2.5
—
350
—
150
—
3.2
—
300
—
180
—
3.8
—
350
—
ns
µs
ns
ns
µs
ns
ns
µs
ns
(IC = 4.5 Adc, IB1 = 0.9 Adc
IB1 = 2.25 Adc, VCC = 300 V)
ton
(TC = 125°C)
toff
fT
Cob
Cib
—
—
—
—
—
—
—
—
—
—
—
14
100
1750
3.0
5.5
0.8
1.4
3.3
8.5
0.4
1.0
—
175
2500
—
—
—
—
—
—
—
—
MHz
pF
pF
(TC = 125°C)
(TC = 25°C to 125°C)
hFE
VBE(sat)
VCE(sat)
—
—
—
—
14
—
8.0
7.0
10
10
0.25
0.3
0.35
0.35
—
30
12
11
18
20
0.5
0.5
0.7
0.8
34
—
—
—
—
—
—
—
—
0.82
0.92
1.1
1.25
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
Dynamic Saturation Voltage:
Determined 1.0
µs
and
3.0
µs
respectively after
rising IB1 reaches 90% of
final IB1
(see Figure 18)
VCE(dsat)
Volts
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
≤
10%, Pulse Width = 20
µs)
Turn–On Time
Turn–Off Time
(IC = 2.0 Adc, IB1 = 0.2 Adc
IB2 = 1.0 Adc, VCC = 300 V)
—
—
—
—
—
—
—
—
200
190
1.0
1.6
85
100
1.5
2.0
350
—
2.5
—
150
—
2.5
—
ns
µs
ns
µs
3–2
Motorola Bipolar Power Transistor Device Data
BUL147 BUL147F
TYPICAL STATIC CHARACTERISTICS
100
TJ = 125°C
h FE , DC CURRENT GAIN
TJ = 25°C
10
TJ = – 20°C
VCE = 1 V
h FE , DC CURRENT GAIN
100
TJ = 125°C
TJ = 25°C
10
TJ = – 20°C
VCE = 5 V
1
0.01
0.1
1
10
1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2
TJ = 25°C
V CE , VOLTAGE (VOLTS)
V CE , VOLTAGE (VOLTS)
1.5
IC = 1 A
3A
5A
8A
10 A
10
1
1
0.1
IC/IB = 10
IC/IB = 5
0.5
0
0.01
0.1
1
IB, BASE CURRENT (AMPS)
10
0.01
0.01
TJ = 25°C
TJ = 125°C
0.1
1
IC COLLECTOR CURRENT (AMPS)
10
Figure 3. Collector Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
1.3
1.2
V BE , VOLTAGE (VOLTS)
1.1
10000
Cib
1000
C, CAPACITANCE (pF)
Cob
100
TJ = 25°C
f = 1 MHz
1
0.9
0.8
0.7
0.6
0.5 TJ = 125°C
0.4
0.01
0.1
1
IC/IB = 5
IC/IB = 10
10
TJ = 25°C
10
1
1
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Base–Emitter Saturation Region
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data
3–3
BUL147 BUL147F
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
600
500
400
t, TIME (ns)
300
200
100
0
0
1
2
3
4
5
6
7
8
IC, COLLECTOR CURRENT (AMPS)
IB(off) = IC/2
VCC = 300 V
PW = 20
µs
TJ = 125°C
TJ = 25°C
IC/IB = 5
IC/IB = 10
4000
3500
3000 I /I = 5
C B
t, TIME (ns)
2500
2000
1500
1000
500
0
1
2
3
4
5
6
7
8
IC, COLLECTOR CURRENT (AMPS)
IC/IB = 10
TJ = 25°C
TJ = 125°C
IB(off) = IC/2
VCC = 300 V
PW = 20
µs
Figure 7. Resistive Switching, ton
3500
3000
2500
t, TIME (ns)
2000
1500
1000
500
0
1
2
TJ = 25°C
TJ = 125°C
IC/IB = 5
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µH
4000
3500
t si , STORAGE TIME (ns)
3000
2500
2000
1500
1000
500
7
8
0
Figure 8. Resistive Switching, toff
TJ = 25°C
TJ = 125°C
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µH
IC = 2 A
IC/IB = 10
IC = 4.5 A
3
4
5
6
7
8
9 10 11
hFE, FORCED GAIN
12
13
14
15
3
4
6
5
IC COLLECTOR CURRENT (AMPS)
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
300
250
200
t, TIME (ns)
t, TIME (ns)
tfi
150
100
50
0
1
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µH
2
3
4
5
IC, COLLECTOR CURRENT (AMPS)
tc
250
TJ = 25°C
TJ = 125°C
tc
150
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µH
200
100
50
TJ = 25°C
TJ = 125°C
6
7
tfi
1
2
3
4
5
6
7
8
0
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, tc and tfi
IC/IB = 5
Figure 12. Inductive Switching, tc and tfi
IC/IB = 10
3–4
Motorola Bipolar Power Transistor Device Data
BUL147 BUL147F
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
180
160
t fi , FALL TIME (ns)
140
120
100
80
60
3
IC = 4.5 A
4
5
6
7
8
9 10 11
hFE, FORCED GAIN
12
13
14
15
TJ = 25°C
TJ = 125°C
IC = 2 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µH
300
IC = 2 A
TC , CROSSOVER TIME (ns)
250
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µH
200
150
IC = 4.5 A
TJ = 25°C
TJ = 125°C
3
4
5
6
7
8
9 10 11
hFE, FORCED GAIN
12
13
14
15
100
50
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
100
DC (BUL147)
I C , COLLECTOR CURRENT (AMPS)
5 ms
10
EXTENDED
SOA
DC (BUL147F)
0.1
1 ms
10
µs
1
µs
I C , COLLECTOR CURRENT (AMPS)
9
8
7
6
5
4
3
2
1
0
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
0
100
200
VBE(off) = 0 V
300
400
500
–1, 5 V
600
700
800
–5V
TC
≤
125°C
IC/IB
≥
4
LC = 500
µH
1
0.01
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 15 is based on TC
= 25°C; TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC > 25°C. Second breakdown limita-
tions do not derate the same as thermal limitations. Allowable
current at the voltages shown in Figure 15 may be found at
any case temperature by using the appropriate curve on Fig-
ure 17. TJ(pk) may be calculated from the data in Figure 20
and 21. At any case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction re-
verse–biased. The safe level is specified as a reverse–biased
safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode.
3–5
1.0
POWER DERATING FACTOR
SECOND BREAKDOWN
DERATING
0.8
0.6
0.4
THERMAL DERATING
0.2
0.0
20
40
80
60
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 17. Forward Bias Power Derating
Motorola Bipolar Power Transistor Device Data
FPGA/CPLD
