BULD3N7T4
Medium voltage fast-switching NPN Power Transistor
General features
■
■
■
■
■
Medium voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
In compliance with the 2002/93/EC European
Directive
DPAK
3
1
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is expressly designed for a new
solution to be used in compact fluorescent lamps,
H.F. ballast voltage FED where it is coupled with
the BULD3P5T4, its complementary PNP
transistor.
Applications
■
Electronic ballast for fluorescent lighting
Order codes
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Internal schematic
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Part Number
BULD3N7T4
Marking
BULD3N7
Package
DPAK
Packing
Tape & Reel
June 2006
Rev 1
1/10
www.st.com
10
BULD3N7T4
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
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2/10
BULD3N7T4
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
(I
C
= 0, I
B
= 0.75 A, t
p
< 100ms, T
j
< 150°C)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Storage temperature
Max. operating junction temperature
Value
700
400
V
(BR)EBO
3
6
1.5
3
20
Unit
V
V
V
A
A
A
Table 2.
Symbol
R
thj-case
R
thj-amb
Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-amb
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-65 to 150
150
ct
u
s)
(
A
W
°C
°C
Value
6.25
100
Unit
°C/W
°C/W
__max
__max
3/10
Electrical characteristics
BULD3N7T4
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 3.
Symbol
I
CES
V
(BR)EBO
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
=0V)
Test Conditions
V
CE
=700V
V
CE
=700V
Min.
Typ.
Max.
0.1
0.5
10
18
Unit
mA
mA
V
T
C
=125°C
Emitter-Base Breakdown
I
E
=10mA
Voltage (I
C
= 0)
I
C
=100mA
Collector-emitter
V
CEO(sus) (1)
sustaining voltage
(I
B
= 0)
V
CE(sat) (1)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
400
I
C
= 0.7A
_ _ _
I
B
= 0.1A
I
C
= 1 A
__ _
I
B
= 0.2A
I
C
= 0.5A
____
I
B
= 0.1A
I
C
= 1A
_____
I
B
= 0.2A
I
C
= 2A
_____
I
B
= 0.4A
I
C
=10mA
V
CE
=5V
V
CE
=5V
V
CE
=5V
_
I
C
=0.7A
I
C
=2A
I
C
= 0.7A
0.5
0.5
1.1
1.2
1.3
V
V
BE(sat)
(1)
h
FE
DC current gain
t
r
t
s
t
f
Resistive load
Rise time
Storage time
Fall time
Inductive load
Storage time
Fall time
t
s
t
f
O
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b
te
le
Note (1) Pulsed duration = 300
µs,
duty cycle
≤1.5%
r
P
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od
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t(
so
b
-O
T
p
= 30µs
I
C
= 1A
____
V
BE(off)
= -5V
L = 1mH
(see fig, 10)
V
CC
= 250V
et
l
P
e
10
18
4
od
r
ct
u
s)
(
V
V
V
V
V
34
I
B1
= 0.14A
_
I
B2
= -0.14A
(see fig, 9)
I
B1
= 0.2A
R
bb
= 0Ω
80
2.4
100
ns
µs
ns
V
clamp
= 200V
450
120
ns
ns
4/10
BULD3N7T4
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
DC current gain
Figure 3.
DC current gain
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
Base-emitter saturation
voltage
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t(
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P
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Figure 6.
Switching times resistive
load
5/10
