BUP 309
IGBT
Preliminary data
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
• Low forward voltage drop
Remark: The TO-218 AB case doesn't solve the
standards VDE 0110 and UL 508 for creeping distance
Pin 1
G
Type
BUP 309
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
1700
1700
Unit
V
Pin 2
C
Ordering Code
Q67078-A4204-A2
Pin 3
E
V
CE
I
C
Package
TO-218 AB
1700V 25A
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
25
16
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
50
32
T
C
= 25 °C
T
C
= 90 °C
Avalanche energy, single pulse
E
AS
23
mJ
I
C
= 15 A,
V
CC
= 50 V,
R
GE
= 25
Ω
L
= 200 µH,
T
j
= 25 °C
Power dissipation
P
tot
310
W
-55 ... + 150
-55 ... + 150
Jul-30-1996
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
Semiconductor Group
T
j
T
stg
1
BUP 309
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal Resistance
Thermal resistance, chip case
Symbol
-
-
Values
E
55 / 150 / 56
Unit
-
R
thJC
≤
0.4
K/W
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
Values
typ.
max.
Unit
V
GE(th)
4.5
5.5
3.5
-
4.5
1
-
-
6.5
4.2
-
-
V
V
GE
=
V
CE,
I
C
= 1 mA
Collector-emitter saturation voltage
V
CE(sat)
-
-
-
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 125 °C
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 150 °C
Zero gate voltage collector current
I
CES
-
-
250
1000
µA
V
CE
= 1700 V,
V
GE
= 0 V,
T
j
= 25 °C
V
CE
= 1700 V,
V
GE
= 0 V,
T
j
= 125 °C
Gate-emitter leakage current
I
GES
-
100
nA
V
GE
= 20 V,
V
CE
= 0 V
AC Characteristics
Transconductance
g
fs
-
-
2000
160
65
-
S
pF
-
2700
240
100
V
CE
= 20 V,
I
C
= 15 A
Input capacitance
C
iss
C
oss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Semiconductor Group
2
Jul-30-1996
BUP 309
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
Values
typ.
max.
Unit
t
d(on)
-
-
-
ns
V
CC
= 1200 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 33
Ω
Rise time
t
r
-
-
-
V
CC
= 1200 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 33
Ω
Turn-off delay time
t
d(off)
-
150
230
V
CC
= 1200 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 33
Ω
Fall time
t
f
-
50
80
V
CC
= 1200 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 33
Ω
Semiconductor Group
3
Jul-30-1996
BUP 309
Power dissipation
P
tot
=
ƒ
(T
C
)
parameter:
T
j
≤
150 °C
320
Collector current
I
C
=
ƒ
(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
26
A
W
22
P
tot
240
I
C
20
18
200
16
14
160
12
120
10
8
80
6
4
2
0
0
0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
°C
160
40
T
C
T
C
Safe operating area
I
C
=
ƒ
(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
2
t
= 3.4µs
p
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
0
IGBT
A
K/W
10 µs
I
C
10
1
Z
thJC
10
-1
100 µs
1 ms
D = 0.50
0.20
10
0
10 ms
10
-2
0.10
0.05
single pulse
0.02
0.01
DC
10
-1
0
10
10
1
10
2
10
3
V
10
-3
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
V
CE
t
p
Semiconductor Group
4
Jul-30-1996
BUP 309
Package Outlines
Dimensions in mm
Weight: 8 g
Semiconductor Group
5
Jul-30-1996
