BUP 314S
Preliminary data
IGBT
• High switching speed
• Very low switching losses
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
G
Type
BUP 314S
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
1200
1200
Unit
V
Pin 2
C
Ordering Code
C67040-A4207-A2
Pin 3
E
V
CE
I
C
Package
TO-218 AB
1200V 25A
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
25
17
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
50
34
T
C
= 25 °C
T
C
= 90 °C
Avalanche energy, single pulse
E
AS
65
mJ
I
C
= 25 A,
V
CC
= 50 V,
R
GE
= 25
Ω
L
= 200 µH,
T
j
= 25 °C
Power dissipation
P
tot
300
W
-55 ... + 150
-55 ... + 150
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
T
j
T
stg
Semiconductor Group
1
Feb-07-1997
BUP 314S
Preliminary data
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal Resistance
Thermal resistance, chip case
Symbol
-
-
Values
E
55 / 150 / 56
Unit
-
R
thJC
≤
0.42
K/W
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Collector-emitter breakdown voltage
Values
typ.
max.
Unit
V
(BR)CES
1200
-
5.5
5.5
4.6
8
6.6
-
-
-
6.5
7.6
-
-
-
V
V
GE
= 0 V,
I
C
= 0.3 mA,
T
j
= 25 °C
Gate threshold voltage
V
GE(th)
4.5
V
GE
=
V
CE,
I
C
= 0.35 mA,
T
j
= 25 °C
Collector-emitter saturation voltage
V
CE(sat)
-
-
-
-
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 125 °C
V
GE
= 15 V,
I
C
= 30 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 30 A,
T
j
= 125 °C
Zero gate voltage collector current
I
CES
-
0.8
mA
nA
-
100
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 °C
Gate-emitter leakage current
I
GES
V
GE
= 25 V,
V
CE
= 0 V
Semiconductor Group
2
Feb-07-1997
BUP 314S
Preliminary data
AC Characteristics
Transconductance
g
fs
8.5
12
1950
180
120
-
S
pF
-
2600
270
180
V
CE
= 20 V,
I
C
= 15 A
Input capacitance
C
iss
C
oss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
Values
typ.
max.
Unit
t
d(on)
-
65
100
ns
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 47
Ω
Rise time
t
r
-
60
90
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 47
Ω
Turn-off delay time
t
d(off)
-
420
560
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 47
Ω
Fall time
t
f
-
70
95
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 47
Ω
Semiconductor Group
3
Feb-07-1997
BUP 314S
Preliminary data
Power dissipation
P
tot
=
ƒ
(T
C
)
parameter:
T
j
≤
150 °C
320
Collector current
I
C
=
ƒ
(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
26
A
W
22
P
tot
240
I
C
20
18
200
16
14
160
12
120
10
8
80
6
4
2
0
0
20
40
60
80
100
120
°C
160
0
0
20
40
60
80
100
120
°C
160
40
T
C
T
C
Safe operating area
I
C
=
ƒ
(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
2
tp
= 18.0µs
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
0
IGBT
A
K/W
100 µs
I
C
10
1
Z
thJC
10
-1
1 ms
D = 0.50
0.20
10
0
10 ms
10
-2
0.10
0.05
0.02
0.01
DC
10
-1
0
10
10
-3
-5
10
single pulse
10
1
10
2
10
3
V
10
-4
10
-3
10
-2
10
-1
s 10
0
V
CE
t
p
Semiconductor Group
4
Feb-07-1997
BUP 314S
Preliminary data
Typ. output characteristics
Typ. output characteristics
I
C
=
f
(V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 25 °C
55
A
I
C
=
f
(V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 125 °C
55
A
I
C
45
40
35
30
25
20
15
10
5
0
0
17V
15V
13V
11V
9V
7V
I
C
45
40
35
30
25
20
15
10
5
17V
15V
13V
11V
9V
7V
2
4
6
V
10
0
0
2
4
6
V
10
V
CE
V
CE
Typ. transfer characteristics
I
C
=
f
(V
GE
)
parameter:
t
p
=80µs,V
CE
=20 V
60
A
50
I
C
45
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10
V
14
V
GE
Semiconductor Group
5
Feb-07-1997
