BUP 401
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
G
Type
BUP 401
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
600
600
Unit
V
Pin 2
C
Ordering Code
C67078-A4404-A2
Pin 3
E
V
CE
600V
I
C
29A
Package
TO-220 AB
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
29
18
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
56
34
T
C
= 25 °C
T
C
= 90 °C
Avalanche energy, single pulse
E
AS
24
mJ
I
C
= 15 A,
V
CC
= 50 V,
R
GE
= 25
Ω
L
= 200 µH,
T
j
= 25 °C
Power dissipation
P
tot
125
W
-55 ... + 150
-55 ... + 150
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
T
j
T
stg
Semiconductor Group
1
Jul-31-1996
BUP 401
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal Resistance
Thermal resistance, chip case
Symbol
-
-
Values
E
55 / 150 / 56
Unit
-
R
thJC
≤
1
K/W
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
Values
typ.
max.
Unit
V
GE(th)
4.5
5.5
2.1
2.2
3
3.3
-
-
6.5
2.7
2.8
-
-
V
V
GE
=
V
CE,
I
C
= 0.35 mA
Collector-emitter saturation voltage
V
CE(sat)
-
-
-
-
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 125 °C
V
GE
= 15 V,
I
C
= 30 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 30 A,
T
j
= 125 °C
Zero gate voltage collector current
I
CES
-
100
µA
nA
-
100
V
CE
= 600 V,
V
GE
= 0 V,
T
j
= 25 °C
Gate-emitter leakage current
I
GES
V
GE
= 25 V,
V
CE
= 0 V
AC Characteristics
Transconductance
g
fs
3
-
800
85
52
-
S
pF
-
1100
130
80
V
CE
= 20 V,
I
C
= 15 A
Input capacitance
C
iss
C
oss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Semiconductor Group
2
Jul-31-1996
BUP 401
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
Values
typ.
max.
Unit
t
d(on)
-
40
60
ns
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 68
Ω
Rise time
t
r
-
60
90
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 68
Ω
Turn-off delay time
t
d(off)
-
250
470
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 68
Ω
Fall time
t
f
-
500
680
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 68
Ω
Semiconductor Group
3
Jul-31-1996
BUP 401
Power dissipation
P
tot
=
ƒ
(T
C
)
parameter:
T
j
≤
150 °C
130
W
110
Collector current
I
C
=
ƒ
(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
30
A
26
P
tot
100
90
I
C
24
22
20
80
70
60
50
40
30
18
16
14
12
10
8
6
20
10
0
0
20
40
60
80
100
120
°C
160
4
2
0
0
20
40
60
80
100
120
°C
160
T
C
T
C
Safe operating area
I
C
=
ƒ
(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
2
t
= 21.0µs
p
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
1
IGBT
K/W
A
I
C
100 µs
Z
thJC
10
1
10
0
10
-1
D = 0.50
1 ms
0.20
0.10
10
-2
0.05
0.02
10
0
10 ms
single pulse
DC
10
-1
0
10
1
2
3
0.01
10
10
V 10
10
-3
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
V
CE
t
p
Semiconductor Group
4
Jul-31-1996
BUP 401
Typ. output characteristics
Typ. output characteristics
I
C
=
f
(V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 25 °C
30
A
26
17V
15V
13V
11V
9V
7V
I
C
=
f
(V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 125 °C
30
A
26
17V
15V
13V
11V
9V
7V
I
C
24
22
20
18
16
14
12
10
8
6
4
2
0
0
I
C
24
22
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
V
5
1
2
3
V
5
V
CE
V
CE
Typ. transfer characteristics
I
C
=
f
(V
GE
)
parameter:
t
p
= 80 µs,
V
CE
= 20 V
30
A
26
I
C
24
22
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
V
14
V
GE
Semiconductor Group
5
Jul-31-1996
