BUP 402
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
G
Type
BUP 402
Maximum Ratings
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector-gate voltage
Symbol
Values
600
Unit
V
Pin 2
C
Ordering Code
C67078-A4405-A2
Pin 3
E
V
CE
600V
I
C
36A
Package
TO-220 AB
V
CE
V
EC
V
CGR
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
600
V
GE
I
C
± 20
A
36
22
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
72
40
T
C
= 25 °C
T
C
= 90 °C
Avalanche energy, single pulse
E
AS
42
mJ
I
C
= 20 A,
V
CC
= 50 V,
R
GE
= 25
Ω
L
= 200 µH,
T
j
= 25 °C
Power dissipation
P
tot
150
W
- 55 ... + 150
- 55 ... + 150
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
T
j
T
stg
Semiconductor Group
1
Dec-02-1996
BUP 402
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal Resistance
Thermal resistance, chip case
Symbol
-
-
Values
E
55 / 150 / 56
Unit
-
R
thJC
≤
0.83
K/W
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
Values
typ.
max.
Unit
V
GE(th)
4.5
5.5
2.1
2.2
3
3.3
-
-
6.5
2.7
2.8
-
-
V
V
GE
=
V
CE,
I
C
= 0.5 mA,
T
j
= 25 °C
Collector-emitter saturation voltage
V
CE(sat)
-
-
-
-
V
GE
= 15 V,
I
C
= 20 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 20 A,
T
j
= 125 °C
V
GE
= 15 V,
I
C
= 40 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 40 A,
T
j
= 125 °C
Zero gate voltage collector current
I
CES
-
100
µA
nA
-
100
V
CE
= 600 V,
V
GE
= 0 V,
T
j
= 25 °C
Gate-emitter leakage current
I
GES
V
GE
= 25 V,
V
CE
= 0 V
AC Characteristics
Transconductance
g
fs
4
-
1040
115
66
-
S
pF
-
1400
175
110
V
CE
= 20 V,
I
C
= 20 A
Input capacitance
C
iss
C
oss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Semiconductor Group
2
Dec-02-1996
BUP 402
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
t
d(on)
Values
typ.
max.
Unit
ns
40
60
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 20 A
R
Gon
= 47
Ω
Rise time
-
t
r
-
70
110
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 20 A
R
Gon
= 47
Ω
Turn-off delay time
t
d(off)
-
250
330
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 20 A
R
Goff
= 47
Ω
Fall time
t
f
-
500
680
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 20 A
R
Goff
= 47
Ω
Semiconductor Group
3
Dec-02-1996
BUP 402
Power dissipation
P
tot
=
ƒ
(T
C
)
parameter:
T
j
≤
150 °C
160
Collector current
I
C
=
ƒ
(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
36
A
W
P
tot
120
I
C
28
24
100
20
80
16
60
12
40
8
4
0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
°C
160
20
0
0
T
C
T
C
Safe operating area
I
C
=
ƒ
(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
2
t
= 17.0µs
p
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
0
IGBT
A
K/W
I
C
100 µs
Z
thJC
10
1
10
-1
1 ms
D = 0.50
0.20
10
0
10 ms
10
-2
0.10
0.05
single pulse
0.02
0.01
DC
10
-1
0
10
10
-3
-5
10
10
1
10
2
V 10
3
10
-4
10
-3
10
-2
10
-1
s 10
0
V
CE
t
p
Semiconductor Group
4
Dec-02-1996
BUP 402
Typ. output characteristics
Typ. output characteristics
I
C
=
f
(V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 25 °C
40
I
C
=
f
(V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 125 °C
40
A
I
C
30
17V
15V
13V
11V
9V
7V
A
I
C
30
17V
15V
13V
11V
9V
7V
25
25
20
20
15
15
10
10
5
0
0
1
2
3
V
5
5
0
0
1
2
3
V
5
V
CE
V
CE
Typ. transfer characteristics
I
C
=
f
(V
GE
)
parameter:
t
p
= 80 µs,
V
CE
= 20 V
40
A
I
C
30
25
20
15
10
5
0
0
2
4
6
8
10
V
14
V
GE
Semiconductor Group
5
Dec-02-1996
