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BZD27C13P

Zener Diodes 13 Volt 0.8 Watt 5%

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
SMA, 2 PIN
Reach Compliance Code
not_compliant
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
10 Ω
最大正向电压 (VF)
1.2 V
JESD-30 代码
R-PDSO-F2
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-65 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
最大功率耗散
1 W
认证状态
Not Qualified
标称参考电压
13 V
最大反向电流
2 µA
反向测试电压
10 V
表面贴装
YES
技术
ZENER
端子面层
Matte Tin (Sn)
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
30
电压温度Coeff-Max
13 mV/°C
最大电压容差
4.61%
工作测试电流
50 mA
Base Number Matches
1
文档预览
BZD27C6V8P - BZD27C220P
Taiwan Semiconductor
1W, 6.8V - 220V Voltage Regulator Diode
FEATURES
Silicon zener diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
P
tot
T
J MAX
Package
Configuration
VALUE
6.8 - 220
1.0
175
Sub SMA
Single die
UNIT
V
W
°C
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
Case: Sub SMA
Molding compound meets UL 94 V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 19mg (approximately)
Sub SMA
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=0.2A
Power dissipation at T
L
=73°C
T
A
=25°C (Note 1)
Non-repetitive peak pulse power dissipation
100μs square pulse (Note 2)
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C6V8P to BZD27C100P)
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C110P to BZD27C220P)
Operating and storage temperature range
Notes:
1. Mounted on Cu-Pad size 5mm x 5mm
2. T
J
=25°C prior to surge
SYMBOL
V
F
P
tot
P
ZSM
P
RSM
P
RSM
T
J
,T
STG
VALUE
1.2
2.3
1.0
300
150
100
-55 to +175
UNIT
Volts
Watts
Watts
Watts
Watts
°C
1
Version:Z1706
BZD27C6V8P - BZD27C220P
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
LIMIT
44
88
48
UNIT
°C/W
°C/W
°C/W
Thermal Performance Note:
Units mounted on recommended PCB (5mm x 5mm Cu pad test board)
ORDERING INFORMATION
PART NO.
PARTNO.
SUFFIX
PACKING
CODE
RU
RV
RT
MT
RQ
BZD27CxxP
(Note 1)
MQ
H
R3
RF
R2
M2
RH
MH
G
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
PACKING CODE
SUFFIX
PACKAGE
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
PACKING
1,800 / 7" Plastic reel
(8mm tape)
3,000 / 7" Plastic reel
(8mm tape)
7,500 / 13" Paper reel
(8mm tape)
7,500 / 13" Plastic reel
(8mm tape)
10,000 / 13" Paper reel
(8mm tape)
10,000 / 13" Plastic reel
(8mm tape)
1,800 / 7" Plastic reel
(12mm tape)
3,000 / 7" Plastic reel
(12mm tape)
7,500 / 13" Paper reel
(12mm tape)
7,500 / 13" Plastic reel
(12mm tape)
10,000 / 13" Paper reel
(12mm tape)
10,000 / 13" Plastic reel
(12mm tape)
Note :
1. "xx" defines voltage from 6.8V (BZD27C6V8P) to 220V (BZD27C220P)
EXAMPLE
EXAMPLE P/N
BZD27C10PHRUG
PART NO.
BZD27C10P
PART NO.
SUFFIX
H
PACKING
CODE
RU
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:Z1706
BZD27C6V8P - BZD27C220P
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Working Voltage
(Note 1)
Part number
Marking
code
Min.
BZD27C6V8P
BZD27C7V5P
BZD27C8V2P
BZD27C9V1P
BZD27C10P
BZD27C11P
BZD27C12P
BZD27C13P
BZD27C15P
BZD27C16P
BZD27C18P
BZD27C20P
BZD27C22P
BZD27C24P
BZD27C27P
BZD27C30P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C51P
BZD27C56P
BZD27C62P
BZD27C68P
BZD27C75P
BZD27C82P
BZD27C91P
BZD27C100P
BZD27C110P
BZD27C120P
BZD27C130P
BZD27C150P
BZD27C160P
BZD27C180P
BZD27C200P
BZD27C220P
D7
D8
D9
E0
E1
E2
E3
E4
E5
E6
E7
E8
E9
F0
F1
F2
F3
F4
F5
F6
F7
F8
F9
G0
G1
G2
G3
G4
G5
G6
G7
G
G9
H0
H1
H2
H3
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
208
V
Z
@ I
ZT
V
Nom.
6.8
7.45
8.2
9.05
10
11
12.05
13.25
14.7
16.2
17.95
20
22.05
24.2
27
30
33
36
39
43
47
51
56
62
68
74.5
82
90.5
100
110
120.5
132.5
147
162
179.5
200
220.5
Max.
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
116
127
141
156
171
191
212
233
Typ.
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
60
60
60
80
150
150
150
150
280
350
430
Differential
Resistance
r
dif
@ I
Z
Max.
3
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
200
200
200
250
300
300
300
350
450
750
900
Max.
0
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
Temperature
Coefficient
ALPH
Z
@ I
Z
%/°C
Max.
0.07
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
100
100
100
50
50
50
50
50
25
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
Test
current
I
ZT
mA
Reverse Current@
Reverse Voltage
I
R
μA
Max.
10
50
10
10
7
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
3
3
3
5
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
V
R
V
Note 1: Pulse test: tp
≦5ms.
3
Version:Z1706
BZD27C6V8P - BZD27C220P
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 TYPICAL FORWARD CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT
(A)
TYP. JUNCTION CAPACITANCE (pF)
Fig.2 TYP. DIODE CAPACITANCE vs REVERSE
VOLTAGE
10000
1000
C6V8P
C12P
TYP. VF
1
MAX. VF
100
C27P
C200P
0.1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
FORWARD VOLTAGE (V)
REVERSE VOLTAGE
Fig.3 POWER DISSIPATION v.s TEMPERATURE
3
2.5
POWER DISSIPATION(W)
2
1.5
RthjA=88°C/W
1
0.5
0
25
50
75
100
125
150
175
Heat sink
5mm x 5mm
Cu pad test board
RthjL=44°C/W
TEMPERATURE (
°
C)
4
Version:Z1706
BZD27C6V8P - BZD27C220P
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
Sub SMA
DIM.
B
C
D
E
F
G
H
I
J
Unit (mm)
Min
1.70
2.70
0.16
1.23
0.80
3.40
2.45
0.35
0.00
Max
1.90
2.90
0.30
1.43
1.20
3.80
2.60
0.85
0.10
Unit (inch)
Min
0.067
0.106
0.006
0.048
0.031
0.134
0.096
0.014
0.000
Max
0.075
0.114
0.012
0.056
0.047
0.150
0.102
0.033
0.004
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.4
1.2
3.1
1.9
4.3
Unit (inch)
0.055
0.047
0.122
0.075
0.169
MARKING DIAGRAM
P/N
G
YW
F
= Marking Code
= Green compound Code
= Date Code
= Factory Code
5
Version:Z1706
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