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BZX55B75/TAP

DIODE 75 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, GLASS PACKAGE-2, Voltage Regulator Diode

器件类别:二极管    稳压二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:  

下载文档
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
零件包装代码
DO-35
包装说明
GLASS PACKAGE-2
针数
2
Reach Compliance Code
unknown
Is Samacsys
N
Base Number Matches
1
文档预览
BZX55-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2.5; 5
Pulse current
Single
UNIT
V
mA
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
BZX55-series
BZX55-series
ORDERING CODE
BZX55-series-TR
BZX55-series-TAP
TAPED UNITS PER REEL
10 000 per 13" reel
10 000 per ammopack
(52 mm tape)
MINIMUM ORDER QUANTITY
30 000/box
30 000/box
PACKAGE
PACKAGE NAME
DO-35
WEIGHT
125 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 200 mA
l = 4 mm, T
L
= constant
TEST CONDITION
l = 4 mm, T
L
= 25 °C
SYMBOL
P
tot
I
Z
R
thJA
T
j
T
stg
V
F
VALUE
500
P
tot
/V
Z
300
175
- 65 to + 175
1.5
UNIT
mW
mA
K/W
°C
°C
V
Rev. 1.7, 25-Nov-11
Document Number: 85604
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX55-Series
www.vishay.com
Vishay Semiconductors
TEST
CURRENT
I
ZT1
mA
MAX.
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
< 50
< 10
<4
<2
<2
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
I
ZT2
REVERSE LEAKAGE
CURRENT
I
R
at V
R
T
amb
= T
amb
=
25 °C 150 °C
μA
V
MAX.
< 85
< 85
< 85
< 85
< 85
< 85
< 75
< 60
< 35
< 25
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
TK
VZ
%/K
MAX.
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
MIN.
- 0.09
- 0.09
- 0.08
- 0.08
- 0.08
- 0.08
- 0.06
- 0.05
- 0.02
- 0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
MAX.
- 0.06
- 0.06
- 0.05
- 0.05
- 0.05
- 0.05
- 0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
TEMPERATURE
COEFFICIENT
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART NUMBER
V
Z
at I
ZT1
V
MIN.
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
BZX55C11
BZX55C12
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
BZX55C27
BZX55C30
BZX55C33
BZX55C36
BZX55C39
BZX55C43
BZX55C47
BZX55C51
BZX55C56
BZX55C62
BZX55C68
BZX55C75
2.28
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
NOM.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
f = 1 kHz
Rev. 1.7, 25-Nov-11
Document Number: 85604
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX55-Series
www.vishay.com
Vishay Semiconductors
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE LEAKAGE
CURRENT
I
R
at V
R
T
amb
=
25 °C
T
amb
=
150 °C
V
MAX.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
< 50
< 10
<4
<2
<2
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
TK
VZ
%/K
MAX.
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
MIN.
- 0.09
- 0.09
- 0.08
- 0.08
- 0.08
- 0.08
- 0.06
- 0.05
- 0.02
- 0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
MAX.
- 0.06
- 0.06
- 0.05
- 0.05
- 0.05
- 0.05
- 0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
TEMPERATURE
COEFFICIENT
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART NUMBER
V
Z
at I
ZT1
V
MIN.
BZX55B2V4
BZX55B2V7
BZX55B3V0
BZX55B3V3
BZX55B3V6
BZX55B3V9
BZX55B4V3
BZX55B4V7
BZX55B5V1
BZX55B5V6
BZX55B6V2
BZX55B6V8
BZX55B7V5
BZX55B8V2
BZX55B9V1
BZX55B10
BZX55B11
BZX55B12
BZX55B13
BZX55B15
BZX55B16
BZX55B18
BZX55B20
BZX55B22
BZX55B24
BZX55B27
BZX55B30
BZX55B33
BZX55B36
BZX55B39
BZX55B43
BZX55B47
BZX55B51
BZX55B56
BZX55B62
BZX55B68
BZX55B75
2.35
2.64
2.94
3.24
3.52
3.82
4.22
4.6
5
5.48
6.08
6.66
7.35
8.04
8.92
9.8
10.78
11.76
12.74
14.7
15.7
17.64
19.6
21.55
23.5
26.4
29.4
32.4
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73
NOM.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
MAX.
2.45
2.76
3.06
3.36
3.68
3.98
4.38
4.8
5.2
5.72
6.32
6.94
7.65
8.36
9.28
10.2
11.22
12.24
13.26
15.3
16.3
18.36
20.4
22.45
24.5
27.6
30.6
33.6
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
f = 1 kHz
μA
Rev. 1.7, 25-Nov-11
Document Number: 85604
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX55-Series
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
R
thJA
- Therm. Resist. Junction Ambient (K/W)
500
V
Ztn
- Relative Voltage Change
400
300
l
200
100
T
L
= constant
0
0
5
10
15
20
95 9611
95 9599
Vishay Semiconductors
1.3
V
Ztn
= V
Zt
/V
Z
(25 °C)
1.2
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
1.1
l
1.0
0.9
0
- 2 x 10
-4
/K
- 4 x 10
-4
/K
0.8
- 60
0
60
120
180
240
I - Lead Length (mm)
T
j
- Junction Temperature (°C)
Fig. 1 -
Thermal Resistance vs. Lead Length
Fig. 4 - Typical Change of Working Voltage vs.
Junction Temperature
P
tot
- Total Power Dissipation (mW)
600
500
400
300
200
100
0
0
80
120
160 200
40
T
amb
- Ambient Temperature (°C)
TK
VZ
- Temperature Coefficient
of
V
Z
(10
-4
/K)
15
10
5
I
Z
= 5 mA
0
-5
0
95 9600
10
20
30
40
50
95 9602
V
Z
- Z-Voltage (V)
Fig. 2 -
Total Power Dissipation vs. Ambient Temperature
Fig. 5 - Temperature Coefficient of V
Z
vs. Z-Voltage
1000
200
T
j
= 25 °C
100
C
D
- Diode Capacitance (pF)
V
Z
-
Voltage
Change (mV)
150
V
R
= 2
V
T
j
= 25 °C
100
I
Z
= 5 mA
10
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Fig. 3 -
Typical Change of Working Voltage under Operating
Conditions at T
amb
= 25 °C
Fig. 6 - Diode Capacitance vs. Z-Voltage
Rev. 1.7, 25-Nov-11
Document Number: 85604
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX55-Series
www.vishay.com
Vishay Semiconductors
50
P
tot
= 500 mW
T
amb
= 25 °C
100
I
F
- Forward Current (mA)
10
T
j
= 25 °C
40
1
I
Z
- Z-Current (mA)
1.0
30
0.1
20
0.01
10
0.001
0
95 9605
0
15
95 9607
0.2
0.4
0.6
0.8
20
25
30
35
V
F
- Forward
Voltage
(V)
V
Z
- Z-Voltage (V)
Fig. 9 -
Z-Current vs. Z-Voltage
Fig. 7 -
Forward Current vs. Forward Voltage
100
1000
80
r
Z
- Differential Z-Resistance (Ω)
I
Z
- Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
60
I
Z
= 1 mA
100
5 mA
10 10 mA
40
20
0
0
95 9604
1
4
6
8
12
20
95 9606
T
j
= 25 °C
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
Fig. 8 - Z-Current vs. Z-Voltage
Z
thp
- Thermal Resistance for Pulse Cond. (KW)
V
Z
- Z-Voltage (V)
Fig. 10 -
Differential Z-Resistance vs. Z-Voltage
1000
t
p
/T = 0.5
100
t
p
/T = 0.2
Single Pulse
R
thJA
= 300 K/W
T = T
jmax
- T
amb
t
p
/T = 0.01
t
p
/T = 0.1
t
p
/T = 0.02
i
ZM
= (-
V
Z
+ (V
Z2
+ 4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
t
p
/T = 0.05
10
1
10
-1
10
0
10
1
t
p
- Pulse Length (ms)
10
2
95 9603
Fig. 11 - Thermal Response
Rev. 1.7, 25-Nov-11
Document Number: 85604
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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