BZX55C2V4RL Series
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
This is a complete series of 500 mW Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead
hermetically sealed glass package that offers protection in all common
environmental conditions.
Specification Features:
http://onsemi.com
Cathode
Anode
•
Zener Voltage Range – 2.4 V to 33 V
•
ESD Rating of Class 3 (>16 KV) per Human Body Model
•
DO–204AH (DO–35) Package – Smaller than Conventional
DO–204AA Package
•
Double Slug Type Construction
•
Metallurgical Bonded Construction
Mechanical Characteristics:
CASE:
Double slug type, hermetically sealed glass
FINISH:
All external surfaces are corrosion resistant and leads are
AXIAL LEAD
CASE 299
GLASS
MARKING DIAGRAM
L
55C
xxx
YWW
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
(Note 1)
Rating
Max. Steady State Power Dissipation
@ T
L
≤
75°C, Lead Length = 3/8″
Derate above 75°C
Operating and Storage
Temperature Range
Symbol
P
D
Value
500
4.0
T
J
, T
stg
–65 to
+200
Unit
mW
mW/°C
°C
L
= Assembly Location
55Cxxx = Device Code
=
(See Table Next Page)
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
BZX55CxxxRL
BZX55CxxxRL2*
Package
Axial Lead
Axial Lead
Shipping
5000/Tape & Reel
5000/Tape & Reel
1. Some part number series have lower JEDEC registered ratings.
* The “2” suffix refers to 26 mm tape spacing.
©
Semiconductor Components Industries, LLC, 2002
1
March, 2002 – Rev. 0
Publication Order Number:
BZX55C2V4RL/D
BZX55C2V4RL Series
ELECTRICAL CHARACTERISTICS
(T
L
= 30°C unless
otherwise noted, V
F
= 1.5 V Max @ I
F
= 100 mA for all types)
Symbol
V
Z
I
ZT
Z
ZT
QV
BR
I
R
V
R
I
F
V
F
C
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Temperature Coefficient of V
BR
(Typical)
Reverse Leakage Current (T
A
= 25°C) @ V
R
Breakdown Voltage
Forward Current
Forward Voltage @ I
F
Capacitance (Typical)
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
http://onsemi.com
2
BZX55C2V4RL Series
ELECTRICAL CHARACTERISTICS
(T
L
= 30°C unless otherwise noted, V
F
= 1.3 V Max, I
F
= 100 mAdc for all types)
V
ZT
at I
ZT
(V)
Device
Marking
55C2V4
55C2V7
55C3V0
55C3V3
55C3V6
55C3V9
55C4V3
55C4V7
55C5V1
55C5V6
55C6V2
55C6V8
55C7V5
55C8V2
55C9V1
55C10
55C11
55C12
55C13
55C15
55C16
55C18
55C20
55C22
55C24
55C27
55C30
55C33
55C36
55C39
55C43
55C47
55C51
55C56
55C62
55C68
55C75
55C82
55C91
Min
(Note 2)
2.28
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
Max
(Note 2)
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.1
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
80
87
96
Max Zener
Impedance
(Note 4)
Z
ZT
@ I
ZT
(Ohms) Max
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
160
170
200
250
Max Reverse Leakage
Current I
R
at V
R
(mA)
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1
T
amb
255C
Max
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
T
amb
1255C
Max
100
50
40
40
40
40
20
10
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
5
5
5
10
10
10
10
10
10
10
V
R
(V)
1
1
1
1
1
1
1
1
1
1
2
3
5
6
7
7.5
8.5
9
10
11
12
14
15
17
18
20
22
24
27
28
32
35
38
42
47
51
56
62
69
I
ZM
(mA)
(Note 3)
155
135
125
115
105
95
90
85
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
14
13
12
11
10
9.2
8.5
7.8
7
6.4
5.9
5.3
4.8
4.3
Device
BZX55C2V4RL
BZX55C2V7RL
BZX55C3V0RL
BZX55C3V3RL
BZX55C3V6RL
BZX55C3V9RL
BZX55C4V3RL
BZX55C4V7RL
BZX55C5V1RL
BZX55C5V6RL
BZX55C6V2RL
BZX55C6V8RL
BZX55C7V5RL
BZX55C8V2RL
BZX55C9V1RL
BZX55C10RL
BZX55C11RL
BZX55C12RL
BZX55C13RL
BZX55C15RL
BZX55C16RL
BZX55C18RL
BZX55C20RL
BZX55C22RL
BZX55C24RL
BZX55C27RL
BZX55C30RL
BZX55C33RL
BZX55C36RL
BZX55C39RL
BZX55C43RL
BZX55C47RL
BZX55C51RL
BZX55C56RL
BZX55C62RL
BZX55C68RL
BZX55C75RL
BZX55C82RL
BZX55C91RL
2.
TOLERANCE AND VOLTAGE DESIGNATION
Tolerance designation – the type numbers listed have zener voltage min/max limits as shown. Device tolerance of
±2%
are indicated by a
“B” instead of a “C”. Zener voltage is measured with the device junction in thermal equilibrium at the lead temperature of 30°C
±1°C
and 3/8″
lead length.
3. This data was calculated using nominal voltages. The maximum current handling capability on a worst case basis is limited by the actual
zener voltage at the operating point and the powered derating curve.
4. Z
ZT
and Z
ZK
are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I
Z(ac)
=
0.1 I
Z(dc)
with the ac frequency = 1.0 kHz.
http://onsemi.com
3
BZX55C2V4RL Series
0.7
P
D
, STEADY STATE
POWER DISSIPATION (WATTS)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
180
200
HEAT
SINKS
3/8"
3/8"
T
L
, LEAD TEMPERATURE (°C)
Figure 1. Steady State Power Derating
http://onsemi.com
4
BZX55C2V4RL Series
θ
JL , JUNCTION TO LEAD THERMAL RESISTANCE (
°
C/W)
APPLICATION NOTE — ZENER VOLTAGE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
θ
LA
P
D
+ T
A
.
500
400
L
L
300
200
100
0
2.4-60 V
62-200 V
θ
LA
is the lead-to-ambient thermal resistance (°C/W) and P
D
is the power dissipation. The value for
θ
LA
will vary and
depends on the device mounting method.
θ
LA
is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
J
= T
L
+
∆T
JL
.
0
0.2
0.4
0.6
0.8
1
L, LEAD LENGTH TO HEAT SINK (INCH)
Figure 2. Typical Thermal Resistance
1000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
3
4
5
6
7
8
9
10
11
12
13
14
15
+25°C
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
∆T
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
∆T
JL
=
θ
JL
P
D
.
I R , LEAKAGE CURRENT (
µ
A)
For worst-case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(∆T
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
∆V
=
θ
VZ
T
J
.
θ
VZ
, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
+125°C
V
Z
, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current
http://onsemi.com
5
