C3D02065E
®
Silicon Carbide Schottky Diode
V
RRM
=
650 V
Z-R
ec
R
ectifieR
Features
I
F
(
T
C
=135˚C)
= 4 A
Q
c
=
4.8 nC
Package
•
•
•
•
•
•
•
•
650-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on V
F
TO-252-2
Benefits
•
•
•
•
•
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
PIN 2
CASE
Applications
Part Number
C3D02065E
Package
TO-252-2
Marking
C3D02065
•
•
Switch Mode Power Supplies
Power Factor Correction
- Typical PFC P
out
: 300W-450W
Maximum Ratings
Symbol Parameter
V
RRM
V
RSM
V
DC
I
F
I
FRM
I
FSM
I
FSM
P
tot
T
J
, T
stg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Value
650
650
650
Unit
V
V
V
Test Conditions
Note
Continuous Forward Current
8
4
2
12
9
21
19
65
39.5
17
-55 to
+175
A
T
C
=25˚C
T
C
=135˚C
T
C
=162˚C
T
C
=25˚C, t
P
=10 mS, Half Sine Wave D=0.3
T
C
=110˚C, t
P
=10 mS, Half Sine Wave D=0.3
T
C
=25˚C, t
P
=10 mS, Half Sine Wave D=0.3
T
C
=110˚C, t
P
=10 mS, Half Sine Wave D=0.3
T
C
=25˚C, t
P
=10 µS, Pulse
T
C
=25˚C
T
C
=110˚C
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
A
A
A
W
˚C
1
C3D02065E Rev. -
Electrical Characteristics
Symbol
V
F
I
R
Q
C
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Typ.
1.5
1.8
10
20
4.8
120
12
11
Max.
1.8
2.4
50
100
Unit
V
μA
nC
Test Conditions
I
F
= 2 A T
J
=25°C
I
F
= 2 A T
J
=175°C
V
R
= 650 V T
J
=25°C
V
R
= 650 V T
J
=175°C
V
R
= 650 V, I
F
= 2A
di/dt = 500 A/μs
T
J
= 25°C
V
R
= 0 V, T
J
= 25°C, f = 1 MHz
V
R
= 200 V, T
J
= 25˚C, f = 1 MHz
V
R
= 400 V, T
J
= 25˚C, f = 1 MHz
Note
C
Total Capacitance
pF
Note:
1.
This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
R
θJC
Parameter
TO-252 Package Thermal Resistance from Junction to Case
Typ.
3.8
Unit
°C/W
Typical Performance
4.0
4.0
3.5
3.5
3.0
3.0
1.0E-05
10
T
J
= 25°C
T
J
= 75°C
T
J
= 125°C
T
J
= 175°C
8
8.0E-06
I
F
Forward Current (A)
Forward Current
2.5
2.5
2.0
2.0
1.5
1.5
1.0
1.0
I
R
Reverse Current (
μ
A)
Reverse Current (A)
6
6.0E-06
Current 25C
Current 25C
Current 75C
T
J
= 25°C
T
J
= 75°C
T
J
= 175°
Current 75C
4
Current 125C
4.0E-06
Current 125C
Current 175C
Current 175C
2
2.0E-06
0.5
0.5
0
0.0
T
J
= 125°C
0.0
0.0
0.5
0.5
1.0
1.5
2.0
V
F
Forward Voltage (V)
Forward Voltage
1.0
1.5 2.0 2.5 3.0
0
0.0E+00
2.5
3.0
0 100 200 300 400 500 600 700 800
0
100
200
300
400
500
600
V
R
Reverse Voltage (V)
Reverse Bias (V)
700
800
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2
C3D02065E Rev. -
Typical Performance
C3D02060A Current Derating
20
20
18
18
250
60
60
D3_2A_FP
I
F(PEAK)
Peak Forward Current (A)
16
16
14
14
12
12
10
10
8
8
6
6
4
4
2
2
IF(PEAK) Peak Forward Current (A)
C Capacitance (pF)
C
C Capacitance
Capacitance (pF)
20% Duty*
30% Duty*
50% Duty*
70% Duty*
DC
200
50
50
(pF)
40
40
150
30
30
D3_2A_FP
100
20
20
10
10
50
0
0
25
25
50 75 100 125 150 175
50
75
100
125
150
175
0
0
0
T
C
Case Temperature (°C)
TC Case Temperature (˚C)
1
1
1
10 100 1000
10
100
1000
10
100
1000
V
R
Reverse
Voltage (V)
(V)
V
R
V
R
Reverse
Voltage
Reverse
Voltage (V)
Figure 3. Current Derating
Figure 4. Capacitance vs. Reverse Voltage
Zth (°C/W)
Time (s)
Figure 5. Transient Thermal Impedance
3
C3D02065E Rev. -
Typical Performance
40.0
40
35.0
35
Power Dissipation (W)
30
30.0
25.0
25
20.0
20
15.0
15
10.0
10
5.0
5
0.0
0
25
50
75
100
125
150
175
25 50 75 100 125 150 175
T
Temperature
(°C)
c
Case Temperature
T Case
(°C)
C
Power Dissipation (W)
Figure 6. Power Derating
Package Dimensions
Package TO-252-2
POS
A
B
C
D*
E
F
G
H
Inches
Min
.250
.197
.027
.270
.178
.025
44˚
.380
6˚
.086
.018
.035
.231
0.00
.017
.038
.021
Max
.289
.215
.050
.322
.182
.045
46˚
.410
8˚
.094
.034
.050
.246
.005
.023
.045
.029
Millimeters
Min
6.350
5.004
.686
6.858
4.521
.635
44˚
9.652
6˚
2.184
.457
.889
5.867
0.00
.432
.965
.533
Max
7.341
5.461
1.270
8.179
4.623
1.143
46˚
10.414
8˚
2.388
.864
1.270
6.248
.127
.584
1.143
.737
*
J
K
L
M
N
P
Q
R
S
T
U
.090 TYP
2.286 TYP
R0.010 TYP
R0.254 TYP
Note:
* Tab “D” may not be present
4
C3D02065E Rev. -
Recommended Solder Pad Layout
.
08
TO-252-2
Part Number
C3D02065E
Package
TO-252-2
Marking
C3D02065
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
Diode Model
Diode Model CSD10060
Vf
V
V
T
If*R
Vf
T
T
=
=
T
+
+If*R
T
T
V
T
= 0.98+(T
J
-1.35*10
-3
)
-3
)
V
T=
0.92 + (T
j
*
* -1.7*10
R
T
= 0.21+(T
J
* 1.71*10
-3
)
R 0.052 + (T * 0.29*10
-3
)
T=
j
Note: T
j
= Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
V
T
R
T
5
C3D02065E Rev. -
单片机
