RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4
厂商官网:http://www.macom.com
下载文档型号 | CFA0103-L2 | CFA0103-L1 | CFA0103-L | CFA0103-L3 |
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描述 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4 | Transistor, | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4 |
包装说明 | DISK BUTTON, O-CRDB-F4 | DISK BUTTON, O-CRDB-F4 | , | DISK BUTTON, O-CRDB-F4 |
Reach Compliance Code | unknown | unknown | unknow | unknow |
厂商名称 | Mimix Broadband (MACOM) | - | Mimix Broadband (MACOM) | Mimix Broadband (MACOM) |
针数 | 4 | 4 | - | 4 |
其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | - | HIGH RELIABILITY |
外壳连接 | SOURCE | SOURCE | - | SOURCE |
配置 | SINGLE | SINGLE | - | SINGLE |
最小漏源击穿电压 | 8 V | 8 V | - | 8 V |
FET 技术 | HIGH ELECTRON MOBILITY | HIGH ELECTRON MOBILITY | - | HIGH ELECTRON MOBILITY |
最高频带 | KU BAND | KU BAND | - | KU BAND |
JESD-30 代码 | O-CRDB-F4 | O-CRDB-F4 | - | O-CRDB-F4 |
元件数量 | 1 | 1 | - | 1 |
端子数量 | 4 | 4 | - | 4 |
工作模式 | DEPLETION MODE | DEPLETION MODE | - | DEPLETION MODE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | - | CERAMIC, METAL-SEALED COFIRED |
封装形状 | ROUND | ROUND | - | ROUND |
封装形式 | DISK BUTTON | DISK BUTTON | - | DISK BUTTON |
极性/信道类型 | N-CHANNEL | N-CHANNEL | - | N-CHANNEL |
最小功率增益 (Gp) | 10 dB | 10 dB | - | 8 dB |
认证状态 | Not Qualified | Not Qualified | - | Not Qualified |
表面贴装 | YES | YES | - | YES |
端子形式 | FLAT | FLAT | - | FLAT |
端子位置 | RADIAL | RADIAL | - | RADIAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | - | AMPLIFIER |
晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | - | GALLIUM ARSENIDE |