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CFA0103-L2

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4

器件类别:分立半导体    晶体管   

厂商名称:Mimix Broadband (MACOM)

厂商官网:http://www.macom.com

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器件参数
参数名称
属性值
厂商名称
Mimix Broadband (MACOM)
包装说明
DISK BUTTON, O-CRDB-F4
针数
4
Reach Compliance Code
unknown
其他特性
HIGH RELIABILITY
外壳连接
SOURCE
配置
SINGLE
最小漏源击穿电压
8 V
FET 技术
HIGH ELECTRON MOBILITY
最高频带
KU BAND
JESD-30 代码
O-CRDB-F4
元件数量
1
端子数量
4
工作模式
DEPLETION MODE
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
ROUND
封装形式
DISK BUTTON
极性/信道类型
N-CHANNEL
最小功率增益 (Gp)
10 dB
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
RADIAL
晶体管应用
AMPLIFIER
晶体管元件材料
GALLIUM ARSENIDE
文档预览
Low Noise GaAs FETs
July 2006 - Rev 31-Jul-06
Features
High Gain
Super Low Noise
Pseudomorphic HEMT
70 Mil Hermetic Package
CFA0103
Applications
Satellite Receivers
Point-to-Point Radio Receivers
Commercial Communications
Defense Electronics
General Description
The CFA0103-L series is a family of low noise, high-gain FETs intended for satellite and point-to-point radio receiver
applications. This family of devices is assembled in an industry standard 70 mil hermetic package. This family of high
reliability devices is ideally suited for operation-critical applications where reliability and performance are required.
Typical Noise Parameters
(Vds = 3V, Ids = 15 mA)
Freq
(GHz)
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
NF
opt
0.39
0.47
0.57
0.69
0.84
1.00
1.18
1.38
1.60
G
A
Gamma Opt Rn/50
(dB) Mag Ang
0.42
23.6 0.87
36
0.34
18.3 0.77
71
0.27
15.2 0.69 100
0.22
13.0 0.63 124
0.18
11.5 0.58 147
0.16
10.6 0.53 171
0.15
10.1 0.49 -163
0.16
9.9
0.46 -132
0.18
9.8
0.42
-94
Absolute Maximum Ratings
Drain-Source Voltage (Vds)
Gate-Source Voltage (Vgs)
Drain Current (Ids)
Continuous Dissipation (Pt)
RF Power In (Pin)
Channel Temperature (Tch)
Storage Temperature (Tstg)
8V
-5 V
Idss
800 mW
+17 dBm
175 ºC
-65 ºC to +175 ºC
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Bias
Parameter
NFopt
Ga
IS211
2
P1dB
gm
Idss
Vp
BVgd
Rth
Vds (V)
3.0
3.0
3.0
6.0
Vds = 3.0V
Vds = 3.0V
Vds = 3.0V
Igd = 100 uA
Ids (mA)
15.0
15.0
15.0
40.0
Vgs = V
Vgs = 0V
Ids = 1 mA
Frequency
(GHz)
12.0
12.0
2.0
10.0
18.0
12.0
Units
dB
dB
dB
dB
dB
dBm
mS
mA
Volts
Volts
ºC/W
Grade
L1
L2
L3
L1
L2
L3
Min
-
-
-
10.0
10.0
8.0
Typ
0.7
0.9
0.9
11.0
11.0
9.0
13.0
9.6
7.2
19.0
90.0
60.0
-1.3
-8.0
250
Max
0.8
1.0
1.2
-
-
-
30.0
-0.5
-5.5
120.0
-2.5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 2
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Low Noise GaAs FETs
July 2006 - Rev 31-Jul-06
Typical Performance (TA = 25ºC)
CFA0103
Typical Scattering Parameters (TA = 25ºC,Vds = 3V, Ids = 15mA)
Frequency
S11
(GHz)
(Mag) (Ang)
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
0.97
0.88
0.79
0.66
0.59
0.57
0.57
0.57
0.51
-32
-69
-96
-129
-170
162
123
104
80
S21
(dB) (Mag) (Ang)
13.5
11.9
10.7
10.6
9.6
9.0
8.5
7.7
7.2
4.73
3.94
3.43
3.39
3.02
2.82
2.66
2.43
2.29
149
113
84
55
22
-4
-35
-66
-100
S12
(dB) (Mag) (Ang)
-31.1
-25.8
-23.6
-21.4
-21.6
-21.0
-21.0
-20.9
-21.3
0.03
0.05
0.07
0.08
0.09
0.08
0.09
0.09
0.09
69
45
27
10
-13
-21
-40
-56
-79
S22
MSG
(Mag) (Ang) (dB)
0.56
0.55
0.54
0.46
0.36
0.42
0.35
0.47
0.59
-22
-50
-70
-84
-121
-138
-166
151
128
22.3
18.9
17.1
16.3
15.5
15.3
14.8
14.3
14.3
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 2
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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参数对比
与CFA0103-L2相近的元器件有:CFA0103-L1、CFA0103-L、CFA0103-L3。描述及对比如下:
型号 CFA0103-L2 CFA0103-L1 CFA0103-L CFA0103-L3
描述 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4 Transistor, RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4
包装说明 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4 , DISK BUTTON, O-CRDB-F4
Reach Compliance Code unknown unknown unknow unknow
厂商名称 Mimix Broadband (MACOM) - Mimix Broadband (MACOM) Mimix Broadband (MACOM)
针数 4 4 - 4
其他特性 HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY
外壳连接 SOURCE SOURCE - SOURCE
配置 SINGLE SINGLE - SINGLE
最小漏源击穿电压 8 V 8 V - 8 V
FET 技术 HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY - HIGH ELECTRON MOBILITY
最高频带 KU BAND KU BAND - KU BAND
JESD-30 代码 O-CRDB-F4 O-CRDB-F4 - O-CRDB-F4
元件数量 1 1 - 1
端子数量 4 4 - 4
工作模式 DEPLETION MODE DEPLETION MODE - DEPLETION MODE
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED
封装形状 ROUND ROUND - ROUND
封装形式 DISK BUTTON DISK BUTTON - DISK BUTTON
极性/信道类型 N-CHANNEL N-CHANNEL - N-CHANNEL
最小功率增益 (Gp) 10 dB 10 dB - 8 dB
认证状态 Not Qualified Not Qualified - Not Qualified
表面贴装 YES YES - YES
端子形式 FLAT FLAT - FLAT
端子位置 RADIAL RADIAL - RADIAL
晶体管应用 AMPLIFIER AMPLIFIER - AMPLIFIER
晶体管元件材料 GALLIUM ARSENIDE GALLIUM ARSENIDE - GALLIUM ARSENIDE
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