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CFD1275Q

Transistor

器件类别:分立半导体    晶体管   

厂商名称:CDIL[Continental Device India Pvt. Ltd.]

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器件参数
参数名称
属性值
厂商名称
CDIL[Continental Device India Pvt. Ltd.]
包装说明
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
最大集电极电流 (IC)
2 A
集电极-发射极最大电压
60 V
配置
DARLINGTON
最小直流电流增益 (hFE)
2000
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
功耗环境最大值
2 W
最大功率耗散 (Abs)
35 W
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管元件材料
SILICON
VCEsat-Max
2.5 V
文档预览
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR DALINGTON POWER TRANSISTORS
CFD1275, CFD1275A
TO-220FP Fully Isolated
Plastic Package
Complementary CFB949, CFB949A
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage (for 1sec, R.H.
<30%, T
a
= 25
o
C)
Collector Current Peak
Collector Current
Collector Power Dissipation @T
c
=25
o
C
@T
a
=25
o
C
Junction Temperature
Storage Temperature Range
T
j
T
stg
SYMBOL
V
CBO
V
CEO
V
EBO
** V
ISOL
(a)
(b)
I
CP
I
C
P
C
CFD1275
60
60
5
3500
1500
4
2
35
2
150
- 55 to +150
CFD1275A
80
80
UNIT
V
V
V
V
RMS
V
RMS
A
A
W
W
ºC
ºC
** RMS Isolation Voltage: (a) 3500 V
RMS
with Package in Clip Mounting Position (b) 1500 V
RMS
with Package
in Screw Mounting Position (for 1sec, R.H.<30%, T
a
=25
o
C; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)
µ
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
I
CBO
V
CB
=60V, I
E
=0,
CFD1275
Collector Cut Off Current
V
CB
=80V, I
E
=0,
CFD1275A
I
CEO
V
CE
=30V, I
B
=0,
CFD1275
Collector Cut Off Current
V
CE
=40V, I
B
=0,
CFD1275A
I
EBO
V
EB
=5V, I
C
=0
Emitter Cut Off Current
Collector Emitter Voltage
V
CEO
I
C
=30mA, I
B
=0
CFD1275
CFD1275A
V
CE
=4V, I
C
=1A
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=8mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B1
= - I
B2
=8mA
0.5
4.0
1.0
Q : 2000 - 5000
P : 4000 - 10000
60
80
1000
1000
V
V
10000
2.5
2.8
MIN
TYP MAX
1.0
1.0
2.0
2.0
2.0
UNIT
mA
mA
mA
mA
mA
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Turn On Time
Storage Time
Fall Time
*h
FE
Classification
Continental Device India Limited
h
FE
*h
FE
V
CE(sat)
V
BE
t
on
t
stg
t
r
R : 1000 - 2500
V
V
µs
µs
µs
Data Sheet
Page 1 of 3
CFD1275, CFD1275A
TO-220FP Fully Isolated
Plastic Package
TO-220FP Fully Isolated Plastic Package
A
D
C
DIM
A
E
B
C
F
D
E
F
K
G
H
J
K
L
J
J
G
L
MIN
9.96
2.60
4.50
3.10
7.90
16.87
0.45
2.56
2.34
MAX
10.36
3.00
4.90
3.30
8.20
17.27
0.50
2.96
2.74
3.08
30.05
1
2
3
Pin Configuration
1. Base
2. Collector
3. Emitter
1
2
3
M
M
0.80
All diminsions in mm.
TO-220 FP Tube Packing
Label
536.00
±1.5
End Pin
13.74
DEVICE NAME
Sr.
QTY.
A ll Dimensions in mm
50 Pcs./Tube
AMMO PACK SIZE
6.87
Tube Thickness
Label
92.0
538
.00
75.0
20 Tubes/Ammo Pack
1000 Pcs./Ammo Pack
Packing Detail
PACKAGE
Details
TO-220FP
50 pcs/
tube
Continental Device India Limited
STANDARD PACK
Net Weight/ t
Qy
135 gm/ pcs
50
Size
INNER CARTON BOX
Qty
1K
1K
Size
OUTER CARTON BOX
Qty
16K
10K
Gr Wt
36 kgs
28 kgs
200 pcs/
polybag 396 gm/
200 pcs
3" x 7.5" x 7.5"
3.5" x 3.7" x 21.5"
17" x 15" x 13.5"
19" x 19" x 19"
Data Sheet
32.85
Page 2 of 3
Notes
CFD1275, CFD1275A
TO-220FP Fully Isolated
Plastic Package
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and
on the CDIL Web Site/CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for
inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or
use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not
designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual
Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or
applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
CFD1275_1275ARev190302E
Continental Device India Limited
Data Sheet
Page 3 of 3
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参数对比
与CFD1275Q相近的元器件有:CFD1275AP、CFD1275AQ、CFD1275P。描述及对比如下:
型号 CFD1275Q CFD1275AP CFD1275AQ CFD1275P
描述 Transistor Transistor Transistor Transistor
厂商名称 CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.]
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant compliant compliant compli
最大集电极电流 (IC) 2 A 2 A 2 A 2 A
集电极-发射极最大电压 60 V 80 V 80 V 60 V
配置 DARLINGTON DARLINGTON DARLINGTON DARLINGTON
最小直流电流增益 (hFE) 2000 4000 2000 4000
JEDEC-95代码 TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 NPN NPN NPN NPN
功耗环境最大值 2 W 2 W 2 W 2 W
最大功率耗散 (Abs) 35 W 35 W 35 W 35 W
表面贴装 NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE
晶体管元件材料 SILICON SILICON SILICON SILICON
VCEsat-Max 2.5 V 2.5 V 2.5 V 2.5 V
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