CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
CHT2222VGP
CURRENT 0.6 Ampere
FEATURE
* High current (Max.=600mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
* High saturation current capability.
* Voltage controlled small signal switch.
0.9~1.1
SOT-563
(1)
(5)
0.50
0.50
(4)
1.5~1.7
CONSTRUCTION
* Two NPN transistors in one package.
0.15~0.3
(3)
1.1~1.3
MARKING
* V5
0.5~0.6
0.09~0.18
C1
B2
5
E2
4
CIRCUIT
6
1.5~1.7
TR2
TR1
1
E1
2
B1
3
C2
Dimensions in millimeters
SOT-563
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
75
40
6
600
800
200
150
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
2004-07
UNIT
RATING CHARACTERISTIC CURVES ( CHT2222VGP )
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 60 V
I
C
= 0; V
CB
= 60 V; Tj = 125 C
O
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
UNIT
K/W
MIN.
−
−
−
35
50
75
100
50
40
−
−
0.6
−
−
−
300
−
MAX.
10
10
10
−
−
−
−
300
−
−
300
1
1.2
2.0
8
25
−
4
UNIT
nA
uA
nA
I
C
= 0; V
EB
= 5 V
I
C
= 0.1 mA; V
CE
= 10V; note 1
I
C
= 1.0 mA; V
CE
= 10V
I
C
= 10 mA; V
CE
= 10V
I
C
= 150 mA; V
CE
= 10V
I
C
= 150 mA; V
CE
= 1.0V
I
C
= 500 mA; V
CE
= 10V
I
C
= 10 mA; V
CE
= 10V;Tamb = -55
O
C 35
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
BE
= 500 mV;
f = 1 MHz
I
C
= 20 mA; V
CE
= 20 V;
f = 100 MHz
I
C
= 100
µA;
V
CE
= 5 V; R
S
= 1 kΩ;
f = 1.0 kHz
mV
V
V
V
pF
pF
MHz
dB
Switching times (between 10% and 90% levels);
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
−15
mA
−
−
−
−
−
−
35
15
20
250
200
60
ns
ns
ns
ns
ns
ns
RATING CHARACTERISTIC CURVES ( CHT2222VGP )
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
= 10
0.3
400
300
200
25 °C
125 °C
0.2
25 °C
125 °C
100
- 40 °C
0.1
- 40 °C
0
0.1
0.3
1
3
10
30
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
V
BE(ON)
- BASE-EMITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
= 10
- 40 °C
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
0.8
- 40 °C
25 °C
0.8
25 °C
125 °C
0.6
125 °C
0.6
0.4
0.4
1
I
C
10
100
- COLLECTOR CURRENT (mA)
500
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
500
100
10
1
0.1
V
CB
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20
CAPACITANCE (pF)
16
12
C te
= 40V
f = 1 MHz
8
C ob
4
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
RATING CHARACTERISTIC CURVES ( CHT2222VGP )
Turn On and Turn Off Times
vs Collector Current
400
I
B1
= I
B2
=
I
c
10
Switching Times
vs Collector Current
400
I
B1
= I
B2
=
320
V cc = 25 V
I
c
10
320
V cc = 25 V
TIME (nS)
240
160
t off
TIME (nS)
240
160
80
0
10
tf
td
ts
tr
80
t on
0
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
100
I
C
- COLLECTOR CURRENT (mA)
1000
Power Dissipation vs
Ambient Temperature
1
P
D
- POWER DISSIPATION (W)
0.75
0.5
0.25
0
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
RATING CHARACTERISTIC CURVES ( CHT2222VGP )
CHAR. RELATIVE TO VALUES AT I
C
= 10mA
CHAR. RELATIVE TO VALUES AT T
A
= 25
o
C
Common Emitter Characteristics
8
V
CE
= 10 V
T
A
= 25
o
C
Common Emitter Characteristics
2.4
2
1.6
1.2
0.8
0.4
0
V
CE
= 10 V
I
C
= 10 mA
h
re
h
ie
h
fe
h
oe
6
h
oe
4
h
re
2
h
fe
h
ie
0
0
10
20
30
40
50
I
C
- COLLECTOR CURRENT (mA)
60
0
20
40
60
80
T
A
- AMBIENT TEMPERATURE (
o
C)
100
CHAR. RELATIVE TO VALUES AT V
CE
= 10V
Common Emitter Characteristics
1.3
1.25
1.2
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0
5
h
oe
10
15
20
25
30
V
CE
- COLLECTOR VOLTAGE (V)
35
h
re
h
ie
I
C
= 10 mA
T
A
= 25
o
C
h
fe
