MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HG-66H
●
I
C ...............................................................
1200 A
●
V
CES ......................................................
3300 V
●
High Insulated Type
●
1-element in a Pack
●
AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
190
±0.5
57
±0.25
57
±0.25
57
±0.25
5-M8 NUTS
17
±0.1
(6)
C
C
124
±0.25
140
±0.5
44
±0.3
(4)
C
(2)
C
6
4
2
5
3
1
G
E
E
(5)
E
(3)
E
(1)
E
G
C
9
±0.1
CIRCUIT DIAGRAM
3-M4 NUTS
14
±0.3
61.2
±0.5
screwing depth
min. 7.7
59.2
±0.5
61.2
±0.5
12
±0.3
8-φ7 MOUNTING HOLES
screwing depth
min. 16.5
18
±0.3
41
±0.5
22
±0.3
+1.0
0
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1
40.4
±0.3
5
±0.15
LABEL
38
+1.0
0
48
May 2009
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
V
iso
V
e
T
j
T
op
T
stg
t
psc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Conditions
V
GE
= 0V, T
j
= 25°C
V
CE
= 0V, T
j
= 25°C
DC, T
c
= 80°C
Pulse
DC
Pulse
T
c
= 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, Q
PD
≤
10 pC
Ratings
3300
±
20
1200
2400
1200
2400
13800
10200
5100
–40 ~ +150
–40 ~ +125
–40 ~ +125
10
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
µs
(Note 1)
(Note 1)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width V
CC
= 2200V, V
CE
≤
V
CES
, V
GE
= 15V, T
j
= 125°C
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
V
GE(th)
I
GES
C
ies
C
oes
C
res
Q
g
V
CE(sat)
t
d(on)
t
r
E
on(10%)
t
d(off)
t
f
E
off(10%)
V
EC
t
rr
Q
rr
E
rec(10%)
Item
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation
voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
(Note 5)
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 5)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2), (Note 5)
V
CE
= V
CES
, V
GE
= 0V
V
CE
= 10 V, I
C
= 120 mA, T
j
= 25°C
V
GE
= V
GES
, V
CE
= 0V, T
j
= 25°C
V
CE
= 10 V, V
GE
= 0 V, f = 100 kHz, T
j
= 25°C
V
CC
= 1650 V, I
C
= 1200 A, V
GE
=
±15
V, T
j
= 25°C
I
C
= 1200 A
(Note 4) T
j
= 25°C
V
GE
= 15 V
T
j
= 125°C
V
CC
= 1650 V, I
C
= 1200 A, V
GE
=
±15
V
R
G
= 1.6
Ω,
T
j
= 125°C, L
s
= 100 nH
Inductive load
V
CC
= 1650 V, I
C
= 1200 A, V
GE
=
±15
V
R
G
= 1.6
Ω,
T
j
= 125°C, L
s
= 100 nH
Inductive load
I
E
= 1200 A
V
GE
= 0 V
(Note 4)
T
j
= 25°C
T
j
= 125°C
Conditions
T
j
= 25°C
T
j
= 125°C
Min
—
—
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
CC
= 1650 V, I
E
= 1200 A, V
GE
=
±15
V
R
G
= 1.6
Ω,
T
j
= 125°C, L
s
= 100 nH
Inductive load
—
—
Limits
Typ
—
24
6.0
—
180
18
5.4
15
3.30
3.60
—
—
1.60
—
—
1.55
2.80
2.70
—
800
0.90
Max
15
60
7.0
0.5
—
—
—
—
—
—
1.60
1.00
—
2.50
1.00
—
—
—
1.40
—
—
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J/P
µs
µs
J/P
V
µs
µC
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
2
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
Item
Thermal resistance
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin,
λ
grease
= 1W/m·K, D(c-f) = 100
µm
Min
—
—
—
Limits
Typ
—
—
6.0
Max
9.0
17.5
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
M
t
m
CTI
d
a
d
s
L
P CE
R
CC’+EE’
Item
Conditions
M8: Main terminals screw
M6: Mounting screw
M4: Auxiliary terminals screw
Min
7.0
3.0
1.0
—
600
26
56
—
—
Limits
Typ
—
—
—
1.35
—
—
—
17
0.14
Max
15.0
6.0
3.0
—
—
—
—
—
—
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Internal inductance
Internal lead resistance
T
c
= 25°C
Note 1. Pulse width and repetition rate should be such that junction temperature (T
j
) does not exceed T
opmax
rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
j
) should not exceed T
jmax
rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E
on(10%)
/ E
off(10%)
/ E
rec(10%)
are the integral of
0.1V
CE
x 0.1I
C
x dt.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
3
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2400
T
j
= 125°C
2000
COLLECTOR CURRENT (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
2400
V
CE
= 20V
V
GE
= 20V
V
GE
= 15V
COLLECTOR CURRENT (A)
2000
1600
V
GE
= 12V
V
GE
= 10V
1600
1200
V
GE
= 8V
800
1200
800
400
400
T
j
= 25°C
T
j
= 125°C
0
0
1
2
3
4
5
6
0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
2400
V
GE
= 15V
2000
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
2400
2000
1600
1600
1200
1200
800
800
400
T
j
= 25°C
T
j
= 125°C
0
0
1
2
3
4
5
6
400
T
j
= 25°C
T
j
= 125°C
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
4
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10
3
7
5
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
V
CE
= 1650V, I
C
= 1200A
T
j
= 25°C
15
3
2
GATE-EMITTER VOLTAGE (V)
C
ies
10
CAPACITANCE (nF)
10
2
7
5
3
2
5
0
10
1
7
5
3
2
C
oes
-5
C
res
V
GE
= 0V, T
j
= 25°C
f = 100kHz
2 3
5 7
10
0
2 3
5 7
10
1
2 3
5 7
10
2
-10
10
0 -1
10
-15
0
5000
10000
15000
20000
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (
µC
)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
3
V
CC
= 1650V, V
GE
=
±15V
R
G
= 1.6Ω, T
j
= 125°C
Inductive load
E
on
5
6
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
V
CC
= 1650V, I
C
= 1200A
V
GE
=
±15V,
T
j
= 125°C
Inductive load
2.5
E
on
SWITCHING ENERGIES (J/P)
2
SWITCHING ENERGIES (J/P)
E
off
4
1.5
3
E
off
2
1
E
rec
0.5
1
E
rec
0
0
400
800
1200
1600
2000
2400
0
0
5
10
15
20
COLLECTOR CURRENT (A)
GATE RESISTOR (
Ω
)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
5
