PROCESS
Small Signal Transistor
NPN - High Voltage Transistor Chip
CP316
Central
TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GROSS DIE PER 4 INCH WAFER
29,250
PRINCIPAL DEVICE TYPES
CMPT5551
CXT5551
CZT5551
2N5551
EPITAXIAL PLANAR
20 x 20 MILS
9.0 MILS
4.0 x 4.0 MILS
4.7 x 4.7 MILS
Al - 30,000Å
Au - 18,000Å
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
Central
TM
PROCESS
CP316
Semiconductor Corp.
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)