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CPH3144

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

器件类别:分立半导体    晶体管   

厂商名称:SANYO

厂商官网:http://www.semic.sanyo.co.jp/english/index-e.html

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器件参数
参数名称
属性值
厂商名称
SANYO
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
最大集电极电流 (IC)
2 A
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
200
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
PNP
最大功率耗散 (Abs)
0.9 W
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
440 MHz
文档预览
Ordering number : ENN8165
CPH3144 / CPH3244
CPH3144 / CPH3244
Applications
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm).
High allowable power dissipation.
Specifications
( ) : CPH3144
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Mounted on a ceramic board
(600mm
2
!0.8mm)
Conditions
Ratings
(--30)40
(--)30
(--)5
(--)2
(--)5
(--)400
0.9
150
--55 to +150
Unit
V
V
V
A
A
mA
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=(--)30V, IE=0
VEB=(--)4V, IC=0
VCE=(--)2V, IC=(-
-)100mA
VCE=(--)10V, IC=(--)300mA
VCB=(--)10V, f=1MHz
200
(440)400
(17)12
Ratings
min
typ
max
(--)0.1
(--)0.1
560
MHz
pF
Unit
µA
µA
Marking : CPH3144 : BD, CPH3244 : DP
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2004EA TS IM TB-00000973 No.8165-1/4
CPH3144 / CPH3244
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=(--)1.5A, IB=(--)75mA
IC=(--)1.5A, IB=(--)75mA
IC=(--)10µA, IE=0
IC=(--)1mA, RBE=∞
IE=(-
-)10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--30)40
(--)30
(--)5
(45)40
(200)350
(23)30
Ratings
min
typ
(-
-170)160
(--)0.94
max
(--260)240
(--)1.2
Unit
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
2150A
2.9
0.4
3
Switching Time Test Circuit
PW=20µs
D.C.≤1%
0.2
0.15
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
+
470µF
VCC=12V
RB
0.6
INPUT
0.05
RL=24Ω
1
1.9
2
0.6
1.6
2.8
0.7
0.9
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
VBE= --5V
0.2
IC=20IB1= --20IB2=500mA
For PNP, the polarity is reversed.
--2.0
--1.8
IC -- VCE
CPH3144
--5
0m
A
mA
--20
40mA
A
m
mA
40
--30
--
2.0
IC -- VCE
mA
15
mA
20
10m
A
--15mA
--10mA
1.8
8mA
A
Collector Current, IC -- A
Collector Current, IC -- A
--1.4
1.4
1.2
1.0
0.8
--8mA
--1.2
50mA
30m
--1.6
1.6
6mA
4mA
--6mA
--1.0
--0.8
--0.6
--4mA
--2mA
2mA
0.6
0.4
0.2
--0.4
--0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
IB=0
--1.8
--2.0
0
0
CPH3244
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IB=0
1.8
2.0
IT08908
Collector-to-Emitter Voltage, VCE -- V
--2.00
--1.75
IT08907
2.00
1.75
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
CPH3144
VCE= --2V
Collector Current, IC -- A
IC -- VBE
CPH3244
VCE=2V
Collector Current, IC -- A
--1.50
--1.25
--1.00
1.50
1.25
1.00
C
25
°
C
C
--0.75
--0.50
--0.25
0
0
--0.2
--0.4
0.75
0.50
0.25
0
--0.6
--0.8
--1.0
IT08909
0
0.2
0.4
0.6
Ta=75
°
Ta=75
°
0.8
--25
°
C
--25
°
C
25
°
C
1.0
IT08910
Base-to-Emitter Voltage, VBE -- V
Base-to-Emitter Voltage, VBE -- V
No.8165-2/4
CPH3144 / CPH3244
1000
7
hFE -- IC
CPH3144
VCE= --2V
DC Current Gain, hFE
1000
7
hFE -- IC
CPH3244
VCE=2V
DC Current Gain, hFE
5
5
Ta=75
°
C
3
Ta=75°C
25
°
C
--25
°C
25
°C
3
--25
°C
2
2
100
7
--0.01
100
7
0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
2
3
5
7
0.1
2
3
5
7
1.0
2
3
Collector Current, IC -- A
1000
IT08911
1000
Collector Current, IC -- A
IT08912
f T -- IC
Gain-Bandwidth Product, f T -- MHz
CPH3144
VCE= --10V
f T -- IC
CPH3244
VCE=10V
Gain-Bandwidth Product, f T -- MHz
7
5
7
5
3
3
2
2
100
7
5
--0.01
100
7
5
0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
2
3
5
7
0.1
2
3
5
7
1.0
2
3
Collector Current, IC -- A
7
IT08913
7
5
Collector Current, IC -- A
IT08914
Cob -- VCB
Cob -- VCB
CPH3244
f=1MHz
CPH3144
f=1MHz
Output Capacitance, Cob -- pF
2
3
5 7 --1.0
2
3
5
7 --10
2
3
5
Output Capacitance, Cob -- pF
5
3
3
2
2
10
7
10
--0.1
5
0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
5
3
2
IT08915
5
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
IT08916
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
CPH3144
IC / IB=20
3
2
CPH3244
IC / IB=20
0.1
7
5
3
2
--0.1
7
5
3
2
=
Ta
7
C
5
°
C
5
°
--2
°
25
C
Ta
5
=7
°
C
°
C
25
5
°
C
--2
0.01
7
--0.01
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
Collector Current, IC -- A
IT08917
Collector Current, IC -- A
IT08918
No.8165-3/4
CPH3144 / CPH3244
3
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
CPH3144
IC / IB=20
3
VBE(sat) -- IC
CPH3244
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
2
--1.0
7
5
Ta= --25°C
1.0
7
5
Ta= --25°C
75
°
C
25
°C
75
°
C
25
°
C
3
3
2
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
2
0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
Collector Current, IC -- A
10
7
5
IT08919
1.0
ASO
Collector Current, IC -- A
IT08920
PC -- Ta
ICP=5A
<10µs
0.9
CPH3144 / CPH3244
0
µ
s
µ
s
50
1 00
s
Collector Dissipation, PC -- W
Collector Current, IC -- A
3
2
1.0
7
5
3
2
0.1
7
5
3
2
IC=2A
M
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1m
10
0m
ou
nt
ed
m
s
10
s
on
0.01
0.01
CPH3144 / CPH3244
Ta=25
°
C
Single pulse
For PNP minus sign is omitted
Mounted on a ceramic board (600mm
2
!0.8mm)
2 3
5 7 0.1
2
3
5 7 1.0
2 3
5 7 10
2 3
5
Collector-to-Emitter Voltage, VCE -- V
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2004. Specifications and information herein are subject
to change without notice.
PS No.8165-4/4
D
C
ac
er
op
at
er
a
m
ic
n
io
IT08921
bo
ar
d
(6
00
m
m
2
!
0.
8m
m
)
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT08922
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参数对比
与CPH3144相近的元器件有:CPH3244。描述及对比如下:
型号 CPH3144 CPH3244
描述 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
厂商名称 SANYO SANYO
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3
Reach Compliance Code unknow unknow
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 2 A 2 A
集电极-发射极最大电压 30 V 30 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 200 200
JESD-30 代码 R-PDSO-G3 R-PDSO-G3
元件数量 1 1
端子数量 3 3
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP NPN
最大功率耗散 (Abs) 0.9 W 0.9 W
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 440 MHz 400 MHz
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