Ordering number : EN8737
CPH3455
SANYO Semiconductors
DATA SHEET
CPH3455
Features
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ON-resistance RDS(on)1=80m
Ω
(typ.)
4V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)
2
Conditions
Ratings
35
±20
3
12
1
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7015A-004
2.9
0.6
3
0.2
0.15
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
0.05
Marking
LM
TL
0.6
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
Electrical Connection
3
0.9
0.2
1
2
http://semicon.sanyo.com/en/network
51811PE TKIM TC-00002566 No.8737-1/4
LOT No.
2.8
1.6
CPH3455
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.75A, VGS=4.5V
ID=0.75A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=20V, VGS=10V, ID=3A
VDS=20V, VGS=10V, ID=3A
VDS=20V, VGS=10V, ID=3A
IS=3A, VGS=0V
1.2
1.7
80
123
148
186
36
22
4.2
4.7
15
5.7
4
0.9
0.7
0.86
1.2
104
173
208
Ratings
min
35
1
±10
2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VDD=15V
10V
0V
VIN
ID=1.5A
RL=10Ω
VIN
G
D
VOUT
PW=10μs
D.C.≤1%
P.G
50Ω
S
CPH3455
V
3.0
ID -- VDS
8.0V
4.0
ID -- VGS
VDS=10V
4.5
4.0
V
16.0V
10.0V
6.0V
2.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Drain Current, ID -- A
2.0
1.5
0.5
Ta
=
0
0.5
1.0
1.5
2.0
2.5
75
°
C
0
25
3.0
3.5
°
C
--25
°
C
1.0
VGS=3.0V
Drain Current, ID -- A
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
4.0
4.5
Drain-to-Source Voltage, VDS -- V
IT16442
Gate-to-Source Voltage, VGS -- V
IT16443
No.8737-2/4
CPH3455
300
RDS(on) -- VGS
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
300
270
240
210
180
150
120
90
60
30
0
--60 --40
--20
0
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
270
240
210
180
150
120
90
60
30
0
0
2
4
6
8
10
12
14
16
18
ID=0.75A
1.5A
A
0.75
I D=
,
=4V
VGS
.75A
I D=0
V,
=4.5
VGS
=1.5A
10V, I D
V GS=
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
|
y
fs
|
-- ID
IT16444
10
7
5
3
2
1.0
7
5
Ambient Temperature, Ta --
°
C
IS -- VSD
IT16445
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
VDS=10V
VGS=0V
2
Ta=
75
°
C
7
5
3
2
0.1
0.01
Ta
C
75
°
°
C
25
0.1
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
100
7
SW Time -- ID
5 7 10
IT16446
0.01
0
0.2
0.4
0.6
--25
°
0.8
3
2
25
°
C
1.0
5
°
C
--2
=
Source Current, IS -- A
3
C
1.0
1.2
IT16447
Switching Time, SW Time -- ns
5
3
VDD=15V
VGS=10V
Ciss, Coss, Crss -- pF
1000
7
5
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
f=1MHz
ff)
10
7
5
3
2
1.0
0.1
td
(o
2
tf
Ciss
tr
100
7
5
3
2
10
td(on)
Coss
Crss
2
3
5
7
1.0
2
3
5
7
10
0
5
10
15
20
25
30
35
IT16449
Drain Current, ID -- A
10
9
VGS -- Qg
IT16448
100
7
5
3
2
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS=20V
ID=3A
Drain Current, ID -- A
8
7
6
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
IDP=12A (PW≤10μs)
ID=3A
10
0
1m
μ
s
10
s
DC
ms
10
op
0m
era
s
tio
n(
Ta
=2
Operation in this area
5
°
C)
is limited by RDS(on).
0.01
0.01
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm
2
×0.8mm)
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Total Gate Charge, Qg -- nC
IT16450
Drain-to-Source Voltage, VDS -- V
5 7 100
IT16451
No.8737-3/4
CPH3455
1.4
PD -- Ta
When mounted on ceramic substrate
(900mm
2
×0.8mm)
Allowable Power Dissipation, PD -- W
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT16452
Note on usage : Since the CPH3455 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
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applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
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are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
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party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of May, 2011. Specifications and information herein are subject
to change without notice.
PS No.8737-4/4
