Ordering number : ENN8220
CPH5831
CPH5831
Features
•
•
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
•
•
DC / DC converters.
Composite type with a N-Channel Silicon MOSFET (MCH3406) and a Schottky Barrier Diode (SBS010M) contained
in one package facilitating high-density mounting.
[MOS]
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
1.8V drive.
[SBD]
•
Short reverse recovery time.
•
Low forward voltage.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
15
15
2
10
--55 to +125
--55 to +125
V
V
A
A
°C
°C
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm
!0.8mm)
1unit
2
Symbol
Conditions
Ratings
20
±10
3
12
0.9
150
--55 to +125
Unit
V
V
A
A
W
°C
°C
Marking : XH
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM
12805PE TS IM TB-100797 No.8220-1/6
CPH5831
Electrical Characteristics
at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
VR
VF 1
VF 2
IR
C
trr
Rth(j-a)
IR=1.5mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm
2
!0.8mm)
15
0.27
0.30
65
15
138
0.32
0.35
600
V
V
V
µA
pF
ns
°C
/ W
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=
±8V,
VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=3A
VDS=10V, VGS=4V, ID=3A
VDS=10V, VGS=4V, ID=3A
IS=3A, VGS=0
0.4
3.36
5.6
48
58
72
280
60
38
13
35
35
25
8.8
0.85
0.85
0.82
1.2
63
82
110
20
1
±10
1.3
V
µA
µA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Conditions
Ratings
min
typ
max
Unit
Package Dimensions
unit : mm
2171
2.9
5
4
3
0.6
Electrical Connection
5
0.2
4
3
0.15
0.6
1.6
2.8
0.05
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
1
2
Top view
1
0.95
2
0.4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
0.2
0.4
0.7
0.9
No.8220-2/6
CPH5831
Switching Time Test Circuit
[MOSFET]
VIN
4V
0V
VIN
ID=1.5A
RL=6.67Ω
VOUT
50Ω
10µs
--5V
100Ω
10Ω
trr Test Circuit
[SBD]
VDD=10V
Duty≤10%
100mA
D
PW=10µs
D.C.≤1%
G
100mA
trr
CPH5831
P.G
50Ω
S
3.0
ID -- VDS
10.0V
4.0V
2.5
V
1.8V
1.5
V
[MOSFET]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
ID -- VGS
VDS=10V
2.5
Drain Current, ID -- A
2.0
1.5
VGS=1.0V
Drain Current, ID -- A
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
160
Drain-to-Source Voltage, VDS -- V
IT03490
RDS(on) -- VGS
[MOSFET]
Ta=25°C
140
IT03491
Gate-to-Source Voltage, VGS -- V
[MOSFET]
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
140
120
100
80
60
40
20
0
0
2
4
6
8
10
IT03492
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
100
1.0A
1.5A
ID=0.5A
80
60
V
=1.8
, VGS
0.5A
V
I D=
=2.5
A, VGS
.0
4.0V
I D=1
S=
.5A, V G
I D=1
40
20
0
--60
--40
--20
0
20
40
Ta=
7
5
°
C
1.0
60
25
°
C
--25
°
C
80
100
120
10mA
[MOSFET]
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
°C
IT03493
No.8220-3/6
CPH5831
3
y
fs -- ID
VDS=10V
[MOSFET]
Forward Transfer Admittance,
y
fs -- S
2
10
7
5
3
2
1.0
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
IF -- VSD
[MOSFET]
VGS=0
25
°
C
Ta
-25
=-
°
C
C
75
°
Forward Current, IF -- A
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
3
2
5 7 10
IT03494
0.01
0.2
0.3
0.4
0.5
Ta=
7
5
°
C
25
°
C
--25
°
C
0.6
0.7
0.8
0.9
1.0
1.1
1.2
SW Time -- ID
[MOSFET]
VDD=10V
VGS=4V
Ciss, Coss, Crss -- pF
1000
7
5
3
2
Ciss, Coss, Crss -- VDS
[MOSFET]
f=1MHz
Diode Forward Voltage, VSD -- V
IT03495
Switching Time, SW Time -- ns
100
7
5
3
2
10
7
5
3
2
1.0
0.1
2
td(off)
tr
Ciss
tf
td(on)
100
7
5
3
Coss
Crss
10
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
7
8
10
IT03496
3
2
10
7
5
7
0
2
4
6
8
10
12
14
16
18
20
VGS -- Qg
[MOSFET]
Drain-to-Source Voltage, VDS -- V
IT03497
[MOSFET]
ASO
Gate-to-Source Voltage, VGS -- V
VDS=10V
ID=3A
Drain Current, ID -- A
IDP=12A
ID=3A
<10µs
1m
10
m
s
100µs
3
2
1.0
7
5
3
2
0.1
7
5
3
2
DC
10
s
op
0m
s
er
ati
on
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm
2
!0.8mm)
1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7
9
10
0.01
0.01
Total Gate Charge, Qg -- nC
1.0
IT03498
PD -- Ta
M
ou
nt
Drain-to-Source Voltage, VDS -- V
IT09179
[MOSFET]
Allowable Power Dissipation, PD -- W
0.9
0.8
ed
on
0.6
ac
er
a
m
ic
bo
ar
d
(6
0.4
00
m
m
2
!
0.
8m
0.2
m
)1
un
it
160
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta --
°C
IT09178
No.8220-4/6
CPH5831
10
7
5
IF -- VF
[SBD]
Forward Current, IF -- mA
Reverse Current, IR -- A
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
7
5
3
2
IR -- VR
[SBD]
00
°
C
Ta=1
75
°
C
50
°
C
25
°
C
10
0
°
C
0.1
7
5
3
2
0.01
0
50
°
C
25
°
C
75
°
C
Ta
=
12
5
°
C
0.0001
7
5
3
2
0
2
4
0.00001
0.1
0.2
0.3
0.4
0.5
IT05881
6
8
10
12
14
16
Forward Voltage, VF -- V
Reverse Voltage, VR -- V
1000
7
5
IT05904
Average Forward Power Dissipation, PF(AV) -- W
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
PF(AV) -- IO
(1)
[SBD]
C -- VR
[SBD]
f=1MHz
(2) (4) (3)
Interterminal Capacitance, C -- pF
Rectangular
wave
θ
360°
3
2
100
7
5
3
2
10
7
5
3
2
1.0
1.0
2
3
5
7
2
IT00625
Sine
wave
180°
360°
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
1.0
1.5
2.0
2.5
3.0
IT08545
10
Average Forward Current, IO -- A
12
IFSM -- t
IS
Reverse Voltage, VR -- V
[SBD]
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
10
8
20ms
t
6
4
2
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Time, t -- s
IT00626
No.8220-5/6
