MITSUBISHI IGBT
MITSUBISHI IGBT
CY25AAJ-8F
CY25AAJ-8F
Nch IGBT STROBE FLASHER
Nch IGBT for for STROBE FLASHER
CY25AAJ-8F
OUTLINE DRAWING
Dimensions in mm
6.0
4.4
5.0
1.8 MAX.
0.4
1.27
EMITTER
GATE
COLLECTOR
q
V
CES ...............................................................................
400V
q
I
CM ...................................................................................
150A
q
Drive voltage
.....................................................................
4V
SOP-8
APPLICATION
Strobe Flasher for camera
MAXIMUM RATINGS
Symbol
V
CES
V
GES
V
GEM
I
CM
T
j
T
stg
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
V
GE
= 0V
V
CE
= 0V
Conditions
Ratings
400
±6
±8
150
–40 ~ +150
–40 ~ +150
Unit
V
V
V
A
°C
°C
Sep. 2000
V
CE
= 0V, tw = 10s
C
M
= 400µF see figure1
MITSUBISHI IGBT
CY25AAJ-8F
Nch IGBT for STROBE FLASHER
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Tj = 25°C)
Test conditions
I
C
= 1mA, V
GE
= 0V
I
G
=
±100µA,
V
CE
= 0V
V
CE
= 400V, V
GE
= 0V
V
GE
=
±6V,
V
CE
= 0V
V
CE
= 10V, I
C
= 1mA
Limits
Min.
450
±8
—
—
—
Typ.
—
—
—
—
—
Max.
—
—
10
±10
1.5
Unit
V
V
µA
µA
V
V
(BR) CES
Collector-emitter breakdown voltage
V
(BR) GES
Gate-emitter breakdown voltage
I
CES
I
GES
V
GE (th)
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Figure1. MAXIMUM PULSE COLLECTOR CURRENT
PULSE COLLECTOR CURRENT I
CM
(A)
200
150
C
M
= 400µF
00
50
0
0
2
4
6
8
GATE-EMITTER VOLTAGE V
GE
(V)
APPLICATION EXAMPLE
TRIGGER
SIGNAL
Vtrig
IXe
C
M
+
IGBTE GATE V
G
VOLTAGE
Vtrig
–
V
CM
R
G
V
CE
V
G
IGBT
Xe TUBE
CURRENT
I
XE
Sep. 2000
