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CY7C1474BV33-167BGC

1MX72 ZBT SRAM, 3.4ns, PBGA209, 14 X 22 MM, 1.76 MM HEIGHT, FBGA-209

器件类别:存储    存储   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
零件包装代码
BGA
包装说明
14 X 22 MM, 1.76 MM HEIGHT, FBGA-209
针数
209
Reach Compliance Code
unknown
最长访问时间
3.4 ns
其他特性
PIPELINED ARCHITECTURE
JESD-30 代码
R-PBGA-B209
长度
22 mm
内存密度
75497472 bit
内存集成电路类型
ZBT SRAM
内存宽度
72
功能数量
1
端子数量
209
字数
1048576 words
字数代码
1000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX72
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY
并行/串行
PARALLEL
认证状态
COMMERCIAL
座面最大高度
1.96 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3.135 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
温度等级
COMMERCIAL
端子面层
NOT SPECIFIED
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
宽度
14 mm
Base Number Matches
1
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CY7C1470BV33
CY7C1472BV33, CY7C1474BV33
72 Mbit (2M x 36/4M x 18/1M x 72) Pipelined
SRAM with NoBL™ Architecture
Features
Functional Description
The CY7C1470BV33, CY7C1472BV33, and CY7C1474BV33
are 3.3V, 2M x 36/4M x 18/1M x 72 Synchronous pipelined burst
SRAMs with No Bus Latency™ (NoBL logic, respectively.
They are designed to support unlimited true back-to-back read
or write operations with no wait states. The CY7C1470BV33,
CY7C1472BV33, and CY7C1474BV33 are equipped with the
advanced (NoBL) logic required to enable consecutive read or
write operations with data being transferred on every clock cycle.
This feature dramatically improves the throughput of data in
systems that require frequent read or write transitions. The
CY7C1470BV33, CY7C1472BV33, and CY7C1474BV33 are pin
compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the Clock Enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle.
Write operations are controlled by the Byte Write Selects
for
CY7C1470BV33,
BW
a
–BW
b
for
(BW
a
–BW
d
CY7C1472BV33, and BW
a
–BW
h
for CY7C1474BV33) and a
Write Enable (WE) input. All writes are conducted with on-chip
synchronous self timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
Pin-compatible and functionally equivalent to ZBT™
Supports 250 MHz bus operations with zero wait states
Available speed grades are 250, 200, and 167 MHz
Internally self timed output buffer control to eliminate the need
to use asynchronous OE
Fully registered (inputs and outputs) for pipelined operation
Byte Write capability
Single 3.3V power supply
3.3V/2.5V IO power supply
Fast clock-to-output time
3.0 ns (for 250 MHz device)
Clock Enable (CEN) pin to suspend operation
Synchronous self timed writes
CY7C1470BV33, CY7C1472BV33 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-ball FBGA package. CY7C1474BV33
available in Pb-free and non-Pb-free 209-ball FBGA package
IEEE 1149.1 JTAG Boundary Scan compatible
Burst capability—linear or interleaved burst order
“ZZ” Sleep Mode option and Stop Clock option
Selection Guide
Description
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
250 MHz
3.0
500
120
200 MHz
3.0
500
120
167 MHz
3.4
450
120
Unit
ns
mA
mA
Cypress Semiconductor Corporation
Document #: 001-15031 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 01, 2010
[+] Feedback
CY7C1470BV33
CY7C1472BV33, CY7C1474BV33
Logic Block Diagram – CY7C1470BV33 (2M x 36)
A0, A1, A
MODE
CLK
CEN
ADDRESS
REGISTER 0
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
ADV/LD
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
C
ADV/LD
BW
a
BW
b
BW
c
BW
d
WE
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
E
DQ s
DQ P
a
DQ P
b
DQ P
c
DQ P
d
E
INPUT
REGISTER 1
E
INPUT
REGISTER 0
E
OE
CE1
CE2
CE3
ZZ
READ LOGIC
SLEEP
CONTROL
Logic Block Diagram – CY7C1472BV33 (4M x 18)
A0, A1, A
MODE
CLK
CEN
ADDRESS
REGISTER 0
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
ADV/LD
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
C
ADV/LD
BW
a
BW
b
WE
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
DQ s
DQ P
a
DQ P
b
E
E
INPUT
REGISTER 1
E
INPUT
REGISTER 0
E
OE
CE1
CE2
CE3
ZZ
READ LOGIC
Sleep
Control
Document #: 001-15031 Rev. *E
Page 2 of 31
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CY7C1470BV33
CY7C1472BV33, CY7C1474BV33
Logic Block Diagram – CY7C1474BV33 (1M x 72)
A0, A1, A
MODE
CLK
CEN
C
WRITE ADDRESS
REGISTER 1
ADDRESS
REGISTER 0
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
ADV/LD
C
WRITE ADDRESS
REGISTER 2
ADV/LD
BW
a
BW
b
BW
c
BW
d
BW
e
BW
f
BW
g
BW
h
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
E
E
DQ s
DQ P
a
DQ P
b
DQ P
c
DQ P
d
DQ P
e
DQ P
f
DQ P
g
DQ P
h
WE
INPUT
REGISTER 1
E
INPUT
REGISTER 0
E
OE
CE1
CE2
CE3
ZZ
READ LOGIC
Sleep
Control
Document #: 001-15031 Rev. *E
Page 3 of 31
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CY7C1470BV33
CY7C1472BV33, CY7C1474BV33
Pin Configurations
Figure 1. 100-Pin TQFP Pinout
A
A
CE
1
CE
2
BWd
BWc
BWb
BWa
CE
3
V
DD
V
SS
CLK
WE
CEN
OE
ADV/LD
A
A
A
A
CE
1
CE
2
NC
NC
BWb
BWa
CE
3
V
DD
V
SS
CLK
WE
CEN
OE
ADV/LD
A
A
NC
DQPb
NC
DQb
NC
DQb
V
DDQ
V
DDQ
V
SS
V
SS
NC
DQb
DQb
NC
DQb
DQb
DQb
DQb
V
SS
V
SS
V
DDQ
V
DDQ
DQb
DQb
DQb
DQb
NC
V
SS
V
DD
NC
NC
V
DD
V
SS
ZZ
DQb
DQa
DQa
DQb
V
DDQ
V
DDQ
V
SS
V
SS
DQa
DQb
DQa
DQb
DQa DQPb
NC
DQa
V
SS
V
SS
V
DDQ
V
DDQ
NC
DQa
DQa
NC
DQPa
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
A
A
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
DQPc
DQc
DQc
V
DDQ
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DDQ
DQc
DQc
NC
V
DD
NC
V
SS
DQd
DQd
V
DDQ
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DDQ
DQd
DQd
DQPd
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
NC
NC
V
DDQ
V
SS
NC
DQPa
DQa
DQa
V
SS
V
DDQ
DQa
DQa
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DDQ
V
SS
DQa
DQa
NC
NC
V
SS
V
DDQ
NC
NC
NC
CY7C1470BV33
(2M x 36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
CY7C1472BV33
(4M x 18)
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
MODE
A
A
A
A
A
1
A
0
MODE
A
A
A
A
A
1
A
0
V
SS
V
DD
A
A
A
A
A
A
A
A
A
NC(288)
NC(144)
NC(288)
NC(144)
Document #: 001-15031 Rev. *E
V
SS
V
DD
A
A
A
A
A
A
A
A
A
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
Page 4 of 31
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参数对比
与CY7C1474BV33-167BGC相近的元器件有:CY7C1470BV33-200BZC、CY7C1474BV33-200BGC、CY7C1472BV33-200BZC。描述及对比如下:
型号 CY7C1474BV33-167BGC CY7C1470BV33-200BZC CY7C1474BV33-200BGC CY7C1472BV33-200BZC
描述 1MX72 ZBT SRAM, 3.4ns, PBGA209, 14 X 22 MM, 1.76 MM HEIGHT, FBGA-209 2MX36 ZBT SRAM, 3ns, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 1MX72 ZBT SRAM, 3ns, PBGA209, 14 X 22 MM, 1.76 MM HEIGHT, FBGA-209 4MX18 ZBT SRAM, 3ns, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
零件包装代码 BGA BGA BGA BGA
包装说明 14 X 22 MM, 1.76 MM HEIGHT, FBGA-209 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 14 X 22 MM, 1.76 MM HEIGHT, FBGA-209 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
针数 209 165 209 165
Reach Compliance Code unknown unknown unknown unknown
最长访问时间 3.4 ns 3 ns 3 ns 3 ns
其他特性 PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
JESD-30 代码 R-PBGA-B209 R-PBGA-B165 R-PBGA-B209 R-PBGA-B165
长度 22 mm 17 mm 22 mm 17 mm
内存密度 75497472 bit 75497472 bit 75497472 bit 75497472 bit
内存集成电路类型 ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
内存宽度 72 36 72 18
功能数量 1 1 1 1
端子数量 209 165 209 165
字数 1048576 words 2097152 words 1048576 words 4194304 words
字数代码 1000000 2000000 1000000 4000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C
组织 1MX72 2MX36 1MX72 4MX18
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 BGA LBGA BGA LBGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY GRID ARRAY, LOW PROFILE GRID ARRAY GRID ARRAY, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
座面最大高度 1.96 mm 1.4 mm 1.96 mm 1.4 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 BALL BALL BALL BALL
端子节距 1 mm 1 mm 1 mm 1 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM
宽度 14 mm 15 mm 14 mm 15 mm
厂商名称 - Rochester Electronics Rochester Electronics Rochester Electronics
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器件捷径:
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