UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
超高频波段, 硅, N沟道, 射频功率, 场效应管
厂商名称:SEME-LAB
厂商官网:http://www.semelab.co.uk
下载文档型号 | D1211UK | D1211 | D2019 | D2019UK | D2020UK |
---|---|---|---|---|---|
描述 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
最小击穿电压 | 40 V | 40 V | 40 V | 40 V | 40 V |
端子数量 | 8 | 8 | 8 | 8 | 8 |
加工封装描述 | ROHS COMPLIANT, SOP-8 | ROHS COMPLIANT, SOP-8 | ROHS COMPLIANT, SOP-8 | ROHS COMPLIANT, SOP-8 | ROHS COMPLIANT, SOP-8 |
欧盟RoHS规范 | Yes | Yes | Yes | Yes | Yes |
状态 | Active | Active | Active | Active | Active |
壳体连接 | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE |
结构 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
drain_current_max__abs___id_ | 10 A | 10 A | 10 A | 10 A | 10 A |
最大漏电流 | 10 A | 10 A | 10 A | 10 A | 10 A |
场效应晶体管技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
jesd_30_code | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
moisture_sensitivity_level | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
元件数量 | 1 | 1 | 1 | 1 | 1 |
操作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最大工作温度 | 200 Cel | 200 Cel | 200 Cel | 200 Cel | 200 Cel |
包装材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
包装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
包装尺寸 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
eak_reflow_temperature__cel_ | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
larity_channel_type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
wer_dissipation_max__abs_ | 30 W | 30 W | 30 W | 30 W | 30 W |
qualification_status | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
sub_category | FET General Purpose Powe | FET General Purpose Powe | FET General Purpose Powe | FET General Purpose Powe | FET General Purpose Powe |
表面贴装 | YES | YES | YES | YES | YES |
端子涂层 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
ime_peak_reflow_temperature_max__s_ | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
dditional_feature | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |