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D44H11AS

10A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
是否Rohs认证
不符合
零件包装代码
TO-220AB
包装说明
PLASTIC, TO-220AB, 3 PIN
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
外壳连接
COLLECTOR
最大集电极电流 (IC)
10 A
集电极-发射极最大电压
80 V
配置
SINGLE
最小直流电流增益 (hFE)
40
JESD-30 代码
R-PSFM-T3
JESD-609代码
e0
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子面层
TIN LEAD
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
50 MHz
Base Number Matches
1
文档预览
D44H Series (NPN),
D45H Series (PNP)
Complementary Silicon
Power Transistors
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
Features
http://onsemi.com
Low Collector−Emitter Saturation Voltage
Fast Switching Speeds
Complementary Pairs Simplifies Designs
These Devices are Pb−Free and are RoHS Compliant*
10 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS 60, 80 VOLTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
D44H8, D45H8
D44H11, D45H11
Emitter Base Voltage
Collector Current
Continuous
Collector Current
Peak (Note 1)
Total Power Dissipation
@ T
C
= 25°C
@ T
A
= 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
Value
60
80
5.0
10
20
70
2.0
−55
to +150
°C
1
Vdc
Adc
Adc
W
Unit
Vdc
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
V
EB
I
C
I
CM
P
D
MARKING
DIAGRAM
T
J
, T
stg
TO−220AB
CASE 221A−09
STYLE 1
2
3
D4xHyyG
AYWW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Width
v
6.0 ms, Duty Cycle
v
50%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
1.8
62.5
275
Unit
°C/W
°C/W
°C
D4xHyy = Device Code
x = 4 or 5
yy = 8 or 11
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
D44H8G
D44H11G
D45H8G
D45H11G
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
D44H/D
©
Semiconductor Components Industries, LLC, 2013
September, 2013
Rev. 12
1
D44H Series (NPN),
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 30 mAdc, I
B
= 0 Adc)
Collector Cutoff Current (V
CE
= Rated V
CEO
, V
BE
= 0)
Emitter Cutoff Current (V
EB
= 5.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 1.0 Vdc, I
C
= 2.0 Adc)
(V
CE
= 1.0 Vdc, I
C
= 4.0 Adc)
Collector−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.4 Adc)
Base−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance
(V
CB
= 10 Vdc, f
test
= 1.0 MHz)
Gain Bandwidth Product
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 20 MHz)
SWITCHING TIMES
Delay and Rise Times
(I
C
= 5.0 Adc, I
B1
= 0.5 Adc)
Storage Time
(I
C
= 5.0 Adc, I
B1
= I
B2
= 0.5 Adc)
Fall Time
(I
C
= 5.0 Adc, I
B1
= 102 = 0.5 Adc)
D44H Series
D45H Series
D44H Series
D45H Series
D44H Series
D45H Series
t
d
+ t
r
t
s
t
f
140
100
500
500
ns
300
135
ns
ns
D44H Series
D45H Series
D44H Series
D45H Series
C
cb
f
T
50
40
pF
90
160
MHz
h
FE
60
40
V
BE(sat)
Vdc
1.0
1.5
Vdc
D44H8, D45H8
D44H11, D45H11
V
CEO(sus)
I
CES
I
EBO
60
80
10
10
Vdc
mA
mA
Symbol
Min
Typ
Max
Unit
V
CE(sat)
http://onsemi.com
2
D44H Series (NPN),
1000
V
CE
= 1 V
h
FE
, DC CURRENT GAIN
125°C
−40°C
100
h
FE
, DC CURRENT GAIN
25°C
1000
V
CE
= 1 V
125°C
25°C
100
−40°C
10
0.01
0.1
1
10
10
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 1. D44H11 DC Current Gain
Figure 2. D45H11 DC Current Gain
1000
V
CE
= 5 V
h
FE
, DC CURRENT GAIN
125°C
25°C
1000
V
CE
= 5 V
h
FE
, DC CURRENT GAIN
125°C
25°C
100
−40°C
100
−40°C
10
0.01
0.1
1
10
10
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 3. D44H11 DC Current Gain
Figure 4. D45H11 DC Current Gain
0.40
SATURATION VOLTAGE (VOLTS)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.1
SATURATION VOLTAGE (VOLTS)
V
CE(sat)
@ I
C
/I
B
= 10
0.6
V
CE(sat)
@ I
C
/I
B
= 10
0.5
0.4
0.3
0.2
0.1
0
−40°C
−40°C
25°C
125°C
25°C
125°C
1
I
C
, COLLECTOR CURRENT (AMPS)
10
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 5. D44H11 ON−Voltage
Figure 6. D45H11 ON−Voltage
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3
D44H Series (NPN),
1.2
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
1.0
0.8
0.6
25°C
0.4
0.2
0
−40°C
1.4
1.2
1.0
0.8
0.6
25°C
0.4
0.2
0
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
125°C
V
BE(sat)
@ I
C
/I
B
= 10
−40°C
125°C
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 7. D44H11 ON−Voltage
Figure 8. D45H11 ON−Voltage
I
C
, COLLECTOR CURRENT (AMPS)
100
50
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
1.0
D44H/45H8
D44H/45H10,11
2.0 3.0 5.0 7.0 10
20 30
50 70 100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
P
D
, POWER DISSIPATION (WATTS)
T
A
T
C
1.0 ms
100
ms
10
ms
3.0 60
2.0 40
T
C
1.0 20
T
A
T
C
70° C
dc
DUTY CYCLE
50%
1.0
ms
0
0
0
20
40
60
80
100
120
T, TEMPERATURE (°C)
140
160
Figure 9. Maximum Rated Forward Bias
Safe Operating Area
Figure 10. Power Derating
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01 0.02
Z
qJC(t)
= r(t) R
qJC
R
qJC
= 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC(t)
0.2
0.5
1.0
2.0
5.0
10
20
50
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200
500 1.0 k
SINGLE PULSE
0.05
0.1
t, TIME (ms)
Figure 11. Thermal Response
http://onsemi.com
4
D44H Series (NPN),
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
−T−
B
4
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
F
T
C
S
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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