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DB3

36 V, DIAC, DO-35

器件类别:配件   

厂商名称:CDIL

厂商官网:http://www.cdilsemi.com

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器件参数
参数名称
属性值
端子数量
2
最大击穿电压
36 V
最小击穿电压
28 V
加工封装描述
HERMETIC SEALED, DO-35G, 2 PIN
状态
DISCONTINUED
包装形状
包装尺寸
LONG FORM
端子形式
线
端子涂层
锡 铅
端子位置
AXIAL
包装材料
UNSPECIFIED
结构
单一的
壳体连接
隔离
元件数量
1
触发装置类型
DIAC
文档预览
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON DIAC
BIDIRECTIONAL TRIGGER DIODES
GLASS PASSIVATED PNPN DEVICE
DB3, DB4
DO- 35
Glass Axial Package
Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be
used in Conjunction with Triacs for Simplified Gate Control Circuits or as a Starting
Element in Fluorescent Lamp Ballasts
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC unless specified otherwise))
DESCRIPTION
SYMBOL
o
P
tot
Power Dissipation on Printed Circuit (L=10mm) (T
a
=50 C)
Repetitive Peak on-State Current (t
p
=20µs, f=100Hz)
µ
Storage Temperature Range
Junction Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
Junction to Leads
R
th (j-a)
R
th (j-l)
400
150
ºC/W
ºC/W
I
TRM
T
stg
T
j
VALUE
150
2
- 40 to +125
- 40 to +110
UNIT
mW
A
ºC
ºC
ELECTRICAL CHARACTERISTICS (T
j
=25ºC unless specified otherwise)
DESCRIPTION
* Breakover Voltage
SYMBOL
V
BO
TEST CONDITIONS
MIN
** C = 22nF
see diagram 1
DB3
28
DB4
35
** C = 22nF
see diagram 1
∆1=[I
BO
to I
F
=10mA]
5
see diagram 1
see diagram 2
5
** C = 22nF
see diagram 3
TYP 1.5
V
B
= 0.5 V
BO
max
see diagram 1
MAX
UNIT
Breakover Voltage Symmetry
* Dynamic Breakover Voltage
* Output Voltage
* Breakover Current
* Rise Time
* Leakage Current
[I+V
BO
I-I-V
BO
I]
I∆V+ I
V
O
I
BO
t
r
I
B
36
45
+3
V
V
V
V
V
µA
µs
µA
50
10
* Electrical characteristic applicable in both forward and reverse directions
** Connected in parallel with the devices.
DB3_DB4Rev_1 190402E
Continental Device India Limited
Data Sheet
Page 1 of 4
DB3/DB4
DIAGRAM 1
:Current-voltage characteristics
+ I
F
Power dissipation versus ambient temperature
(maximum values)
160
140
120
10mA
P (mW)
V
-
I
BO
I
B
0.5 V
BO
V
100
80
60
40
20
+
V
V
BO
0
0
10
20
30
40
50
60
70
80
90
100
110
120
Tamb ( C)
o
- I
F
Relative variation of V
BO
versus junction temperature
(typical values)
1.1
VBO(Tj=25 C)
DIAGRAM 2
:Test circuit for output voltage
VBO(Tj)
220V
50 HZ
1.08
1.06
1.04
1.02
1
25
50
75
Tj (
o
C)
100
10k
~
500k
0.1uF
D.U.T
V
O
R=20 ohm
O
DIAGRAM 3 :
Test circuit see diagram 2.
Adjust R for Ip=0.5A
Peak pulse current versus pulse duration (maximum
value)
10
I
TRM
(A)
90 %
Ip
1
0.1
0.01
F=100 H
Z
Tj intial = 25
O
C
10%
t
r
10
100
tp (us)
1000
10000
DB3_DB4Rev_1 190402E
Continental Device India Limited
Data Sheet
Page 2 of 4
DB3, DB4
DO- 35
Glass Axial Package
DO-35 Glass Axial Package
A
B
A
DIM
MIN
MAX
A
25.40
B
3.05 4.15
C
0.46 0.56
D
1.70 2.29
All dimensions are in mm.
C
NOTE:
Cathode is marked by Band.
D
DO-35, 52mm Taping Specification
1.05 MAX.
1.5 R MAX.
5.50
4.50
52 mm Taping Specification
1.
2.
3.
4.
5.
T & A indicates Axial Tape and Ammo
Packing (52 mm Tape Spacing).
300 mm (min) leader tape on every tape.
No. of empty places allowed 0.25%
without consecutive empty places.
Ends of leads shall preferably not
protrude beyond the tapes.
Components shall be held sufficiently in
the tape or tapes so that they
can not come free in normal handling.
CENTRE LINE
± 1.05
54.00
6.0
52.0
48.0
11 DIODES
5.0
50.00
All dimensions are in mm.
LEADER
6 . 0
± 1. 0
52
±2.
.0
0
DIODE AMMO PACK
TAPES
FE
ED
6.0
±1.0
±2.0
83.0
LABEL
.0
±2
.0
255
DO-35:- 5000 pcs./Ammo Pack
On request also available
in 26 mm Tape
80.
±2.0
0
Packing Detail
PACKAGE
Details
DO-35 T&A
5K/
ammo box
STANDARD PACK
Net Weight/
Qty
0.88 kg/ pcs
5K
Size
10" x 3.2" x 3.2"
INNER CARTON BOX
Qty
5K
Size
OUTER CARTON BOX
Qty
125K
Gr Wt
25 kgs
12.7" x 12.7" x 20"
DB3_DB4Rev_1 190402E
Continental Device India Limited
Data Sheet
Page 2 of 3
DB3, DB4
DO- 35
Component Disposal Instructions
1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to please dispose
as per prevailing Environmental Legislation of their Country.
2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical and Electronic Equipment (WEEE).
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in
your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the
Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and on the CDIL Web Site/CD
are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information.
Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey
any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or
systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end
products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any
damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150,
4141
1112 Fax + 91-11-2579 5290,
4141
1119
email@cdil.com
www.cdilsemi.com
DB3_DB4Rev_1 190402E
Continental Device India Limited
Data Sheet
Page
3
of
3
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参数对比
与DB3相近的元器件有:DB4。描述及对比如下:
型号 DB3 DB4
描述 36 V, DIAC, DO-35 DIAC
状态 DISCONTINUED ACTIVE
触发装置类型 DIAC DIAC
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