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DDA114TH-7

Bipolar Transistors - Pre-Biased 150MW 10K

器件类别:分立半导体    晶体管   

厂商名称:Diodes Incorporated

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Diodes Incorporated
包装说明
GREEN, PLASTIC PACKAGE-6
针数
6
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
19 weeks
其他特性
BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
100
JESD-30 代码
R-PDSO-F6
JESD-609代码
e3
湿度敏感等级
1
元件数量
2
端子数量
6
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
PNP
最大功率耗散 (Abs)
0.15 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
文档预览
DDA (xxxx) H
PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Types Available (DDC)
Built-In Biasing Resistors
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
P/N
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA143TH
DDA114TH
R1 (NOM)
22kΩ
47kΩ
4.7kΩ
10kΩ
2.2kΩ
10kΩ
4.7kΩ
10kΩ
R2 (NOM)
22kΩ
47kΩ
4.7kΩ
47kΩ
47kΩ
10kΩ
DDA114TH
Mechanical Data
Case: SOT563
Case Material: Molded Plastic UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.005 grams (Approximate)
SCHEMATIC DIAGRAM, TOP VIEW
6
5
4
6
5
R
1
R
1
4
R
1
R
2
R
2
R
1
1
2
3
1
2
3
R
1
, R
2
Device Schematic
R
1
Only
Device Schematic
Ordering Information
(Note 4)
Product
DDA124EH-7
DDA144EH-7
DDA143EH-7
DDA114YH-7
DDA123JH-7
DDA114EH-7
DDA143TH-7
DDA114TH-7
Notes:
Compliance
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
Marking
P17
P20
P08
P14
P06
P13
P07
P12
Reel Size (inches)
7
7
7
7
7
7
7
7
Tape Width (mm)
8
8
8
8
8
8
8
8
Quantity per Reel
3,000
3,000
3,000
3,000
3,000
3,000
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT563
PXX = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: C = 2015
M = Month ex: 9 = September
PXXYM
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb
2
Mar
3
2017
E
Apr
4
2018
F
May
5
2019
G
Jun
6
2020
H
Jul
7
2021
I
Aug
8
Sep
9
2022
J
Oct
O
2023
K
Nov
N
2024
L
Dec
D
June 2016
© Diodes Incorporated
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
1 of 6
www.diodes.com
DDA (xxxx) H
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Supply Voltage
Input Voltage
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA143TH
DDA114TH
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA143TH
DDA114TH
All
(Note 5)
Symbol
V
CC
Value
-50
+10 to -40
+10 to -40
+10 to -30
+6 to -40
+5 to -12
+10 to -40
+5V Max
+5V Max
-30
-30
-100
-70
-100
-50
-100
-100
-100
150
833
-55 to +150
Unit
V
V
IN
V
Output Current
I
O
mA
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Note:
I
C
(Max)
P
D
R
θJA
T
J
, T
STG
mA
mW
°C/W
°C
5. Mounted on FR4 Board with recommended pad layout at http://www.diodes.com/package-outlines.html.
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
2 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DDA (xxxx) H
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Min
-50
-50
-5
100
Typ
250
250
Max
-0.5
-0.5
-0.3
600
Unit
V
V
V
µA
µA
V
MHz
I
C
= -50µA
I
C
= -1mA
I
E
= -50µA
V
CB
= -50V
V
EB
= -4V
I
C
/I
B
= -2.5mA / -0.25mA
I
C
/I
B
= -1mA / -0.1mA
I
C
= -1mA, V
CE
= -5V
V
CE
= -10V, I
E
= 5mA, f = 100MHz
DDA143TH
DDA114TH
Test Condition
Characteristic (DDA143TH & DDA114TH only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
Characteristic
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
Symbol
Min
-0.5
-0.5
-0.5
-0.3
-0.5
-0.5
Typ
-1.1
-1.1
-1.1


-1.1
-1.9
-1.9
-1.9


1.9
Max
Unit
Test Condition
V
L(OFF)
V
V
CC
= -5V, I
O
= -100µA
Input Voltage
V
L(ON)
-3.0
-3.0
-3.0
-1.4
-1.1
-3.0
Output Voltage
V
O(ON)
-0.1
-0.3
V
V
O
= -0.3V, I
O
= -5mA
V
O
= -0.3V, I
O
= -2mA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -1mA
V
O
= -0.3V, I
O
= -5mA
V
O
= -0.3V, I
O
= -10mA
I
O
/I
L
= -10mA / -0.5mA
I
O
/I
L
= -10mA / -0.5mA
I
O
/I
L
= -10mA / -0.5mA
I
O
/I
L
= -5mA / -0.25mA
I
O
/I
L
= -5mA / -0.25mA
I
O
/I
L
= -10mA / -0.5mA
Input Current
I
L
-0.36
-0.18
-1.8
-0.88
-3.6
-0.88
-0.5
mA
V
I
= -5V
Output Current
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
I
O(OFF)
56
68
20
68
80
30
µA
V
CC
= -50V, V
I
= -0V
DC Current Gain
G
L
Gain-Bandwidth Product*
* Transistor - For Reference Only
f
T
250
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -5mA
MHz V
CE
= -10V, I
E
= -5mA, f = 100MHz
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
3 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DDA (xxxx) H
Typical Curves - DDA143EH
250
1
V
CE(SAT)
, COLLECTOR EMITTER VOLTAGE (V)
I
C
/I
B
= 10
P
d
, POWER DISSIPATION (mW)
200
75°C
0.1
-25°C
25°C
150
100
0.01
50
0
-50
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
150
0.001
0
10
40
20
30
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 V
CE(SAT)
vs. I
C
50
1,000
12
f = 1MHz
10
h
FE
, DC CURRENT GAIN
C
OB
, CAPACITANCE (pF)
100
8
6
10
4
2
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
100
0
0
10
15
25
5
20
V
R
, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
30
100
75°C
10
V
O
= 0.2V
I
C
, COLLECTOR CURRENT (mA)
1
V
in
, INPUT VOLTAGE (V)
0
1
6
7
8
9
4
5
V
in
, INPUT VOLTAGE (V)
Fig. 5 Collector Current vs. Input Voltage
2
3
10
10
1
0.1
0.01
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
50
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
4 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DDA (xxxx) H
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT563
A
B
C
D
G
K
M
SOT563
Dim Min
Max Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
-
-
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
H
L
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT563
C2
C2
Z
G
C1
Y
X
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
1.7
C1
0.5
C2
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
5 of 6
www.diodes.com
June 2016
© Diodes Incorporated
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参数对比
与DDA114TH-7相近的元器件有:DDA124EH-7。描述及对比如下:
型号 DDA114TH-7 DDA124EH-7
描述 Bipolar Transistors - Pre-Biased 150MW 10K Bipolar Transistors - Pre-Biased 150MW 22K
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
厂商名称 Diodes Incorporated Diodes Incorporated
包装说明 GREEN, PLASTIC PACKAGE-6 GREEN, PLASTIC PACKAGE-6
针数 6 6
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
Factory Lead Time 19 weeks 19 weeks
其他特性 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO 1
最大集电极电流 (IC) 0.1 A 0.03 A
集电极-发射极最大电压 50 V 50 V
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 100 56
JESD-30 代码 R-PDSO-F6 R-PDSO-F6
JESD-609代码 e3 e3
湿度敏感等级 1 1
元件数量 2 2
端子数量 6 6
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260
极性/信道类型 PNP PNP
最大功率耗散 (Abs) 0.15 W 0.15 W
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子面层 Matte Tin (Sn) Matte Tin (Sn)
端子形式 FLAT FLAT
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 40 40
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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